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5961-00-450-8673
20 Products
SC5960-0093-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004508673
NSN
5961-00-450-8673
SC5960-0093-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004508673
NSN
5961-00-450-8673
MFG
DRS ICAS, LLC
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.715 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.2 MAXIMUM NOMINAL REGULATOR VOLTAGE
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UZ808
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004508673
NSN
5961-00-450-8673
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.715 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.2 MAXIMUM NOMINAL REGULATOR VOLTAGE
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1N1593
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004509667
NSN
5961-00-450-9667
MFG
GENERAL DYNAMICS C4 SYSTEMS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 3.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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396731-1
TRANSISTOR
NSN, MFG P/N
5961004510557
NSN
5961-00-451-0557
MFG
EDO CORP DIV EDO CORPORATION ANTENNA PRODUCTS & TECHNOLOGIES
Description
DESIGN CONTROL REFERENCE: 396731-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 00752
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
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352-7500-831
TRANSISTOR
NSN, MFG P/N
5961004510783
NSN
5961-00-451-0783
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.352 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 15.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 50.0 MAXIMUM COLLECTOR TO EMI
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004510786
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5961-00-451-0786
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004510786
NSN
5961-00-451-0786
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
DESIGN CONTROL REFERENCE: 5339-093016
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 97384
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.375 INCHES NOMINAL
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
5339-093016
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004510786
NSN
5961-00-451-0786
5339-093016
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004510786
NSN
5961-00-451-0786
MFG
AAI CORPORATION
Description
DESIGN CONTROL REFERENCE: 5339-093016
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 97384
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.375 INCHES NOMINAL
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004510786
NSN
5961-00-451-0786
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004510786
NSN
5961-00-451-0786
MFG
NATIONAL SEMICONDUCTOR CORP
Description
DESIGN CONTROL REFERENCE: 5339-093016
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 97384
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.375 INCHES NOMINAL
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
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GE6
TRANSISTOR
NSN, MFG P/N
5961004510810
NSN
5961-00-451-0810
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN
Description
DESIGN CONTROL REFERENCE: GE6
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 09214
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.530 INCHES MAXIMUM
OVERALL HEIGHT: 0.320 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
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1971672
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004510812
NSN
5961-00-451-0812
MFG
GENERAL MOTORS CORP DELCO REMY DIV
Description
SEMICONDUCTOR DEVICE,DIODE
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004510812
NSN
5961-00-451-0812
21321971672
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004510812
NSN
5961-00-451-0812
MFG
MACK TRUCKS INC. DBA MACUNGIE OPERATIONS DIV GOVERNMENT SALES DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
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9S2291
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004510812
NSN
5961-00-451-0812
MFG
CATERPILLAR INC. DBA CATERPILLAR DIV GOVERNMENTAL AND DEFENSE PRODUCTS
Description
SEMICONDUCTOR DEVICE,DIODE
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S-5303-P
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004510812
NSN
5961-00-451-0812
MFG
ACE ELECTRIC CORP
Description
SEMICONDUCTOR DEVICE,DIODE
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0N056646
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961004510913
NSN
5961-00-451-0913
MFG
NATIONAL SECURITY AGENCY
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
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ND07478
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961004510913
NSN
5961-00-451-0913
MFG
NATIONAL SEMICONDUCTOR CORP
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
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SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961004510913
NSN
5961-00-451-0913
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SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961004510913
NSN
5961-00-451-0913
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
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044242
TRANSISTOR
NSN, MFG P/N
5961004511157
NSN
5961-00-451-1157
MFG
SIMMONDS PRECISION PRODUCTS INC. DBA GOODRICH SENSORS AND INTERGRATED SYSTMES
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: UNIJUNCTION
MANUFACTURERS CODE: 89305
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 044242
OVERALL DIAMETER: 0.205 INCHES MAXIMUM
OVERALL LENGTH: 0.265 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA: 89305-044242 MANUFACTURERS SOURCE CONTROL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.0 MAXIMUM BREAKOVER VOLTAGE, DC
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2N4992
TRANSISTOR
NSN, MFG P/N
5961004511157
NSN
5961-00-451-1157
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: UNIJUNCTION
MANUFACTURERS CODE: 89305
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 044242
OVERALL DIAMETER: 0.205 INCHES MAXIMUM
OVERALL LENGTH: 0.265 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA: 89305-044242 MANUFACTURERS SOURCE CONTROL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.0 MAXIMUM BREAKOVER VOLTAGE, DC
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1638776-103
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004511290
NSN
5961-00-451-1290
1638776-103
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004511290
NSN
5961-00-451-1290
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 1638776-103
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 10001
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY QUALITY ASSURANCE ENVIRONMENTAL TESTED IN ACCORDANCE WITH TALOS PLAN QA-1007 CHANGE NO. 1
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
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013-157
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004511376
NSN
5961-00-451-1376
MFG
AMPEX SYSTEMS CORP
Description
SEMICONDUCTOR DEVICE,DIODE
