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5961-00-168-1631
20 Products
930C567-5
TRANSISTOR
NSN, MFG P/N
5961001681631
NSN
5961-00-168-1631
MFG
BAE SYSTEMS CONTROLS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, WITH SPECIFIED RESISTANCE BETWEEN BASE AND EMITTER
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.138 INCHES
OVERALL DIAMETER: 0.440 INCHES MINIMUM AND 0.460 INCHES MAXIMUM
OVERALL LENGTH: 0.195 INCHES MINIMUM AND 0.215 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 89954-930C567 DRAWING
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
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2N679
TRANSISTOR
NSN, MFG P/N
5961001677665
NSN
5961-00-167-7665
MFG
ELECTRONIC TRANSISTORS CORP
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.375 INCHES MAXIMUM
OVERALL LENGTH: 0.320 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
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A2350
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001677671
NSN
5961-00-167-7671
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
SEMICONDUCTOR DEVICE,DIODE
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W41292F6200K4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001677671
NSN
5961-00-167-7671
W41292F6200K4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001677671
NSN
5961-00-167-7671
MFG
EADS DEUTSCHLAND GMBH DEFENCE ELECTR ONICS ABTEILUNG VELB6
Description
SEMICONDUCTOR DEVICE,DIODE
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618436-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001677682
NSN
5961-00-167-7682
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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618572-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001677683
NSN
5961-00-167-7683
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.0469 INCHES NOMINAL
OVERALL LENGTH: 0.156 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.0625 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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UM9046
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001677683
NSN
5961-00-167-7683
MFG
MICRO USPD INC
Description
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.0469 INCHES NOMINAL
OVERALL LENGTH: 0.156 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.0625 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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11253174-2
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001677687
NSN
5961-00-167-7687
11253174-2
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001677687
NSN
5961-00-167-7687
MFG
BALLISTIC MISSILE DEFENSE SYSTEMS COMMAND
Description
ACCOMMODATED ITEM SECURING DEVICE TYPE: FRICTION FASTENER
MATERIAL: COPPER ALLOY
MATERIAL DOCUMENT AND CLASSIFICATION: QQ-B-626,COMP 1 FED SPEC SINGLE MATERIAL RESPONSE
MOUNTING FACILITY TYPE AND QUANTITY: 1 THREADED HOLE SINGLE MOUNTING FACILITY
NOMINAL THREAD SIZE: 0.112 INCHES SINGLE MOUNTING FACILITY
OVERALL HEIGHT: 0.170 INCHES NOMINAL
OVERALL LENGTH: 0.500 INCHES NOMINAL
OVERALL WIDTH: 0.219 INCHES NOMINAL
STYLE DESIGNATOR: 12C IRREGULAR
SURFACE TREATMENT: CADMIUM
SURFACE TREATMENT DOCUMENT AND CLASSIFICATION: QQ-P-416,TY 2,CL A FED SPEC SINGLE TREATMENT RESPONSE
THREAD CLASS: 2B SINGLE MOUNTING FACILITY
THREAD SERIES DESIGNATOR: UNC SINGLE MOUNTING FACILITY
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TX1807B
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001677687
NSN
5961-00-167-7687
TX1807B
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001677687
NSN
5961-00-167-7687
MFG
CTS ELECTRONIC COMPONENTS CALIFORNIA INC DBA IERC DIV CTS ELECTRONIC COMPONENTS
Description
ACCOMMODATED ITEM SECURING DEVICE TYPE: FRICTION FASTENER
MATERIAL: COPPER ALLOY
MATERIAL DOCUMENT AND CLASSIFICATION: QQ-B-626,COMP 1 FED SPEC SINGLE MATERIAL RESPONSE
MOUNTING FACILITY TYPE AND QUANTITY: 1 THREADED HOLE SINGLE MOUNTING FACILITY
NOMINAL THREAD SIZE: 0.112 INCHES SINGLE MOUNTING FACILITY
OVERALL HEIGHT: 0.170 INCHES NOMINAL
OVERALL LENGTH: 0.500 INCHES NOMINAL
OVERALL WIDTH: 0.219 INCHES NOMINAL
STYLE DESIGNATOR: 12C IRREGULAR
SURFACE TREATMENT: CADMIUM
SURFACE TREATMENT DOCUMENT AND CLASSIFICATION: QQ-P-416,TY 2,CL A FED SPEC SINGLE TREATMENT RESPONSE
