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5961-01-029-0144
20 Products
4824-0020-001
TRANSISTOR
NSN, MFG P/N
5961010290144
NSN
5961-01-029-0144
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV ES DEFENSIVE SYSTEMS DIVISION
Description
TRANSISTOR
Related Searches:
149101-01
TRANSISTOR
NSN, MFG P/N
5961010290213
NSN
5961-01-029-0213
MFG
GE AVIATION SYSTEMS LLC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM BASE CURRENT, DC AND 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 35351
MFR SOURCE CONTROLLING REFERENCE: 149101-01
OVERALL HEIGHT: 0.070 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.390 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL WIDTH: 0.270 INCHES MINIMUM AND 0.330 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
SJE1768-1
TRANSISTOR
NSN, MFG P/N
5961010290213
NSN
5961-01-029-0213
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM BASE CURRENT, DC AND 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 35351
MFR SOURCE CONTROLLING REFERENCE: 149101-01
OVERALL HEIGHT: 0.070 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.390 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL WIDTH: 0.270 INCHES MINIMUM AND 0.330 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
12000102
TRANSISTOR
NSN, MFG P/N
5961010290397
NSN
5961-01-029-0397
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: UNIJUNCTION
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM FORWARD POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 19200-12000102 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM GATE VOLTAGE, DC
Related Searches:
2N6119
TRANSISTOR
NSN, MFG P/N
5961010290397
NSN
5961-01-029-0397
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: UNIJUNCTION
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM FORWARD POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 19200-12000102 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM GATE VOLTAGE, DC
Related Searches:
12251772
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010290675
NSN
5961-01-029-0675
MFG
U S ARMY TANK AUTOMOTIVE COMMAND AMSTA-IM-MM
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
III END ITEM IDENTIFICATION: M48A5
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: COMPRESSION
OVERALL LENGTH: 4.000 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 FERRULE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM FORWARD VOLTAGE, TOTAL RMS
Related Searches:
5961010290675
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010290675
NSN
5961-01-029-0675
5961010290675
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010290675
NSN
5961-01-029-0675
MFG
E.C.A ETABLISSEMENT CENTRAL DES APPROVISIONNEMENTS DES FORCES ARMEES
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
III END ITEM IDENTIFICATION: M48A5
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: COMPRESSION
OVERALL LENGTH: 4.000 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 FERRULE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM FORWARD VOLTAGE, TOTAL RMS
Related Searches:
0373 0001-4 ITEM 20
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010290985
NSN
5961-01-029-0985
0373 0001-4 ITEM 20
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010290985
NSN
5961-01-029-0985
MFG
CAMERON TECHNOLOGIES US INC . DBA CAMERONS MEASUREMENT SYSTEMS DIV MEASUREMENT SYSTEMS
Description
MAJOR COMPONENTS: BOARD 1
Related Searches:
1-67
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010290986
NSN
5961-01-029-0986
MFG
GENERAL DYNAMICS C4 SYSTEMS INC.
Description
TEST DATA DOCUMENT: 94990-1-67 DRAWING
Related Searches:
2896452-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010290989
NSN
5961-01-029-0989
2896452-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010290989
NSN
5961-01-029-0989
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: -50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 112.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -35.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -35.0 MAXIMUM GATE NON-TRIGGER VOLTAGE, DC AND -40.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR
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DMS 80064B
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010290989
NSN
5961-01-029-0989
DMS 80064B
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010290989
NSN
5961-01-029-0989
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: -50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 112.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -35.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -35.0 MAXIMUM GATE NON-TRIGGER VOLTAGE, DC AND -40.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR
Related Searches:
338132
TRANSISTOR
NSN, MFG P/N
5961010291009
NSN
5961-01-029-1009
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN MS2
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND 0.10 AMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 50.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
F1317
TRANSISTOR
NSN, MFG P/N
5961010291009
NSN
5961-01-029-1009
MFG
SOLITRON DEVICES INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND 0.10 AMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 50.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
ITS3807
TRANSISTOR
NSN, MFG P/N
5961010291009
NSN
5961-01-029-1009
MFG
INTERSIL INC SUB OF GENERAL ELECTRIC CO
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND 0.10 AMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 50.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
1-958111-002
TRANSISTOR
NSN, MFG P/N
5961010291010
NSN
5961-01-029-1010
MFG
EATON CORP ELECTRONIC INSTRUMENTATION DIV LOS ANGELES PLANT
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.192 INCHES MINIMUM AND 0.222 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.240 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.095 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
142-014
TRANSISTOR
NSN, MFG P/N
5961010291010
NSN
5961-01-029-1010
MFG
GE INFRASTRUCTURE SENSING INC. DBA GE SENSING & INSPECTION TECHNOLOGIES
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.192 INCHES MINIMUM AND 0.222 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.240 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.095 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
5001-180
TRANSISTOR
NSN, MFG P/N
5961010291010
NSN
5961-01-029-1010
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.192 INCHES MINIMUM AND 0.222 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.240 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.095 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
E175
TRANSISTOR
NSN, MFG P/N
5961010291010
NSN
5961-01-029-1010
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.192 INCHES MINIMUM AND 0.222 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.240 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.095 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
128232-0005
TRANSISTOR
NSN, MFG P/N
5961010291011
NSN
5961-01-029-1011
MFG
SYPRIS ELECTRONICS LLC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 14028-128232 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND -10.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND -20.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
2N5054
TRANSISTOR
NSN, MFG P/N
5961010291013
NSN
5961-01-029-1013
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5591 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 3.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COL
