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5961-01-447-4113

20 Products

SMP60N03-10L

TRANSISTOR

NSN, MFG P/N

5961014474113

NSN

5961-01-447-4113

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SMP60N03-10L

TRANSISTOR

NSN, MFG P/N

5961014474113

NSN

5961-01-447-4113

MFG

SILICONIX INCORPORATED D IV SILICONIX

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 60.00 AMPERES MINIMUM DRAIN CURRENT
SPECIAL FEATURES: STORAGE TEMPERATURE RANGE MINUS 55 TO 150 CELIUS; LEAD TEMPERATURE 300 CELIUS
TERMINAL TYPE AND QUANTITY: 3 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 NOMINAL DRAIN TO SOURCE VOLTAGE

56-102934-02

WAFER,THERMAL

NSN, MFG P/N

5961014466894

NSN

5961-01-446-6894

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56-102934-02

WAFER,THERMAL

NSN, MFG P/N

5961014466894

NSN

5961-01-446-6894

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE

Description

III END ITEM IDENTIFICATION: RADAR WARNING SYSTEM, AN/ANL-68A(V)-3, LITTON SYSTEMS INC

16341

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961014466905

NSN

5961-01-446-6905

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16341

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961014466905

NSN

5961-01-446-6905

MFG

ENVIRONMENTAL TECHNOLOGY INC

12932510

TRANSISTOR

NSN, MFG P/N

5961014469125

NSN

5961-01-446-9125

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12932510

TRANSISTOR

NSN, MFG P/N

5961014469125

NSN

5961-01-446-9125

MFG

U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND

Description

CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: 1220-01-416-6249, FSCM 19200
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL PROCESS

2N6756

TRANSISTOR

NSN, MFG P/N

5961014469125

NSN

5961-01-446-9125

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2N6756

TRANSISTOR

NSN, MFG P/N

5961014469125

NSN

5961-01-446-9125

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: 1220-01-416-6249, FSCM 19200
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL PROCESS

NH-12932510

TRANSISTOR

NSN, MFG P/N

5961014469125

NSN

5961-01-446-9125

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NH-12932510

TRANSISTOR

NSN, MFG P/N

5961014469125

NSN

5961-01-446-9125

MFG

DLA LAND AND MARITIME

Description

CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: 1220-01-416-6249, FSCM 19200
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL PROCESS

1N2974BJANTX

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014469291

NSN

5961-01-446-9291

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1N2974BJANTX

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014469291

NSN

5961-01-446-9291

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

3042030

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014469291

NSN

5961-01-446-9291

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3042030

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014469291

NSN

5961-01-446-9291

MFG

THALES UK LTD THALES AEROSPACE

Description

CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

28383/902

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014469815

NSN

5961-01-446-9815

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28383/902

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014469815

NSN

5961-01-446-9815

MFG

AEROFLEX WICHITA INC.

A3030178

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014469815

NSN

5961-01-446-9815

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A3030178

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014469815

NSN

5961-01-446-9815

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

BAW56

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014469815

NSN

5961-01-446-9815

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BAW56

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014469815

NSN

5961-01-446-9815

MFG

BC COMPONENTS

A3173089

TRANSISTOR

NSN, MFG P/N

5961014471269

NSN

5961-01-447-1269

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A3173089

TRANSISTOR

NSN, MFG P/N

5961014471269

NSN

5961-01-447-1269

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

III END ITEM IDENTIFICATION: 5820-01-365-2721 E/I FSCM 80058
INTERNAL CONFIGURATION: FIELD EFFECT
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT

VN2222NC H346

TRANSISTOR

NSN, MFG P/N

5961014471269

NSN

5961-01-447-1269

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VN2222NC H346

TRANSISTOR

NSN, MFG P/N

5961014471269

NSN

5961-01-447-1269

MFG

SUPERTEX INC.

Description

III END ITEM IDENTIFICATION: 5820-01-365-2721 E/I FSCM 80058
INTERNAL CONFIGURATION: FIELD EFFECT
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT

26141-924-00-6 ITEM 053

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014471981

NSN

5961-01-447-1981

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26141-924-00-6 ITEM 053

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014471981

NSN

5961-01-447-1981

MFG

BRITISH AEROSPACE DEFENCE SYSTEMS LT D T/A BAE SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL REVERSE CURRENT, DC
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 NOMINAL REVERSE VOLTAGE, PEAK

ICTE-10

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014471981

NSN

5961-01-447-1981

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ICTE-10

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014471981

NSN

5961-01-447-1981

MFG

GENERAL INSTRUMENTS UK LTD

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL REVERSE CURRENT, DC
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 NOMINAL REVERSE VOLTAGE, PEAK

ICTE10

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014471981

NSN

5961-01-447-1981

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ICTE10

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014471981

NSN

5961-01-447-1981

MFG

GENERAL SEMICONDUCTOR INC

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL REVERSE CURRENT, DC
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 NOMINAL REVERSE VOLTAGE, PEAK

048946-0002

TRANSISTOR

NSN, MFG P/N

5961014472596

NSN

5961-01-447-2596

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048946-0002

TRANSISTOR

NSN, MFG P/N

5961014472596

NSN

5961-01-447-2596

MFG

THALES ATM INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: VOR-DME

MX0912B380YW

TRANSISTOR

NSN, MFG P/N

5961014472596

NSN

5961-01-447-2596

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MX0912B380YW

TRANSISTOR

NSN, MFG P/N

5961014472596

NSN

5961-01-447-2596

MFG

U S DEPT OF TRANSPORTATION FEDERAL AVIATION ADMINISTRATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: VOR-DME

44-223636-01

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014473146

NSN

5961-01-447-3146

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44-223636-01

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014473146

NSN

5961-01-447-3146

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE

Description

III END ITEM IDENTIFICATION: LITTON SYSTEMS, RADAR WARNING SYSTEM, AN/ANL-68A(V)-3

77092410

TRANSISTOR

NSN, MFG P/N

5961014474113

NSN

5961-01-447-4113

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77092410

TRANSISTOR

NSN, MFG P/N

5961014474113

NSN

5961-01-447-4113

MFG

ALCATEL - LUCENT FRANCE

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 60.00 AMPERES MINIMUM DRAIN CURRENT
SPECIAL FEATURES: STORAGE TEMPERATURE RANGE MINUS 55 TO 150 CELIUS; LEAD TEMPERATURE 300 CELIUS
TERMINAL TYPE AND QUANTITY: 3 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 NOMINAL DRAIN TO SOURCE VOLTAGE