THREAD CLASS: 2B SINGLE MOUNTING FACILITY
THREAD SERIES DESIGNATOR: UNC SINGLE MOUNTING FACILITY
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13213E4113
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961001677946
NSN
5961-00-167-7946
13213E4113
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961001677946
NSN
5961-00-167-7946
MFG
CECOM LR CENTER
Description
MAJOR COMPONENTS: DIODE 3; HEAT SINK 1; PLATE 1; TERMINAL BOARD 1
SPECIAL FEATURES: HARDWARE INCLUDED
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24127-1
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001677953
NSN
5961-00-167-7953
24127-1
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001677953
NSN
5961-00-167-7953
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
RETAINER,SEMICONDUCTOR DEVICE
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24127-2
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001677954
NSN
5961-00-167-7954
24127-2
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001677954
NSN
5961-00-167-7954
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
RETAINER,SEMICONDUCTOR DEVICE
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507523-6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001677997
NSN
5961-00-167-7997
MFG
RAYTHEON COMPANY
Description
DESIGN CONTROL REFERENCE: 507523-6
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 96214
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.018 INCHES MINIMUM AND 0.022 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM BASE SUPPLY VOLTAGE
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386MT093P002
TRANSISTOR
NSN, MFG P/N
5961001681522
NSN
5961-00-168-1522
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N1722
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-53
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/262
OVERALL HEIGHT: 0.675 INCHES MINIMUM AND 0.775 INCHES MAXIMUM
OVERALL LENGTH: 0.850 INCHES MINIMUM AND 0.870 INCHES MAXIMUM
OVERALL WIDTH: 0.850 INCHES MINIMUM AND 0.870 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN
Related Searches:
JAN2N1722
TRANSISTOR
NSN, MFG P/N
5961001681522
NSN
5961-00-168-1522
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N1722
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-53
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/262
OVERALL HEIGHT: 0.675 INCHES MINIMUM AND 0.775 INCHES MAXIMUM
OVERALL LENGTH: 0.850 INCHES MINIMUM AND 0.870 INCHES MAXIMUM
OVERALL WIDTH: 0.850 INCHES MINIMUM AND 0.870 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN
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L02746
TRANSISTOR
NSN, MFG P/N
5961001681522
NSN
5961-00-168-1522
MFG
DLA LAND AND MARITIME
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N1722
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-53
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/262
OVERALL HEIGHT: 0.675 INCHES MINIMUM AND 0.775 INCHES MAXIMUM
OVERALL LENGTH: 0.850 INCHES MINIMUM AND 0.870 INCHES MAXIMUM
OVERALL WIDTH: 0.850 INCHES MINIMUM AND 0.870 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN
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24238
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961001681524
NSN
5961-00-168-1524
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
RETAINER,SEMICONDUCTOR DEVICE
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4JD7A35
TRANSISTOR
NSN, MFG P/N
5961001681605
NSN
5961-00-168-1605
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
DESIGN CONTROL REFERENCE: 4JD7A35
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 03508
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN
THE MANUFACTURERS DATA:
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9-04718
TRANSISTOR
NSN, MFG P/N
5961001681605
NSN
5961-00-168-1605
MFG
LCT ELECTRONICS
Description
DESIGN CONTROL REFERENCE: 4JD7A35
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 03508
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN
THE MANUFACTURERS DATA:
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1N2156
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001681626
NSN
5961-00-168-1626
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
