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5961-00-105-0639

20 Products

1820846

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001050639

NSN

5961-00-105-0639

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1820846

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961001050639

NSN

5961-00-105-0639

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: GLASS OR PLASTIC OR CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

100401

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961001050982

NSN

5961-00-105-0982

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100401

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961001050982

NSN

5961-00-105-0982

MFG

KONTRON AG

Description

COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: VIRGINIA CLASS CGN (41); SPRUANCE CLASS DD (963); LOS ANGELES CLASS SSN (688); WASP CLASS LHD; OLIVER PERRY CLASS FFG; EMORY S. LAND CLASS AS; NIMITZ CLASS CVN; STURGEON CLASS SSN (637); IWO JIMA CLASS LPH
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-99
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 550.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; TRANSISTORS JUNCTION PATTERN ARRANGEMENT IS NPN
TERMINA

1400108-28

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961001050982

NSN

5961-00-105-0982

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1400108-28

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961001050982

NSN

5961-00-105-0982

MFG

RAYTHEON TECHNICAL SERVICES COMPANY

Description

COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: VIRGINIA CLASS CGN (41); SPRUANCE CLASS DD (963); LOS ANGELES CLASS SSN (688); WASP CLASS LHD; OLIVER PERRY CLASS FFG; EMORY S. LAND CLASS AS; NIMITZ CLASS CVN; STURGEON CLASS SSN (637); IWO JIMA CLASS LPH
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-99
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 550.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; TRANSISTORS JUNCTION PATTERN ARRANGEMENT IS NPN
TERMINA

1854-0280

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961001050982

NSN

5961-00-105-0982

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1854-0280

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961001050982

NSN

5961-00-105-0982

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: VIRGINIA CLASS CGN (41); SPRUANCE CLASS DD (963); LOS ANGELES CLASS SSN (688); WASP CLASS LHD; OLIVER PERRY CLASS FFG; EMORY S. LAND CLASS AS; NIMITZ CLASS CVN; STURGEON CLASS SSN (637); IWO JIMA CLASS LPH
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-99
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 550.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; TRANSISTORS JUNCTION PATTERN ARRANGEMENT IS NPN
TERMINA

3000-667

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961001050982

NSN

5961-00-105-0982

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3000-667

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961001050982

NSN

5961-00-105-0982

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: VIRGINIA CLASS CGN (41); SPRUANCE CLASS DD (963); LOS ANGELES CLASS SSN (688); WASP CLASS LHD; OLIVER PERRY CLASS FFG; EMORY S. LAND CLASS AS; NIMITZ CLASS CVN; STURGEON CLASS SSN (637); IWO JIMA CLASS LPH
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-99
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 550.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; TRANSISTORS JUNCTION PATTERN ARRANGEMENT IS NPN
TERMINA

7610011P003

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961001050982

NSN

5961-00-105-0982

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7610011P003

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961001050982

NSN

5961-00-105-0982

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: VIRGINIA CLASS CGN (41); SPRUANCE CLASS DD (963); LOS ANGELES CLASS SSN (688); WASP CLASS LHD; OLIVER PERRY CLASS FFG; EMORY S. LAND CLASS AS; NIMITZ CLASS CVN; STURGEON CLASS SSN (637); IWO JIMA CLASS LPH
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-99
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 550.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; TRANSISTORS JUNCTION PATTERN ARRANGEMENT IS NPN
TERMINA

A1854-0280PS

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961001050982

NSN

5961-00-105-0982

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A1854-0280PS

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961001050982

NSN

5961-00-105-0982

MFG

HEWLETT PACKARD CO

Description

COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: VIRGINIA CLASS CGN (41); SPRUANCE CLASS DD (963); LOS ANGELES CLASS SSN (688); WASP CLASS LHD; OLIVER PERRY CLASS FFG; EMORY S. LAND CLASS AS; NIMITZ CLASS CVN; STURGEON CLASS SSN (637); IWO JIMA CLASS LPH
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-99
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 550.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; TRANSISTORS JUNCTION PATTERN ARRANGEMENT IS NPN
TERMINA

MD918

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961001050982

NSN

5961-00-105-0982

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MD918

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961001050982

NSN

5961-00-105-0982

MFG

FREESCALE SEMICONDUCTOR INC.

