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5961-01-130-9212

20 Products

SZ30016-228

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011309212

NSN

5961-01-130-9212

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SZ30016-228

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011309212

NSN

5961-01-130-9212

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 7.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
III END ITEM IDENTIFICATION: MULTI-HULL 03950
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 14.3 MAXIMUM NOMINAL REGULATOR VOLTAGE

28020-13-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011308552

NSN

5961-01-130-8552

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28020-13-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011308552

NSN

5961-01-130-8552

MFG

ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC

Description

(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 1.5 GRAMS
CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES MAXIMUM PEAK PULSE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
III END ITEM IDENTIFICATION: GHSD 76301
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.190 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES MINIMUM AND 0.375 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 23426-28020 DRAWING

GZ82417N

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011308552

NSN

5961-01-130-8552

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GZ82417N

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011308552

NSN

5961-01-130-8552

MFG

PROTEK DEVICES LP DBA PROTEK DEVICES

Description

(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 1.5 GRAMS
CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES MAXIMUM PEAK PULSE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
III END ITEM IDENTIFICATION: GHSD 76301
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.190 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES MINIMUM AND 0.375 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 23426-28020 DRAWING

ICTE 18C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011308552

NSN

5961-01-130-8552

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ICTE 18C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011308552

NSN

5961-01-130-8552

MFG

GENERAL SEMICONDUCTOR INDUSTRIES INC

Description

(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 1.5 GRAMS
CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES MAXIMUM PEAK PULSE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
III END ITEM IDENTIFICATION: GHSD 76301
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.190 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES MINIMUM AND 0.375 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 23426-28020 DRAWING

1C44214E01

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011308942

NSN

5961-01-130-8942

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1C44214E01

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011308942

NSN

5961-01-130-8942

MFG

MOTOROLA INC MOTOROLA AUTOMOTIVE ELECTRONICS

AT49449

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011308942

NSN

5961-01-130-8942

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AT49449

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011308942

NSN

5961-01-130-8942

MFG

DEERE & CO

1-18

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961011308943

NSN

5961-01-130-8943

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1-18

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961011308943

NSN

5961-01-130-8943

MFG

MOTOROLA INC MOTOROLA AUTOMOTIVE ELECTRONICS

Description

MAJOR COMPONENTS: RECTIFIER 3; PLATE 1
SPECIAL FEATURES: METAL ALLOY SEMICIRCULAR PLATE WITH 2 THREADED MTG STUDS

AT49450

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961011308943

NSN

5961-01-130-8943

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AT49450

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961011308943

NSN

5961-01-130-8943

MFG

DEERE & CO

Description

MAJOR COMPONENTS: RECTIFIER 3; PLATE 1
SPECIAL FEATURES: METAL ALLOY SEMICIRCULAR PLATE WITH 2 THREADED MTG STUDS

48D44693E01

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011308944

NSN

5961-01-130-8944

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48D44693E01

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011308944

NSN

5961-01-130-8944

MFG

MOTOROLA INC MOTOROLA AUTOMOTIVE ELECTRONICS

AT49451

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011308944

NSN

5961-01-130-8944

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AT49451

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011308944

NSN

5961-01-130-8944

MFG

DEERE & CO

151-0615-01

TRANSISTOR

NSN, MFG P/N

5961011309207

NSN

5961-01-130-9207

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151-0615-01

TRANSISTOR

NSN, MFG P/N

5961011309207

NSN

5961-01-130-9207

MFG

TEKTRONIX INC. DBA TEKTRONIX

Description

CURRENT RATING PER CHARACTERISTIC: 250.00 AMPERES MAXIMUM BASE CURRENT, DC AND 500.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-202
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.180 INCHES NOMINAL
OVERALL LENGTH: 0.745 INCHES NOMINAL
OVERALL WIDTH: 0.385 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 300.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

2N6558

TRANSISTOR

NSN, MFG P/N

5961011309207

NSN

5961-01-130-9207

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2N6558

TRANSISTOR

NSN, MFG P/N

5961011309207

NSN

5961-01-130-9207

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 250.00 AMPERES MAXIMUM BASE CURRENT, DC AND 500.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-202
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.180 INCHES NOMINAL
OVERALL LENGTH: 0.745 INCHES NOMINAL
OVERALL WIDTH: 0.385 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 300.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

DMS 87011B

TRANSISTOR

NSN, MFG P/N

5961011309207

NSN

5961-01-130-9207

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DMS 87011B

TRANSISTOR

NSN, MFG P/N

5961011309207

NSN

5961-01-130-9207

MFG

DLA LAND AND MARITIME

Description

CURRENT RATING PER CHARACTERISTIC: 250.00 AMPERES MAXIMUM BASE CURRENT, DC AND 500.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-202
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.180 INCHES NOMINAL
OVERALL LENGTH: 0.745 INCHES NOMINAL
OVERALL WIDTH: 0.385 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 300.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

310025

TRANSISTOR

NSN, MFG P/N

5961011309209

NSN

5961-01-130-9209

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310025

TRANSISTOR

NSN, MFG P/N

5961011309209

NSN

5961-01-130-9209

MFG

DATRON WORLD COMMUNICATIONS INC.

Description

CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM BASE CURRENT, DC AND 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: JSS ROCC 05869
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.130 INCHES NOMINAL
OVERALL LENGTH: 0.638 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 90.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 70.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

MJE3055K

TRANSISTOR

NSN, MFG P/N

5961011309209

NSN

5961-01-130-9209

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MJE3055K

TRANSISTOR

NSN, MFG P/N

5961011309209

NSN

5961-01-130-9209

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM BASE CURRENT, DC AND 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: JSS ROCC 05869
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.130 INCHES NOMINAL
OVERALL LENGTH: 0.638 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 90.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 70.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

642AS4248

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011309210

NSN

5961-01-130-9210

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642AS4248

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011309210

NSN

5961-01-130-9210

MFG

NAVAL AIR SYSTEMS COMMAND

Description

CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: MULTI-HULL 03950
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 30003-642AS4248 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC

1902-1261

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011309211

NSN

5961-01-130-9211

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1902-1261

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011309211

NSN

5961-01-130-9211

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

CURRENT RATING PER CHARACTERISTIC: 0.20 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
III END ITEM IDENTIFICATION: MULTI-HULL 03950
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.3 MAXIMUM NOMINAL REGULATOR VOLTAGE

SZ51254

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011309211

NSN

5961-01-130-9211

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SZ51254

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011309211

NSN

5961-01-130-9211

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 0.20 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
III END ITEM IDENTIFICATION: MULTI-HULL 03950
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.3 MAXIMUM NOMINAL REGULATOR VOLTAGE

1902-3202

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011309212

NSN

5961-01-130-9212

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1902-3202

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011309212

NSN

5961-01-130-9212

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

CURRENT RATING PER CHARACTERISTIC: 7.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
III END ITEM IDENTIFICATION: MULTI-HULL 03950
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 14.3 MAXIMUM NOMINAL REGULATOR VOLTAGE

DZ781109A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011309212

NSN

5961-01-130-9212

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DZ781109A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011309212

NSN

5961-01-130-9212

MFG

MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI

Description

CURRENT RATING PER CHARACTERISTIC: 7.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
III END ITEM IDENTIFICATION: MULTI-HULL 03950
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 14.3 MAXIMUM NOMINAL REGULATOR VOLTAGE