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5961-01-428-2168
20 Products
UM9441
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014282168
NSN
5961-01-428-2168
MFG
MICRO USPD INC
Description
III END ITEM IDENTIFICATION: NAVIGATIONSYS E/I FSCM 88818
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL LENGTH: 0.150 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
A531A265-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014282168
NSN
5961-01-428-2168
A531A265-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014282168
NSN
5961-01-428-2168
MFG
SOLID STATE DEVICES INC.
Description
III END ITEM IDENTIFICATION: NAVIGATIONSYS E/I FSCM 88818
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL LENGTH: 0.150 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
NHA531A238-202
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014282168
NSN
5961-01-428-2168
NHA531A238-202
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014282168
NSN
5961-01-428-2168
MFG
DLA LAND AND MARITIME
Description
III END ITEM IDENTIFICATION: NAVIGATIONSYS E/I FSCM 88818
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL LENGTH: 0.150 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
JANTXV2N2222AUA
TRANSISTOR
NSN, MFG P/N
5961014282169
NSN
5961-01-428-2169
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N2222AUA
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/255
OVERALL HEIGHT: 0.061 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.215 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
OVERALL WIDTH: 0.145 INCHES MINIMUM AND 0.155 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.16 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/255 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 4 BONDING PAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
446060-0001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014282274
NSN
5961-01-428-2274
446060-0001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014282274
NSN
5961-01-428-2274
MFG
THALES ATM INC.
Description
III END ITEM IDENTIFICATION: DME
Related Searches:
ZN0101CC01M
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014282274
NSN
5961-01-428-2274
ZN0101CC01M
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014282274
NSN
5961-01-428-2274
MFG
MICA MICROWAVE CORPORATION
Description
III END ITEM IDENTIFICATION: DME
Related Searches:
DR30038
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014282402
NSN
5961-01-428-2402
MFG
GAR ENTERPRISES DBA K G S ELECTRONICS
Description
III END ITEM IDENTIFICATION: ELECTRONIC SPARE PART FOR INVERTER STATIC
Related Searches:
QF20045
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961014282404
NSN
5961-01-428-2404
MFG
GAR ENTERPRISES DBA K G S ELECTRONICS
Description
III END ITEM IDENTIFICATION: ELECTRONIC SPARE PART FOR INVERTER STATIC
Related Searches:
FE3B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014282427
NSN
5961-01-428-2427
MFG
GENERAL SEMICONDUCTOR INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
OVERALL LENGTH: 0.215 INCHES NOMINAL
OVERALL WIDTH: 0.293 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: PLATED AXIAL LEADS; MOUNTING STYLE, THROUGH-HOLE; EPITAXIAL RECTIFIER; CURRENT, 3 AMPS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
40-0414800-5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014282488
NSN
5961-01-428-2488
40-0414800-5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014282488
NSN
5961-01-428-2488
MFG
LIEBERT CORP PROGRAMMED POWER DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
40-0473400-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014282489
NSN
5961-01-428-2489
40-0473400-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014282489
NSN
5961-01-428-2489
MFG
LIEBERT CORP PROGRAMMED POWER DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
7920991-00
TRANSISTOR
NSN, MFG P/N
5961014282979
NSN
5961-01-428-2979
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
TRANSISTOR
Related Searches:
SD210DE
TRANSISTOR
NSN, MFG P/N
5961014282979
NSN
5961-01-428-2979
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
TRANSISTOR
Related Searches:
VHF28-06GO5
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014283038
NSN
5961-01-428-3038
VHF28-06GO5
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014283038
NSN
5961-01-428-3038
MFG
IXYS CORPORATION
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
DSI35-04A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014283041
NSN
5961-01-428-3041
MFG
IXYS CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 52.00 AMPERES NOMINAL FORWARD CURRENT, AVERAGE AND 650.00 AMPERES NOMINAL PEAK FORWARD SURGE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.677 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 11.0 KILOWATTS NOMINAL NONREPETITIVE PEAK REVERSE POWER
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
KC324515
TRANSISTOR
NSN, MFG P/N
5961014283055
NSN
5961-01-428-3055
MFG
POWEREX INC
Description
TRANSISTOR
Related Searches:
4P313
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014283777
NSN
5961-01-428-3777
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC
III END ITEM IDENTIFICATION: PACER DAWN
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.145 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
7542152P1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014283777
NSN
5961-01-428-3777
MFG
LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC
III END ITEM IDENTIFICATION: PACER DAWN
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.145 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
FE1C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014283924
NSN
5961-01-428-3924
MFG
GENERAL SEMICONDUCTOR INC
Description
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES NOMINAL
OVERALL LENGTH: 0.240 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.034 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
FE1D
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014283925
NSN
5961-01-428-3925
MFG
GENERAL SEMICONDUCTOR INC
Description
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES NOMINAL
OVERALL LENGTH: 0.240 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.034 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE
