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5961-01-428-2168

20 Products

UM9441

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014282168

NSN

5961-01-428-2168

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UM9441

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014282168

NSN

5961-01-428-2168

MFG

MICRO USPD INC

Description

III END ITEM IDENTIFICATION: NAVIGATIONSYS E/I FSCM 88818
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL LENGTH: 0.150 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

A531A265-101

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014282168

NSN

5961-01-428-2168

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A531A265-101

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014282168

NSN

5961-01-428-2168

MFG

SOLID STATE DEVICES INC.

Description

III END ITEM IDENTIFICATION: NAVIGATIONSYS E/I FSCM 88818
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL LENGTH: 0.150 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

NHA531A238-202

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014282168

NSN

5961-01-428-2168

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NHA531A238-202

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014282168

NSN

5961-01-428-2168

MFG

DLA LAND AND MARITIME

Description

III END ITEM IDENTIFICATION: NAVIGATIONSYS E/I FSCM 88818
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL LENGTH: 0.150 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

JANTXV2N2222AUA

TRANSISTOR

NSN, MFG P/N

5961014282169

NSN

5961-01-428-2169

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JANTXV2N2222AUA

TRANSISTOR

NSN, MFG P/N

5961014282169

NSN

5961-01-428-2169

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N2222AUA
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/255
OVERALL HEIGHT: 0.061 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.215 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
OVERALL WIDTH: 0.145 INCHES MINIMUM AND 0.155 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.16 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/255 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 4 BONDING PAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

446060-0001

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014282274

NSN

5961-01-428-2274

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446060-0001

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014282274

NSN

5961-01-428-2274

MFG

THALES ATM INC.

ZN0101CC01M

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014282274

NSN

5961-01-428-2274

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ZN0101CC01M

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014282274

NSN

5961-01-428-2274

MFG

MICA MICROWAVE CORPORATION

DR30038

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014282402

NSN

5961-01-428-2402

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DR30038

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014282402

NSN

5961-01-428-2402

MFG

GAR ENTERPRISES DBA K G S ELECTRONICS

Description

III END ITEM IDENTIFICATION: ELECTRONIC SPARE PART FOR INVERTER STATIC

QF20045

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961014282404

NSN

5961-01-428-2404

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QF20045

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961014282404

NSN

5961-01-428-2404

MFG

GAR ENTERPRISES DBA K G S ELECTRONICS

Description

III END ITEM IDENTIFICATION: ELECTRONIC SPARE PART FOR INVERTER STATIC

FE3B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014282427

NSN

5961-01-428-2427

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FE3B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014282427

NSN

5961-01-428-2427

MFG

GENERAL SEMICONDUCTOR INC

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
OVERALL LENGTH: 0.215 INCHES NOMINAL
OVERALL WIDTH: 0.293 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: PLATED AXIAL LEADS; MOUNTING STYLE, THROUGH-HOLE; EPITAXIAL RECTIFIER; CURRENT, 3 AMPS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE

40-0414800-5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014282488

NSN

5961-01-428-2488

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40-0414800-5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014282488

NSN

5961-01-428-2488

MFG

LIEBERT CORP PROGRAMMED POWER DIV

40-0473400-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014282489

NSN

5961-01-428-2489

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40-0473400-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014282489

NSN

5961-01-428-2489

MFG

LIEBERT CORP PROGRAMMED POWER DIV

7920991-00

TRANSISTOR

NSN, MFG P/N

5961014282979

NSN

5961-01-428-2979

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7920991-00

TRANSISTOR

NSN, MFG P/N

5961014282979

NSN

5961-01-428-2979

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2

SD210DE

TRANSISTOR

NSN, MFG P/N

5961014282979

NSN

5961-01-428-2979

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SD210DE

TRANSISTOR

NSN, MFG P/N

5961014282979

NSN

5961-01-428-2979

MFG

SILICONIX INCORPORATED D IV SILICONIX

VHF28-06GO5

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014283038

NSN

5961-01-428-3038

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VHF28-06GO5

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014283038

NSN

5961-01-428-3038

MFG

IXYS CORPORATION

DSI35-04A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014283041

NSN

5961-01-428-3041

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DSI35-04A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014283041

NSN

5961-01-428-3041

MFG

IXYS CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 52.00 AMPERES NOMINAL FORWARD CURRENT, AVERAGE AND 650.00 AMPERES NOMINAL PEAK FORWARD SURGE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.677 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 11.0 KILOWATTS NOMINAL NONREPETITIVE PEAK REVERSE POWER
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE

KC324515

TRANSISTOR

NSN, MFG P/N

5961014283055

NSN

5961-01-428-3055

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KC324515

TRANSISTOR

NSN, MFG P/N

5961014283055

NSN

5961-01-428-3055

MFG

POWEREX INC

4P313

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014283777

NSN

5961-01-428-3777

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4P313

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014283777

NSN

5961-01-428-3777

MFG

M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC
III END ITEM IDENTIFICATION: PACER DAWN
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.145 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

7542152P1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014283777

NSN

5961-01-428-3777

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7542152P1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014283777

NSN

5961-01-428-3777

MFG

LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC
III END ITEM IDENTIFICATION: PACER DAWN
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.145 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

FE1C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014283924

NSN

5961-01-428-3924

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FE1C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014283924

NSN

5961-01-428-3924

MFG

GENERAL SEMICONDUCTOR INC

Description

FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES NOMINAL
OVERALL LENGTH: 0.240 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.034 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE

FE1D

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014283925

NSN

5961-01-428-3925

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FE1D

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014283925

NSN

5961-01-428-3925

MFG

GENERAL SEMICONDUCTOR INC

Description

FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES NOMINAL
OVERALL LENGTH: 0.240 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.034 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE