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5961-01-040-6423

20 Products

1N5815

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010406423

NSN

5961-01-040-6423

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1N5815

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010406423

NSN

5961-01-040-6423

MFG

MICRO USPD INC

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5816
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
III END ITEM IDENTIFICATION: CENTRAL MESSAGE SWITCH, AN/TYC-39A; SUPPORT EQUIPMENT, B-52 AIRCRAFT; AIRCRAFT, SOF (AC-130H, MC-130H, EC-130E, HC-130); TACTICAL DATA SYSTEM, AN/UYA-4(V); TACTICAL AIR OPNS MODULE (AN/TYQ-(23); COMPUTER DISPLAY SET AN/UYQ-21(V); SUPPORT EQUIPMENT, B-1
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/478
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 IN

352-0829-030

TRANSISTOR

NSN, MFG P/N

5961010405762

NSN

5961-01-040-5762

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352-0829-030

TRANSISTOR

NSN, MFG P/N

5961010405762

NSN

5961-01-040-5762

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM EMITTER CUTOFF CURRENT, DC, COLLECTOR OPEN
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

65493

TRANSISTOR

NSN, MFG P/N

5961010405762

NSN

5961-01-040-5762

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65493

TRANSISTOR

NSN, MFG P/N

5961010405762

NSN

5961-01-040-5762

MFG

INTERSIL CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM EMITTER CUTOFF CURRENT, DC, COLLECTOR OPEN
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

C0L-14

TRANSISTOR

NSN, MFG P/N

5961010405762

NSN

5961-01-040-5762

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C0L-14

TRANSISTOR

NSN, MFG P/N

5961010405762

NSN

5961-01-040-5762

MFG

TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM EMITTER CUTOFF CURRENT, DC, COLLECTOR OPEN
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

MD8003

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010405769

NSN

5961-01-040-5769

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MD8003

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010405769

NSN

5961-01-040-5769

MFG

FREESCALE SEMICONDUCTOR INC.

Description

DESIGN CONTROL REFERENCE: MD8003
MANUFACTURERS CODE: 04713
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM FORWARD POWER DISSIPATION, MAXIMUM PEAK, TOTAL VALUE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

UTR2340

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010405770

NSN

5961-01-040-5770

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UTR2340

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010405770

NSN

5961-01-040-5770

MFG

MICRO USPD INC

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

2N1328

TRANSISTOR

NSN, MFG P/N

5961010406070

NSN

5961-01-040-6070

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2N1328

TRANSISTOR

NSN, MFG P/N

5961010406070

NSN

5961-01-040-6070

MFG

SILICON TRANSISTOR CORP SUB OF BBF INC

Description

INTERNAL CONFIGURATION: JUNCTION CONTACT
OVERALL DIAMETER: 0.650 INCHES MAXIMUM
OVERALL HEIGHT: 1.040 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

2534980

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010406372

NSN

5961-01-040-6372

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2534980

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010406372

NSN

5961-01-040-6372

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18000.0 PEAK INVERSE VOLTAGE
OVERALL HEIGHT: 0.437 INCHES MAXIMUM
OVERALL LENGTH: 1.125 INCHES MAXIMUM
OVERALL WIDTH: 1.125 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 TURRET

ED7659B

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010406372

NSN

5961-01-040-6372

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ED7659B

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010406372

NSN

5961-01-040-6372

MFG

ELECTRONIC DEVICES INC DBA E D I

Description

ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18000.0 PEAK INVERSE VOLTAGE
OVERALL HEIGHT: 0.437 INCHES MAXIMUM
OVERALL LENGTH: 1.125 INCHES MAXIMUM
OVERALL WIDTH: 1.125 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 TURRET

2N3323

TRANSISTOR

NSN, MFG P/N

5961010406415

NSN

5961-01-040-6415

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2N3323

TRANSISTOR

NSN, MFG P/N

5961010406415

NSN

5961-01-040-6415

MFG

SOLID STATE DEVICES INC.

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.208 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 08771-A4037764 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 35.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC

A4037764P1

TRANSISTOR

NSN, MFG P/N

5961010406415

NSN

5961-01-040-6415

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A4037764P1

TRANSISTOR

NSN, MFG P/N

5961010406415

NSN

5961-01-040-6415

MFG

GENERAL ELECTRIC CO MOBILE COMMUNICATIONS BUSINESS DIV

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.208 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 08771-A4037764 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 35.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC

13-812544-1

TRANSISTOR

NSN, MFG P/N

5961010406417

NSN

5961-01-040-6417

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13-812544-1

TRANSISTOR

NSN, MFG P/N

5961010406417

NSN

5961-01-040-6417

MFG

GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS INC. DBA GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 07397-13-812544 DRAWING

2N3742

TRANSISTOR

NSN, MFG P/N

5961010406417

NSN

5961-01-040-6417

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2N3742

TRANSISTOR

NSN, MFG P/N

5961010406417

NSN

5961-01-040-6417

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 07397-13-812544 DRAWING

ST807H

TRANSISTOR

NSN, MFG P/N

5961010406417

NSN

5961-01-040-6417

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ST807H

TRANSISTOR

NSN, MFG P/N

5961010406417

NSN

5961-01-040-6417

MFG

FREESCALE SEMICONDUCTOR INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 07397-13-812544 DRAWING

152-0578-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010406420

NSN

5961-01-040-6420

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152-0578-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010406420

NSN

5961-01-040-6420

MFG

TEKTRONIX INC. DBA TEKTRONIX

Description

CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MAXIMUM REVERSE VOLTAGE, PEAK

V34-4202

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010406420

NSN

5961-01-040-6420

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V34-4202

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010406420

NSN

5961-01-040-6420

MFG

MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL

Description

CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MAXIMUM REVERSE VOLTAGE, PEAK

1S2130A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010406421

NSN

5961-01-040-6421

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1S2130A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010406421

NSN

5961-01-040-6421

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

OVERALL DIAMETER: 0.080 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

D3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010406421

NSN

5961-01-040-6421

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D3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010406421

NSN

5961-01-040-6421

MFG

SMITHS AEROSPACE CUSTOMER SERVICES DIVISION

Description

OVERALL DIAMETER: 0.080 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

20-00903-020

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010406423

NSN

5961-01-040-6423

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20-00903-020

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010406423

NSN

5961-01-040-6423

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5816
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
III END ITEM IDENTIFICATION: CENTRAL MESSAGE SWITCH, AN/TYC-39A; SUPPORT EQUIPMENT, B-52 AIRCRAFT; AIRCRAFT, SOF (AC-130H, MC-130H, EC-130E, HC-130); TACTICAL DATA SYSTEM, AN/UYA-4(V); TACTICAL AIR OPNS MODULE (AN/TYQ-(23); COMPUTER DISPLAY SET AN/UYQ-21(V); SUPPORT EQUIPMENT, B-1
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/478
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 IN

28821-1355404

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010406423

NSN

5961-01-040-6423

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28821-1355404

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010406423

NSN

5961-01-040-6423

MFG

FERRANTI TECHNOLOGIES LTD

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5816
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
III END ITEM IDENTIFICATION: CENTRAL MESSAGE SWITCH, AN/TYC-39A; SUPPORT EQUIPMENT, B-52 AIRCRAFT; AIRCRAFT, SOF (AC-130H, MC-130H, EC-130E, HC-130); TACTICAL DATA SYSTEM, AN/UYA-4(V); TACTICAL AIR OPNS MODULE (AN/TYQ-(23); COMPUTER DISPLAY SET AN/UYQ-21(V); SUPPORT EQUIPMENT, B-1
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/478
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 IN