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5961-01-137-1454
20 Products
T4120D
TRANSISTOR
NSN, MFG P/N
5961011371454
NSN
5961-01-137-1454
MFG
INTERSIL CORPORATION
Description
TRANSISTOR
Related Searches:
0041737921
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011371455
NSN
5961-01-137-1455
0041737921
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011371455
NSN
5961-01-137-1455
MFG
ASCOM DEUTSCHLAND GMBH
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -50.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.600 INCHES NOMINAL
OVERALL WIDTH: 0.600 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
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VJ447
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011371455
NSN
5961-01-137-1455
VJ447
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011371455
NSN
5961-01-137-1455
MFG
L-3 COMMUNICATIONS CORPORATION DBA L 3 COMMUNICATIONS CORPORATION EOS DIVISION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -50.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.600 INCHES NOMINAL
OVERALL WIDTH: 0.600 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
VYA100X
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011371456
NSN
5961-01-137-1456
MFG
L-3 COMMUNICATIONS CORPORATION DBA L 3 COMMUNICATIONS CORPORATION EOS DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
MBR330M
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011371457
NSN
5961-01-137-1457
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N5941
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011371458
NSN
5961-01-137-1458
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 8.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.094 INCHES NOMINAL
OVERALL LENGTH: 0.182 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 47.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
Related Searches:
310-015941-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011371458
NSN
5961-01-137-1458
310-015941-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011371458
NSN
5961-01-137-1458
MFG
IMPATH NETWORKS INC
Description
CURRENT RATING PER CHARACTERISTIC: 8.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.094 INCHES NOMINAL
OVERALL LENGTH: 0.182 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 47.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
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2N6156
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011371459
NSN
5961-01-137-1459
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N78
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011371460
NSN
5961-01-137-1460
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
99002006
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011371460
NSN
5961-01-137-1460
MFG
THALES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
MB001472
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011371460
NSN
5961-01-137-1460
MFG
2 MB DISTRIBUTION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
B4009434-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011372306
NSN
5961-01-137-2306
B4009434-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011372306
NSN
5961-01-137-2306
MFG
DEPARTMENT OF THE ARMY HQ UNITED STATES ARMY COMMUNICATIONS RESEARCH AND DEVELOPMENT COMMAND
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SPT 9434-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011372306
NSN
5961-01-137-2306
SPT 9434-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011372306
NSN
5961-01-137-2306
MFG
SOLID STATE DEVICES INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
0N278183
TRANSISTOR
NSN, MFG P/N
5961011372363
NSN
5961-01-137-2363
MFG
NATIONAL SECURITY AGENCY
Description
TRANSISTOR
Related Searches:
35MB40A
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011372412
NSN
5961-01-137-2412
35MB40A
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011372412
NSN
5961-01-137-2412
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: S6458-4
MANUFACTURERS CODE: 51589
MATERIAL: SILICON
SPECIAL FEATURES: GROUNDED TERMINAL NOT INCLUDED
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE
THE MANUFACTURERS DATA:
Related Searches:
S6458-4
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011372412
NSN
5961-01-137-2412
S6458-4
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011372412
NSN
5961-01-137-2412
MFG
ST-SEMICON INC
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: S6458-4
MANUFACTURERS CODE: 51589
MATERIAL: SILICON
SPECIAL FEATURES: GROUNDED TERMINAL NOT INCLUDED
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE
THE MANUFACTURERS DATA:
Related Searches:
3718012-2
TRANSISTOR
NSN, MFG P/N
5961011373859
NSN
5961-01-137-3859
MFG
L-3 COMMUNICATIONS CORPORATION DBA COMMUNICATION SYSTEMS - EAST DIVISION
Description
TRANSISTOR
Related Searches:
1712861-1
TRANSISTOR
NSN, MFG P/N
5961011373860
NSN
5961-01-137-3860
MFG
L-3 COMMUNICATIONS CORPORATION DBA COMMUNICATION SYSTEMS - EAST DIVISION
Description
TRANSISTOR
Related Searches:
10904
TRANSISTOR
NSN, MFG P/N
5961011373862
NSN
5961-01-137-3862
MFG
HARRIS CORPORATION DIV MICROWAVE COMMUNICATION DIVISION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
OVERALL WIDTH: 0.105 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 310.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
2N5484
TRANSISTOR
NSN, MFG P/N
5961011373862
NSN
5961-01-137-3862
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
OVERALL WIDTH: 0.105 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 310.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM GATE TO SOURCE VOLTAGE
