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5961-00-754-9733

20 Products

1N327A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007549733

NSN

5961-00-754-9733

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1N327A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007549733

NSN

5961-00-754-9733

MFG

BOGUE ELECTRIC MANUFACTURING CO

Description

DESIGN CONTROL REFERENCE: 1N327A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 07860
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

9163049

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007549733

NSN

5961-00-754-9733

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9163049

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007549733

NSN

5961-00-754-9733

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

DESIGN CONTROL REFERENCE: 1N327A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 07860
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

2N338

TRANSISTOR

NSN, MFG P/N

5961007549757

NSN

5961-00-754-9757

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2N338

TRANSISTOR

NSN, MFG P/N

5961007549757

NSN

5961-00-754-9757

MFG

ENTRON INDUSTRIES LIMITED PARTNERSHIP DBA ENTRON INDUSTRIES PROPERTY DIV

Description

DESIGN CONTROL REFERENCE: 2N338
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 99872
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

G296501

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007549760

NSN

5961-00-754-9760

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G296501

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007549760

NSN

5961-00-754-9760

MFG

AMERICAN TELEPHONE AND TELEGRAPH CO

Description

CURRENT RATING PER CHARACTERISTIC: 70.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
DESIGN CONTROL REFERENCE: S36IG
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 03877
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 80.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL LENGTH: 1.312 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

S36IG

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007549760

NSN

5961-00-754-9760

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S36IG

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007549760

NSN

5961-00-754-9760

MFG

GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP

Description

CURRENT RATING PER CHARACTERISTIC: 70.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
DESIGN CONTROL REFERENCE: S36IG
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 03877
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 80.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL LENGTH: 1.312 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

1N736A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007549763

NSN

5961-00-754-9763

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1N736A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007549763

NSN

5961-00-754-9763

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2316 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 82.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

47535

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007549763

NSN

5961-00-754-9763

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47535

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007549763

NSN

5961-00-754-9763

MFG

NEWPORT ELECTRONICS INC.

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2316 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 82.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

7901612-009

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007549763

NSN

5961-00-754-9763

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7901612-009

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007549763

NSN

5961-00-754-9763

MFG

L-3 COMMUNICATIONS ELECTRONIC SYSTEMS INC

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2316 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 82.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

HZ1-4R82A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007549763

NSN

5961-00-754-9763

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HZ1-4R82A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007549763

NSN

5961-00-754-9763

MFG

DELCO ELECTRONICS CORP DELCO SYSTEMS OPNS

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2316 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 82.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

1021

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961007549767

NSN

5961-00-754-9767

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1021

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961007549767

NSN

5961-00-754-9767

MFG

SAGE LABORATORIES INC.

Description

ACCOMMODATED EQUIPMENT IDENTIFYING NUMBER: IN358
COAXIAL CONNECTOR SERIES DESIGNATION: N
DESIGN CONTROL REFERENCE: 1021
INPUT CONTACT TYPE: MALE
INPUT TERMINAL TYPE: COAXIAL CABLE
MANUFACTURERS CODE: 07180
OPERATING FREQUENCY: 10.0 MEGAHERTZ MINIMUM AND 6.0 GIGAHERTZ MAXIMUM
OUTPUT COAXIAL CONNECTION SERIES DESIGNATION: BNC
OUTPUT CONTACT TYPE: FEMALE
OUTPUT TERMINAL TYPE: COAXIAL CABLE
SPECIAL FEATURES: 0.844 IN. DIA BY 2.359 IN.
THE MANUFACTURERS DATA:

232211

TRANSISTOR

NSN, MFG P/N

5961007549790

NSN

5961-00-754-9790

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232211

TRANSISTOR

NSN, MFG P/N

5961007549790

NSN

5961-00-754-9790

MFG

W L S STAMPING CO

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN

2N176

TRANSISTOR

NSN, MFG P/N

5961007549790

NSN

5961-00-754-9790

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2N176

TRANSISTOR

NSN, MFG P/N

5961007549790

NSN

5961-00-754-9790

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN

89015-000

TRANSISTOR

NSN, MFG P/N

5961007549790

NSN

5961-00-754-9790

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89015-000

TRANSISTOR

NSN, MFG P/N

5961007549790

NSN

5961-00-754-9790

MFG

L-3 COMMUNICATIONS CORPORATION DBA NARDA MICROWAVE EAST

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN

EM103

TRANSISTOR

NSN, MFG P/N

5961007549790

NSN

5961-00-754-9790

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EM103

TRANSISTOR

NSN, MFG P/N

5961007549790

NSN

5961-00-754-9790

MFG

TDK-LAMBDA AMERICAS INC. D IV HIGH POWER DIVISION

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN

66-2820

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007549791

NSN

5961-00-754-9791

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66-2820

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007549791

NSN

5961-00-754-9791

MFG

INTERNATIONAL RECTIFIER CORPORATION

Description

DESIGN CONTROL REFERENCE: 66-2820
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 81483
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

129521-08

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007549792

NSN

5961-00-754-9792

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129521-08

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007549792

NSN

5961-00-754-9792

MFG

GE AVIATION SYSTEMS LLC

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL HEIGHT: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2215 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG

1N1358

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007549792

NSN

5961-00-754-9792

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1N1358

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007549792

NSN

5961-00-754-9792

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL HEIGHT: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2215 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG

HZPR20

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007549792

NSN

5961-00-754-9792

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HZPR20

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007549792

NSN

5961-00-754-9792

MFG

N A P SMD TECHNOLOGY INC

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL HEIGHT: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2215 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG

67300-2N398

TRANSISTOR

NSN, MFG P/N

5961007549865

NSN

5961-00-754-9865

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67300-2N398

TRANSISTOR

NSN, MFG P/N

5961007549865

NSN

5961-00-754-9865

MFG

TEXTRON SYSTEMS CORPORATION DBA TEXTRON DEFENSE SYSTEMS

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 65.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 105.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 105.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

67300-2N1091

TRANSISTOR

NSN, MFG P/N

5961007549866

NSN

5961-00-754-9866

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67300-2N1091

TRANSISTOR

NSN, MFG P/N

5961007549866

NSN

5961-00-754-9866

MFG

TEXTRON SYSTEMS CORPORATION DBA TEXTRON DEFENSE SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.200 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 20.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC