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5961-01-085-6295
20 Products
151-0307-00
TRANSISTOR
NSN, MFG P/N
5961010856295
NSN
5961-01-085-6295
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
TRANSISTOR
Related Searches:
D100622-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010854002
NSN
5961-01-085-4002
D100622-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010854002
NSN
5961-01-085-4002
MFG
SCI SYSTEMS INC
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5811
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/477
OVERALL DIAMETER: 0.115 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
DI0-079
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010854002
NSN
5961-01-085-4002
MFG
BAE SYSTEMS
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5811
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/477
OVERALL DIAMETER: 0.115 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
JANAN5811
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010854002
NSN
5961-01-085-4002
MFG
AMOCO CONTAINER CO
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5811
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/477
OVERALL DIAMETER: 0.115 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
SC/A4/43469
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010854002
NSN
5961-01-085-4002
SC/A4/43469
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010854002
NSN
5961-01-085-4002
MFG
RAYTHEON SYSTEMS LTD
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5811
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/477
OVERALL DIAMETER: 0.115 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
DMA6499BMR
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010854435
NSN
5961-01-085-4435
DMA6499BMR
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010854435
NSN
5961-01-085-4435
MFG
PARAMETRIC INDUSTRIES INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
67-449-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010854617
NSN
5961-01-085-4617
67-449-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010854617
NSN
5961-01-085-4617
MFG
ASTEC AMERICA INC .
Description
III END ITEM IDENTIFICATION: AN/GPN-22(V)
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
P6KE15
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010854617
NSN
5961-01-085-4617
MFG
GENERAL SEMICONDUCTOR INDUSTRIES INC
Description
III END ITEM IDENTIFICATION: AN/GPN-22(V)
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
V131799
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010854617
NSN
5961-01-085-4617
MFG
BARCO N.V. BARCOVIEW
Description
III END ITEM IDENTIFICATION: AN/GPN-22(V)
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
581R886H02
TRANSISTOR
NSN, MFG P/N
5961010854981
NSN
5961-01-085-4981
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 0.10 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
DESIGN CONTROL REFERENCE: 581R886H02
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: F-16A&B USAF
MANUFACTURERS CODE: 97942
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.109 INCHES MAXIMUM
OVERALL HEIGHT: 0.044 INCHES MINIMUM AND 0.052 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
Related Searches:
NE41603 C
TRANSISTOR
NSN, MFG P/N
5961010854981
NSN
5961-01-085-4981
MFG
CALIFORNIA EASTERN LABS
Description
CURRENT RATING PER CHARACTERISTIC: 0.10 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
DESIGN CONTROL REFERENCE: 581R886H02
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: F-16A&B USAF
MANUFACTURERS CODE: 97942
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.109 INCHES MAXIMUM
OVERALL HEIGHT: 0.044 INCHES MINIMUM AND 0.052 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
Related Searches:
007-06108-0000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010854982
NSN
5961-01-085-4982
007-06108-0000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010854982
NSN
5961-01-085-4982
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-OLATHE
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
DESIGN CONTROL REFERENCE: 007-06108-0000
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 22373
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.125 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL BASE SUPPLY VOLTAGE
Related Searches:
MA47475
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010854982
NSN
5961-01-085-4982
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
DESIGN CONTROL REFERENCE: 007-06108-0000
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 22373
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.125 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL BASE SUPPLY VOLTAGE
Related Searches:
JAN1N4130
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010854983
NSN
5961-01-085-4983
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 340.00 MILLIAMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4130
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/435
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500/435 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 68.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
00000580-445
TRANSISTOR
NSN, MFG P/N
5961010855607
NSN
5961-01-085-5607
MFG
AMPEX SYSTEMS CORP
Description
TRANSISTOR
Related Searches:
1782406-049
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010855888
NSN
5961-01-085-5888
1782406-049
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010855888
NSN
5961-01-085-5888
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
Related Searches:
1N2387A4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010855888
NSN
5961-01-085-5888
MFG
MICROSEMI CORP-COLORADO
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
Related Searches:
1N2387AR
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010855888
NSN
5961-01-085-5888
MFG
GENERAL SEMICONDUCTOR INDUSTRIES INC
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
Related Searches:
414-00151-006
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010855888
NSN
5961-01-085-5888
414-00151-006
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010855888
NSN
5961-01-085-5888
MFG
SAGEM DEFENSE SECURITE - GROUPE SAFR AN
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
Related Searches:
SA1937
TRANSISTOR
NSN, MFG P/N
5961010856295
NSN
5961-01-085-6295
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
TRANSISTOR
