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5961-00-409-1722
20 Products
109000PC287
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004091722
NSN
5961-00-409-1722
109000PC287
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004091722
NSN
5961-00-409-1722
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MISSILES AND FIRE CONTROL - ARCHBALD
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: A295E
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 03508
OVERALL LENGTH: 1.625 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.605 INCHES MINIMUM AND 1.640 INCHES MAXIMUM
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:
Related Searches:
L532000609
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004090276
NSN
5961-00-409-0276
L532000609
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004090276
NSN
5961-00-409-0276
MFG
LOCKHEED MARTIN LIBRASCOPE CORP
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN ALL TRANSISTOR
Related Searches:
MD5000
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004090276
NSN
5961-00-409-0276
MD5000
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004090276
NSN
5961-00-409-0276
MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN ALL TRANSISTOR
Related Searches:
1603646
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004091404
NSN
5961-00-409-1404
1603646
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004091404
NSN
5961-00-409-1404
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN MS2
Description
CURRENT RATING PER CHARACTERISTIC: 240.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.535 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.652 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: INTERNAL JUNCTION CONFIGURATION ARRANGEMENT PNPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
TEST DATA DOCUMENT: 10001-2816974 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
2816974
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004091404
NSN
5961-00-409-1404
2816974
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004091404
NSN
5961-00-409-1404
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
CURRENT RATING PER CHARACTERISTIC: 240.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.535 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.652 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: INTERNAL JUNCTION CONFIGURATION ARRANGEMENT PNPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
TEST DATA DOCUMENT: 10001-2816974 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
MCR2918-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004091404
NSN
5961-00-409-1404
MCR2918-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961004091404
NSN
5961-00-409-1404
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 240.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.535 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.652 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: INTERNAL JUNCTION CONFIGURATION ARRANGEMENT PNPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
TEST DATA DOCUMENT: 10001-2816974 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
81C274P001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004091407
NSN
5961-00-409-1407
81C274P001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004091407
NSN
5961-00-409-1407
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
7724147P2
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004091414
NSN
5961-00-409-1414
7724147P2
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004091414
NSN
5961-00-409-1414
MFG
LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 2.95 AMPERES TOTAL POWER DISSIPATION
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 560.0 SOURCE SUPPLY VOLTAGE
DESIGN CONTROL REFERENCE: 7724147P2
MANUFACTURERS CODE: 03538
MATERIAL: SILICON
MOUNTING METHOD: SLOT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 2.500 INCHES MAXIMUM
OVERALL LENGTH: 6.547 INCHES NOMINAL
OVERALL WIDTH: 1.562 INCHES NOMINAL
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: NAVORD OD41152
TERMINAL TYPE AND QUANTITY: 7 TAB
THE MANUFACTURERS DATA:
Related Searches:
245071
TRANSISTOR
NSN, MFG P/N
5961004091627
NSN
5961-00-409-1627
MFG
KIDDE TECHNOLOGIES INC DBA WALTER KIDDE AEROSPACE
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: POINT CONTACT
MANUFACTURERS CODE: 61423
MFR SOURCE CONTROLLING REFERENCE: 245071
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
2N1304
TRANSISTOR
NSN, MFG P/N
5961004091627
NSN
5961-00-409-1627
MFG
RCA CORP DISTRIBUTION AND SPECIAL PRODUCTS
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: POINT CONTACT
MANUFACTURERS CODE: 61423
MFR SOURCE CONTROLLING REFERENCE: 245071
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
0133-1023-T
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004091636
NSN
5961-00-409-1636
0133-1023-T
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004091636
NSN
5961-00-409-1636
MFG
CAMERON TECHNOLOGIES US INC . DBA CAMERONS MEASUREMENT SYSTEMS DIV MEASUREMENT SYSTEMS
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.755 INCHES NOMINAL
OVERALL WIDTH: 0.880 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD
Related Searches:
101000066
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004091636
NSN
5961-00-409-1636
101000066
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004091636
NSN
5961-00-409-1636
MFG
DATA GENERAL CORP M/S 9S17
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.755 INCHES NOMINAL
OVERALL WIDTH: 0.880 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD
Related Searches:
1DTD710000-5
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004091636
NSN
5961-00-409-1636
1DTD710000-5
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004091636
NSN
5961-00-409-1636
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.755 INCHES NOMINAL
OVERALL WIDTH: 0.880 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD
Related Searches:
218-00834-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004091636
NSN
5961-00-409-1636
218-00834-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004091636
NSN
5961-00-409-1636
MFG
VOUGHT AIRCRAFT INDUSTRIES INC.
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.755 INCHES NOMINAL
OVERALL WIDTH: 0.880 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD
Related Searches:
2710029-00
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004091636
NSN
5961-00-409-1636
2710029-00
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004091636
NSN
5961-00-409-1636
MFG
EIP MICROWAVE INC
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.755 INCHES NOMINAL
OVERALL WIDTH: 0.880 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD
Related Searches:
610050
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004091636
NSN
5961-00-409-1636
610050
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004091636
NSN
5961-00-409-1636
MFG
LOGIMETRICS INC
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.755 INCHES NOMINAL
OVERALL WIDTH: 0.880 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD
Related Searches:
884735
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004091636
NSN
5961-00-409-1636
884735
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004091636
NSN
5961-00-409-1636
MFG
NORTH ATLANTIC INDUSTRIES INC.
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.755 INCHES NOMINAL
OVERALL WIDTH: 0.880 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD
Related Searches:
KBU8A
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004091636
NSN
5961-00-409-1636
MFG
GENERAL SEMICONDUCTOR INC
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.755 INCHES NOMINAL
OVERALL WIDTH: 0.880 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD
Related Searches:
MDA970-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004091636
NSN
5961-00-409-1636
MDA970-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004091636
NSN
5961-00-409-1636
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.755 INCHES NOMINAL
OVERALL WIDTH: 0.880 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD
Related Searches:
RS401L
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004091636
NSN
5961-00-409-1636
RS401L
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004091636
NSN
5961-00-409-1636
MFG
DIODES INC
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.755 INCHES NOMINAL
OVERALL WIDTH: 0.880 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD
