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5961-01-369-6938
20 Products
8811-3778-1
TRANSISTOR
NSN, MFG P/N
5961013696938
NSN
5961-01-369-6938
MFG
DRS ICAS, LLC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
INTERNAL CONFIGURATION: FIELD EFFECT
Related Searches:
G405241-1
TRANSISTOR
NSN, MFG P/N
5961013696009
NSN
5961-01-369-6009
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: EAPON SYS PROCESSOR
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 3B150
MFR SOURCE CONTROLLING REFERENCE: G405241-1
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: HARDNESS CRITICAL ITEM
Related Searches:
SG4240
TRANSISTOR
NSN, MFG P/N
5961013696009
NSN
5961-01-369-6009
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: EAPON SYS PROCESSOR
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 3B150
MFR SOURCE CONTROLLING REFERENCE: G405241-1
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: HARDNESS CRITICAL ITEM
Related Searches:
FSA3260M
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013696010
NSN
5961-01-369-6010
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: EAPON SYS PROCESSOR
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 3B150
MFR SOURCE CONTROLLING REFERENCE: G405213-1
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: HARDNESS CRITICAL ITEM
Related Searches:
G405213
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013696010
NSN
5961-01-369-6010
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: EAPON SYS PROCESSOR
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 3B150
MFR SOURCE CONTROLLING REFERENCE: G405213-1
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: HARDNESS CRITICAL ITEM
Related Searches:
G405213-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013696010
NSN
5961-01-369-6010
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: EAPON SYS PROCESSOR
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 3B150
MFR SOURCE CONTROLLING REFERENCE: G405213-1
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: HARDNESS CRITICAL ITEM
Related Searches:
412844-1
TRANSISTOR
NSN, MFG P/N
5961013696482
NSN
5961-01-369-6482
MFG
TARGET CORPORATION DBA TARGET
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.215 INCHES MAXIMUM
OVERALL LENGTH: 0.900 INCHES NOMINAL
OVERALL WIDTH: 0.800 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 50.0 WATTS NOMINAL POWER OUTPUT
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
TRANSFER RATIO: 20.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 MINIMUM COLLECTOR SUPPLY VOLTAGE AND 50.0 MAXIMUM COLLECTOR SUPPLY VOLTAGE
Related Searches:
480-019-6259
TRANSISTOR
NSN, MFG P/N
5961013696483
NSN
5961-01-369-6483
MFG
SPRAGUE ELECTRIC CO WORLD HQS
Description
INCLOSURE MATERIAL: METAL
OVERALL DIAMETER: 0.375 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
Related Searches:
480-090-3904
TRANSISTOR
NSN, MFG P/N
5961013696484
NSN
5961-01-369-6484
MFG
AYDIN DISPLAYS INC.
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.188 INCHES NOMINAL
Related Searches:
480-109-5007
TRANSISTOR
NSN, MFG P/N
5961013696485
NSN
5961-01-369-6485
MFG
AYDIN DISPLAYS INC.
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
Related Searches:
80076-8
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013696486
NSN
5961-01-369-6486
80076-8
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013696486
NSN
5961-01-369-6486
MFG
EDO CORPORATION DIV DEFENSE SYSTEMS
Description
COMPONENT NAME AND QUANTITY: 20 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.325 INCHES MAXIMUM
OVERALL LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 450.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 NOMINAL BREAKDOWN VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR
Related Searches:
HM-1-0410-80898-008
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013696486
NSN
5961-01-369-6486
HM-1-0410-80898-008
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013696486
NSN
5961-01-369-6486
MFG
INTERSIL CORPORATION
Description
COMPONENT NAME AND QUANTITY: 20 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.325 INCHES MAXIMUM
OVERALL LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 450.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 NOMINAL BREAKDOWN VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR
Related Searches:
711327-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013696764
NSN
5961-01-369-6764
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION DIV CUSTOMER SERVICES
Description
III END ITEM IDENTIFICATION: PACER SPECIAL
Related Searches:
1216983-201
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013696765
NSN
5961-01-369-6765
1216983-201
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013696765
NSN
5961-01-369-6765
MFG
LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 NANOAMPERES NOMINAL REVERSE CURRENT, DC
FEATURES PROVIDED: BURN IN
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.010 INCHES MINIMUM AND 0.014 INCHES MAXIMUM
OVERALL LENGTH: 0.030 INCHES MINIMUM AND 0.035 INCHES MAXIMUM
OVERALL WIDTH: 0.030 INCHES MINIMUM AND 0.035 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.160 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 NOMINAL BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
MA4P908
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013696765
NSN
5961-01-369-6765
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 NANOAMPERES NOMINAL REVERSE CURRENT, DC
FEATURES PROVIDED: BURN IN
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.010 INCHES MINIMUM AND 0.014 INCHES MAXIMUM
OVERALL LENGTH: 0.030 INCHES MINIMUM AND 0.035 INCHES MAXIMUM
OVERALL WIDTH: 0.030 INCHES MINIMUM AND 0.035 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.160 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 NOMINAL BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
UX4P908
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013696765
NSN
5961-01-369-6765
MFG
SEMI-GENERAL INC .
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 NANOAMPERES NOMINAL REVERSE CURRENT, DC
FEATURES PROVIDED: BURN IN
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.010 INCHES MINIMUM AND 0.014 INCHES MAXIMUM
OVERALL LENGTH: 0.030 INCHES MINIMUM AND 0.035 INCHES MAXIMUM
OVERALL WIDTH: 0.030 INCHES MINIMUM AND 0.035 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.160 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 NOMINAL BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
80076-10
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013696766
NSN
5961-01-369-6766
80076-10
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013696766
NSN
5961-01-369-6766
MFG
EDO CORPORATION DIV DEFENSE SYSTEMS
Description
COMPONENT NAME AND QUANTITY: 32 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.325 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 450.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 NOMINAL BREAKDOWN VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
HM-1-0410-80898-0010
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013696766
NSN
5961-01-369-6766
HM-1-0410-80898-0010
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013696766
NSN
5961-01-369-6766
MFG
INTERSIL CORPORATION
Description
COMPONENT NAME AND QUANTITY: 32 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.325 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 450.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 NOMINAL BREAKDOWN VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
80076-13
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013696769
NSN
5961-01-369-6769
80076-13
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013696769
NSN
5961-01-369-6769
MFG
EDO CORPORATION DIV DEFENSE SYSTEMS
Description
COMPONENT NAME AND QUANTITY: 35 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.325 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 450.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 NOMINAL BREAKDOWN VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
HM-1-0410-80898-0013
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013696769
NSN
5961-01-369-6769
HM-1-0410-80898-0013
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013696769
NSN
5961-01-369-6769
MFG
INTERSIL CORPORATION
Description
COMPONENT NAME AND QUANTITY: 35 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.325 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 450.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 NOMINAL BREAKDOWN VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR DEVICE DIODE