Description

COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: VIRGINIA CLASS CGN (41); SPRUANCE CLASS DD (963); LOS ANGELES CLASS SSN (688); WASP CLASS LHD; OLIVER PERRY CLASS FFG; EMORY S. LAND CLASS AS; NIMITZ CLASS CVN; STURGEON CLASS SSN (637); IWO JIMA CLASS LPH
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-99
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 550.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; TRANSISTORS JUNCTION PATTERN ARRANGEMENT IS NPN
TERMINA

500-VMH-1004-1

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961001051171

NSN

5961-00-105-1171

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500-VMH-1004-1

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961001051171

NSN

5961-00-105-1171

MFG

VOLT-AGE ELECTRONICS INC

Description

DESIGN CONTROL REFERENCE: 579153-1
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: PLATE SILVER
MANUFACTURERS CODE: 96214
OUTPUT TERMINAL TYPE: SOLDER LUG
OVERALL DIAMETER: 0.380 INCHES NOMINAL
OVERALL LENGTH: 0.750 INCHES NOMINAL
THE MANUFACTURERS DATA:

579153-1

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961001051171

NSN

5961-00-105-1171

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579153-1

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961001051171

NSN

5961-00-105-1171

MFG

RAYTHEON COMPANY

Description

DESIGN CONTROL REFERENCE: 579153-1
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: PLATE SILVER
MANUFACTURERS CODE: 96214
OUTPUT TERMINAL TYPE: SOLDER LUG
OVERALL DIAMETER: 0.380 INCHES NOMINAL
OVERALL LENGTH: 0.750 INCHES NOMINAL
THE MANUFACTURERS DATA:

SI-9623

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961001051171

NSN

5961-00-105-1171

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SI-9623

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961001051171

NSN

5961-00-105-1171

MFG

SHILOH INDUSTRIES INC .

Description

DESIGN CONTROL REFERENCE: 579153-1
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: PLATE SILVER
MANUFACTURERS CODE: 96214
OUTPUT TERMINAL TYPE: SOLDER LUG
OVERALL DIAMETER: 0.380 INCHES NOMINAL
OVERALL LENGTH: 0.750 INCHES NOMINAL
THE MANUFACTURERS DATA:

MDA942-4

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961001051483

NSN

5961-00-105-1483

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MDA942-4

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961001051483

NSN

5961-00-105-1483

MFG

FREESCALE SEMICONDUCTOR INC.

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.285 INCHES MAXIMUM
OVERALL LENGTH: 0.565 INCHES MAXIMUM
OVERALL WIDTH: 0.565 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD

Q 317 811 004

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961001051483

NSN

5961-00-105-1483

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Q 317 811 004

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961001051483

NSN

5961-00-105-1483

MFG

RHEINMETALL SOLDIER ELECTRONICS GMBH

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.285 INCHES MAXIMUM
OVERALL LENGTH: 0.565 INCHES MAXIMUM
OVERALL WIDTH: 0.565 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD

Q317811004

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961001051483

NSN

5961-00-105-1483

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Q317811004

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961001051483

NSN

5961-00-105-1483

MFG

RHEINMETALL AIR DEFENCE AG

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.285 INCHES MAXIMUM
OVERALL LENGTH: 0.565 INCHES MAXIMUM
OVERALL WIDTH: 0.565 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD

6083589

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961001051486

NSN

5961-00-105-1486

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6083589

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961001051486

NSN

5961-00-105-1486

MFG

LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS

Description

COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MINIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEAD SURFACES GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.050 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
OVERALL WIDTH: 0.154 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.150 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 PIN
TRANSFER RATIO: 400.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 5.0 MINIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR_!!

SS7646

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961001051486

NSN

5961-00-105-1486

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SS7646

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961001051486

NSN

5961-00-105-1486

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MINIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEAD SURFACES GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.050 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
OVERALL WIDTH: 0.154 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.150 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 PIN
TRANSFER RATIO: 400.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 5.0 MINIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR_!!

6083590

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961001051487

NSN

5961-00-105-1487

View More Info

6083590

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961001051487

NSN

5961-00-105-1487

MFG

LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS

Description

COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
III PRECIOUS MATERIAL: GOLD
MANUFACTURERS CODE: 03640
MFR SOURCE CONTROLLING REFERENCE: 6083590
OVERALL HEIGHT: 0.050 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
OVERALL WIDTH: 0.154 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP

SA2675

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961001051487

NSN

5961-00-105-1487

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SA2675

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961001051487

NSN

5961-00-105-1487

MFG

FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ

Description

COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
III PRECIOUS MATERIAL: GOLD
MANUFACTURERS CODE: 03640
MFR SOURCE CONTROLLING REFERENCE: 6083590
OVERALL HEIGHT: 0.050 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
OVERALL WIDTH: 0.154 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP

SD753

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961001051487

NSN

5961-00-105-1487

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SD753

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961001051487

NSN

5961-00-105-1487

MFG

FREESCALE SEMICONDUCTOR INC.

Description

COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
III PRECIOUS MATERIAL: GOLD
MANUFACTURERS CODE: 03640
MFR SOURCE CONTROLLING REFERENCE: 6083590
OVERALL HEIGHT: 0.050 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
OVERALL WIDTH: 0.154 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP

SS7647

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961001051487

NSN

5961-00-105-1487

View More Info

SS7647

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961001051487

NSN

5961-00-105-1487

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
III PRECIOUS MATERIAL: GOLD
MANUFACTURERS CODE: 03640
MFR SOURCE CONTROLLING REFERENCE: 6083590
OVERALL HEIGHT: 0.050 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
OVERALL WIDTH: 0.154 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP