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5961-01-415-2468
20 Products
SEN-B-306-506B
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014152468
NSN
5961-01-415-2468
SEN-B-306-506B
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014152468
NSN
5961-01-415-2468
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 REVERSE VOLTAGE, INSTANTANEOUS
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
TERMINAL TYPE AND QUANTITY: 5 TAB, SOLDER LUG
Related Searches:
SA10855
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014152468
NSN
5961-01-415-2468
SA10855
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014152468
NSN
5961-01-415-2468
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 REVERSE VOLTAGE, INSTANTANEOUS
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
TERMINAL TYPE AND QUANTITY: 5 TAB, SOLDER LUG
Related Searches:
3153881-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014152501
NSN
5961-01-415-2501
MFG
RAYTHEON COMPANY
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: F-16
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.655 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
3153885-1
TRANSISTOR
NSN, MFG P/N
5961014152502
NSN
5961-01-415-2502
MFG
RAYTHEON COMPANY
Description
III END ITEM IDENTIFICATION: F-16
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.825 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
IRKH26-08
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014153107
NSN
5961-01-415-3107
IRKH26-08
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014153107
NSN
5961-01-415-3107
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE SINGLE SEMICONDUCTOR DEVICE THYRISTOR
Related Searches:
VN50300L
TRANSISTOR
NSN, MFG P/N
5961014153726
NSN
5961-01-415-3726
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
TRANSISTOR
Related Searches:
SD1379-8
TRANSISTOR
NSN, MFG P/N
5961014153871
NSN
5961-01-415-3871
MFG
STMICROELECTRONICS INC
Description
TRANSISTOR
Related Searches:
478801-161
TRANSISTOR
NSN, MFG P/N
5961014153879
NSN
5961-01-415-3879
MFG
DUCOMMUN TECHNOLOGIES INC. DBA AMERICAN ELECTRONICS
Description
TRANSISTOR
Related Searches:
JANTXV1N4115
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014153903
NSN
5961-01-415-3903
JANTXV1N4115
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014153903
NSN
5961-01-415-3903
MFG
COMPENSATED DEVICES INC
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
OVERALL DIAMETER: 0.670 INCHES MAXIMUM
OVERALL LENGTH: 0.146 INCHES MAXIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1406-23
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014153965
NSN
5961-01-415-3965
MFG
BOEING COMPANY THE DIV DEFENSE SPACE & SECURITY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
7907952-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014154082
NSN
5961-01-415-4082
7907952-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014154082
NSN
5961-01-415-4082
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
SPDX5817
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014154082
NSN
5961-01-415-4082
MFG
SOLID STATE DEVICES INC.
Description
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
940-22477-S78
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014154091
NSN
5961-01-415-4091
940-22477-S78
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014154091
NSN
5961-01-415-4091
MFG
POWER PARAGON INC DBA POWER SYSTEMS GROUP DIV POWER SYSTEMS GROUP
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
S6A3100FR S
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014154091
NSN
5961-01-415-4091
S6A3100FR S
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014154091
NSN
5961-01-415-4091
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
SDA403GF
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014154091
NSN
5961-01-415-4091
SDA403GF
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014154091
NSN
5961-01-415-4091
MFG
SOLID STATE DEVICES INC.
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
1216947-202
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014154304
NSN
5961-01-415-4304
1216947-202
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014154304
NSN
5961-01-415-4304
MFG
LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS
Description
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEADS 99.99PCT AND HOLDER PLATED GOLD
INCLOSURE MATERIAL: METAL AND GLASS
MANUFACTURERS CODE: 03538
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MFR SOURCE CONTROLLING REFERENCE: 1216947-202
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.130 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
OVERALL WIDTH: 0.060 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: O/A DIMENSIONS INCLUDE HOLDER BUT NOT LEADS; JUNCTION PATTERN ARRANGEMENT: PIN; FIELD FORCE EFFECT TYPE: ELECTROSTATIC CHARGE
TERMINAL LENGTH: 0.115 INCHES MINIMUM AND 0.135 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 RIBBON
TEST DATA DOCUMENT: 56232-1216947 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
MA4P951-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014154304
NSN
5961-01-415-4304
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEADS 99.99PCT AND HOLDER PLATED GOLD
INCLOSURE MATERIAL: METAL AND GLASS
MANUFACTURERS CODE: 03538
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MFR SOURCE CONTROLLING REFERENCE: 1216947-202
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.130 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
OVERALL WIDTH: 0.060 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: O/A DIMENSIONS INCLUDE HOLDER BUT NOT LEADS; JUNCTION PATTERN ARRANGEMENT: PIN; FIELD FORCE EFFECT TYPE: ELECTROSTATIC CHARGE
TERMINAL LENGTH: 0.115 INCHES MINIMUM AND 0.135 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 RIBBON
TEST DATA DOCUMENT: 56232-1216947 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
G200786-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014154306
NSN
5961-01-415-4306
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 70.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.160 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 49956-G200786 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.25 MAXIMUM FORWARD VOLTAGE, DC AND 300.00 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
UTG4058
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014154306
NSN
5961-01-415-4306
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 70.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.160 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 49956-G200786 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.25 MAXIMUM FORWARD VOLTAGE, DC AND 300.00 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
FRL130D
TRANSISTOR
NSN, MFG P/N
5961014154326
NSN
5961-01-415-4326
MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: RADIATION HARDENED
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-205AF
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 34371-FRL130D MANUFACTURERS SPECIFICATION
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 100.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
