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5961-01-519-0874

20 Products

SM14M12C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015190874

NSN

5961-01-519-0874

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SM14M12C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015190874

NSN

5961-01-519-0874

MFG

PROTEK DEVICES LP DBA PROTEK DEVICES

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES NOMINAL COLLECTOR CURRENT, DC
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SO-114
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.35 MILLIMETERS MINIMUM AND 1.75 MILLIMETERS MAXIMUM
OVERALL LENGTH: 8.55 MILLIMETERS MINIMUM AND 10.00 MILLIMETERS MAXIMUM
OVERALL WIDTH: 5.8 MILLIMETERS MINIMUM AND 6.2 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.40 MILLIMETERS MINIMUM AND 1.25 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 14 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.5 NOMINAL BREAKDOWN VOLTAGE, INSTANTANEOUS

SM14M08C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015190875

NSN

5961-01-519-0875

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SM14M08C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015190875

NSN

5961-01-519-0875

MFG

PROTEK DEVICES LP DBA PROTEK DEVICES

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 MICROAMPERES NOMINAL COLLECTOR CURRENT, DC
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SO-114
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.35 MILLIMETERS MINIMUM AND 1.75 MILLIMETERS MAXIMUM
OVERALL LENGTH: 8.55 MILLIMETERS MINIMUM AND 10.00 MILLIMETERS MAXIMUM
OVERALL WIDTH: 5.8 MILLIMETERS MINIMUM AND 6.2 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.40 MILLIMETERS MINIMUM AND 1.25 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 14 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.3 NOMINAL BREAKDOWN VOLTAGE, INSTANTANEOUS

IRKD56/04A

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961015190877

NSN

5961-01-519-0877

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IRKD56/04A

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961015190877

NSN

5961-01-519-0877

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES REPETITIVE PEAK REVERSE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 REPETITIVE PEAK REVERSE VOLTAGE AND 500.0 NONREPETITIVE PEAK REVERSE VOLTAGE
III END ITEM IDENTIFICATION: VOLTAGE REGULATOR, 658-EN-1B
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -40.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.180 INCHES NOMINAL
OVERALL LENGTH: 3.600 INCHES NOMINAL
OVERALL WIDTH: 0.800 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 TAB W/SCREW

SEN-4397 C51B S

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015191043

NSN

5961-01-519-1043

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SEN-4397 C51B S

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015191043

NSN

5961-01-519-1043

MFG

RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR

SEN-4141-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015191044

NSN

5961-01-519-1044

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SEN-4141-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015191044

NSN

5961-01-519-1044

MFG

RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR

MMBZ5234B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015191253

NSN

5961-01-519-1253

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MMBZ5234B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015191253

NSN

5961-01-519-1253

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

III PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE, ZENER, 6.2V

3866221

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015191751

NSN

5961-01-519-1751

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3866221

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015191751

NSN

5961-01-519-1751

MFG

CUMMINS INC.

0728-48A

DIODE,NVIS

NSN, MFG P/N

5961015191903

NSN

5961-01-519-1903

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0728-48A

DIODE,NVIS

NSN, MFG P/N

5961015191903

NSN

5961-01-519-1903

MFG

PYNCO INC

11439244

CONTACT,DIODE

NSN, MFG P/N

5961015192309

NSN

5961-01-519-2309

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11439244

CONTACT,DIODE

NSN, MFG P/N

5961015192309

NSN

5961-01-519-2309

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

III END ITEM IDENTIFICATION: PATRIOT
III PRECIOUS MATERIAL: GOLD
MATERIAL: COPPER
OVERALL HEIGHT: 0.150 INCHES NOMINAL
OVERALL LENGTH: 0.410 INCHES NOMINAL

1776629-201

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961015193185

NSN

5961-01-519-3185

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1776629-201

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961015193185

NSN

5961-01-519-3185

MFG

FIRSTMARK AEROSPACE CORPORATION

JANTX2N6796U

TRANSISTOR

NSN, MFG P/N

5961015194957

NSN

5961-01-519-4957

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JANTX2N6796U

TRANSISTOR

NSN, MFG P/N

5961015194957

NSN

5961-01-519-4957

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: EUROFIGHTER 2000
III PART NAME ASSIGNED BY CONTROLLING AGENCY: HEXFET TRANSISTORS
OVERALL HEIGHT: 7.120 MILLIMETERS MINIMUM AND 7.490 MILLIMETERS MAXIMUM
OVERALL LENGTH: 8.770 MILLIMETERS MINIMUM AND 9.140 MILLIMETERS MAXIMUM
SPECIAL FEATURES: SURFACE MOUNT;AVALANCHE ENERGY RATING;18 PIN LCC;DISCRETE CIRCUIT;25 WATT POWER DISSIPATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL DRAIN TO SOURCE VOLTAGE

1N5361B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015197107

NSN

5961-01-519-7107

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1N5361B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015197107

NSN

5961-01-519-7107

MFG

SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

1N4002L

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015197883

NSN

5961-01-519-7883

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1N4002L

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015197883

NSN

5961-01-519-7883

MFG

DIODES INC

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 2.000 MILLIMETERS MINIMUM AND 2.700 MILLIMETERS MAXIMUM
OVERALL LENGTH: 4.100 MILLIMETERS MINIMUM AND 5.200 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

252-7108324PN176

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015197883

NSN

5961-01-519-7883

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252-7108324PN176

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015197883

NSN

5961-01-519-7883

MFG

NAVAL SEA SYSTEMS COMMAND

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 2.000 MILLIMETERS MINIMUM AND 2.700 MILLIMETERS MAXIMUM
OVERALL LENGTH: 4.100 MILLIMETERS MINIMUM AND 5.200 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

1SMC70AT3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015198258

NSN

5961-01-519-8258

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1SMC70AT3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015198258

NSN

5961-01-519-8258

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM REVERSE CURRENT, PEAK
SPECIAL FEATURES: 1500 WAT PEAK POWER ZENER TRANSIENT VOLTAGE SUPPRESSORS; UNIDIRECTIONAL; PACKAGE SMC; PACKAGE STYLE, SURFACE MOUNT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

MA4ST523C-287

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015198582

NSN

5961-01-519-8582

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MA4ST523C-287

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015198582

NSN

5961-01-519-8582

MFG

M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM

356A1451P68

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015198924

NSN

5961-01-519-8924

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356A1451P68

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015198924

NSN

5961-01-519-8924

MFG

BAE SYSTEMS CONTROLS INC.

Description

CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: C-17AIRCRAFT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ELECTROSTATIC DISCHARGE SENSITIVE

BAS116LT1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015198924

NSN

5961-01-519-8924

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BAS116LT1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015198924

NSN

5961-01-519-8924

MFG

SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS

Description

CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: C-17AIRCRAFT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ELECTROSTATIC DISCHARGE SENSITIVE

TN2524N8

TRANSISTOR

NSN, MFG P/N

5961015203100

NSN

5961-01-520-3100

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TN2524N8

TRANSISTOR

NSN, MFG P/N

5961015203100

NSN

5961-01-520-3100

MFG

SUPERTEX INC.

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES NOMINAL ON-STATE DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.161 INCHES NOMINAL
OVERALL LENGTH: 0.177 INCHES NOMINAL
OVERALL WIDTH: 0.059 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.6 WATTS NOMINAL ON-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.041 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 NOMINAL GATE TO SOURCE THRESHOLD VOLTAGE

IRFI540G

TRANSISTOR

NSN, MFG P/N

5961015203320

NSN

5961-01-520-3320

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IRFI540G

TRANSISTOR

NSN, MFG P/N

5961015203320

NSN

5961-01-520-3320

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

CURRENT RATING PER CHARACTERISTIC: 17.00 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: W/HEAT SINK
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.180 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.622 INCHES MINIMUM AND 0.635 INCHES MAXIMUM
OVERALL WIDTH: 0.408 INCHES MINIMUM AND 0.419 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 48.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ISOLATED PACKAGE; HIGH VOLTAGE ISOLATION; LOW THERMAL RESISTANCE
TERMINAL CIRCLE DIAMETER: 0.048 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
TERMINAL LENGTH: 0.520 INCHES MINIMUM AND 0.541 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE