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5961-00-162-9773
20 Products
05D00007
TRANSISTOR
NSN, MFG P/N
5961001629773
NSN
5961-00-162-9773
MFG
DYNAMICS CORP OF AMERICA WARING PRODUCTS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.188 INCHES NOMINAL
OVERALL HEIGHT: 0.165 INCHES NOMINAL
OVERALL LENGTH: 0.165 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.095 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 10.0 MAXIMUM EMITTER TO BASE VOL
Related Searches:
928182-1B
TRANSISTOR
NSN, MFG P/N
5961001629686
NSN
5961-00-162-9686
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM EMITTER CURRENT, DC AND 10.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.110 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 10.0 MAXIMUM EMIT
Related Searches:
CI186A
TRANSISTOR
NSN, MFG P/N
5961001629686
NSN
5961-00-162-9686
MFG
CRYSTALONICS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM EMITTER CURRENT, DC AND 10.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.110 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 10.0 MAXIMUM EMIT
Related Searches:
ST70035
TRANSISTOR
NSN, MFG P/N
5961001629686
NSN
5961-00-162-9686
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM EMITTER CURRENT, DC AND 10.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.110 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 10.0 MAXIMUM EMIT
Related Searches:
1853-0276
TRANSISTOR
NSN, MFG P/N
5961001629698
NSN
5961-00-162-9698
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: SPRUANCE CLASS DD (963), VIRGINIA CLASS CGN (41), TICONDEROGA CLASS CG (47), LOS ANGELES CLASS SSN (688), STURGEON CLASS SSN (637); ENGINE, AIRCRAFT TF39-GE-1 (C-5A); ENGINE, AIRCRAFT, F100-PW-200 (F-16A/B/C/D/), LANDING CRAFTAIR CUSHION (LCAC)
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL LENGTH: 0.132 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QU
Related Searches:
90327-002
TRANSISTOR
NSN, MFG P/N
5961001629698
NSN
5961-00-162-9698
MFG
CALCOMP INC
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: SPRUANCE CLASS DD (963), VIRGINIA CLASS CGN (41), TICONDEROGA CLASS CG (47), LOS ANGELES CLASS SSN (688), STURGEON CLASS SSN (637); ENGINE, AIRCRAFT TF39-GE-1 (C-5A); ENGINE, AIRCRAFT, F100-PW-200 (F-16A/B/C/D/), LANDING CRAFTAIR CUSHION (LCAC)
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL LENGTH: 0.132 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QU
Related Searches:
MM3906
TRANSISTOR
NSN, MFG P/N
5961001629698
NSN
5961-00-162-9698
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: SPRUANCE CLASS DD (963), VIRGINIA CLASS CGN (41), TICONDEROGA CLASS CG (47), LOS ANGELES CLASS SSN (688), STURGEON CLASS SSN (637); ENGINE, AIRCRAFT TF39-GE-1 (C-5A); ENGINE, AIRCRAFT, F100-PW-200 (F-16A/B/C/D/), LANDING CRAFTAIR CUSHION (LCAC)
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL LENGTH: 0.132 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QU
Related Searches:
1-015-1158
TRANSISTOR
NSN, MFG P/N
5961001629773
NSN
5961-00-162-9773
MFG
DOTRONIX INC BOULDER OPN
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.188 INCHES NOMINAL
OVERALL HEIGHT: 0.165 INCHES NOMINAL
OVERALL LENGTH: 0.165 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.095 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 10.0 MAXIMUM EMITTER TO BASE VOL
Related Searches:
1-958117-002
TRANSISTOR
NSN, MFG P/N
5961001629773
NSN
5961-00-162-9773
MFG
EATON CORP ELECTRONIC INSTRUMENTATION DIV LOS ANGELES PLANT
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.188 INCHES NOMINAL
OVERALL HEIGHT: 0.165 INCHES NOMINAL
OVERALL LENGTH: 0.165 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.095 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 10.0 MAXIMUM EMITTER TO BASE VOL
Related Searches:
100443-001
TRANSISTOR
NSN, MFG P/N
5961001629773
NSN
5961-00-162-9773
MFG
GARNER INDUSTRIES INC DBA NEBRASKA MOLD
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.188 INCHES NOMINAL
OVERALL HEIGHT: 0.165 INCHES NOMINAL
OVERALL LENGTH: 0.165 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.095 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 10.0 MAXIMUM EMITTER TO BASE VOL
Related Searches:
101000094
TRANSISTOR
NSN, MFG P/N
5961001629773
NSN
5961-00-162-9773
MFG
DATA GENERAL CORP M/S 9S17
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.188 INCHES NOMINAL
OVERALL HEIGHT: 0.165 INCHES NOMINAL
OVERALL LENGTH: 0.165 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.095 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 10.0 MAXIMUM EMITTER TO BASE VOL
Related Searches:
106616
TRANSISTOR
NSN, MFG P/N
5961001629773
NSN
5961-00-162-9773
MFG
SYSTRON-DONNER CORP MICROWAVE/INSTRUMENT DIV
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.188 INCHES NOMINAL
OVERALL HEIGHT: 0.165 INCHES NOMINAL
OVERALL LENGTH: 0.165 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.095 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 10.0 MAXIMUM EMITTER TO BASE VOL
Related Searches:
12074-0007
TRANSISTOR
NSN, MFG P/N
5961001629773
NSN
5961-00-162-9773
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.188 INCHES NOMINAL
OVERALL HEIGHT: 0.165 INCHES NOMINAL
OVERALL LENGTH: 0.165 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.095 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 10.0 MAXIMUM EMITTER TO BASE VOL
Related Searches:
13221E8560
TRANSISTOR
NSN, MFG P/N
5961001629773
NSN
5961-00-162-9773
MFG
CECOM LR CENTER
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.188 INCHES NOMINAL
OVERALL HEIGHT: 0.165 INCHES NOMINAL
OVERALL LENGTH: 0.165 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.095 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 10.0 MAXIMUM EMITTER TO BASE VOL
Related Searches:
3-30216
TRANSISTOR
NSN, MFG P/N
5961001629773
NSN
5961-00-162-9773
MFG
CALIFORNIA INSTRUMENTS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.188 INCHES NOMINAL
OVERALL HEIGHT: 0.165 INCHES NOMINAL
OVERALL LENGTH: 0.165 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.095 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 10.0 MAXIMUM EMITTER TO BASE VOL
Related Searches:
330-01300
TRANSISTOR
NSN, MFG P/N
5961001629773
NSN
5961-00-162-9773
MFG
BOUNDLESS TECHNOLOGIES INC
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.188 INCHES NOMINAL
OVERALL HEIGHT: 0.165 INCHES NOMINAL
OVERALL LENGTH: 0.165 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.095 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 10.0 MAXIMUM EMITTER TO BASE VOL
Related Searches:
400 00049 00
TRANSISTOR
NSN, MFG P/N
5961001629773
NSN
5961-00-162-9773
MFG
RYCOM INSTRUMENTS
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.188 INCHES NOMINAL
OVERALL HEIGHT: 0.165 INCHES NOMINAL
OVERALL LENGTH: 0.165 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.095 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 10.0 MAXIMUM EMITTER TO BASE VOL
Related Searches:
417/4/01918/002
TRANSISTOR
NSN, MFG P/N
5961001629773
NSN
5961-00-162-9773
MFG
SELEX GALILEO LTD
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.188 INCHES NOMINAL
OVERALL HEIGHT: 0.165 INCHES NOMINAL
OVERALL LENGTH: 0.165 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.095 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 10.0 MAXIMUM EMITTER TO BASE VOL
Related Searches:
4807-0000-003
TRANSISTOR
NSN, MFG P/N
5961001629773
NSN
5961-00-162-9773
MFG
AEROFLEX WICHITA INC.
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.188 INCHES NOMINAL
OVERALL HEIGHT: 0.165 INCHES NOMINAL
OVERALL LENGTH: 0.165 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.095 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 10.0 MAXIMUM EMITTER TO BASE VOL
Related Searches:
7040037-1
TRANSISTOR
NSN, MFG P/N
5961001629773
NSN
5961-00-162-9773
MFG
ELECTRODYNAMICS INC. DBA L-3 COMMUNICATIONS ELECTRODYNAMICS
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.188 INCHES NOMINAL
OVERALL HEIGHT: 0.165 INCHES NOMINAL
OVERALL LENGTH: 0.165 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.095 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 10.0 MAXIMUM EMITTER TO BASE VOL
