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5961-01-273-3052
20 Products
FDH5166
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012733052
NSN
5961-01-273-3052
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
JANTX1N3993RA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012733053
NSN
5961-01-273-3053
JANTX1N3993RA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012733053
NSN
5961-01-273-3053
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 640.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 2.44 AMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3993RA
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/124
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/124 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.9 NOMINAL NOMINAL REGULATOR VOLTAGE
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ID102
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012733054
NSN
5961-01-273-3054
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM REPETITIVE PEAK ON-STATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL CIRCLE DIAMETER: 0.110 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
143318020
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012733159
NSN
5961-01-273-3159
143318020
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012733159
NSN
5961-01-273-3159
MFG
EATON CORPORATION
Description
SEMICONDUCTOR DEVICE,THYRISTOR
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151RL120T66
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012733159
NSN
5961-01-273-3159
151RL120T66
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012733159
NSN
5961-01-273-3159
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
SEMICONDUCTOR DEVICE,THYRISTOR
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17612GYB
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012733159
NSN
5961-01-273-3159
17612GYB
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012733159
NSN
5961-01-273-3159
MFG
SIEMENS COMPONENTS INC INTEGRATED CIRCUIT DIV
Description
SEMICONDUCTOR DEVICE,THYRISTOR
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T607121514FN
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012733159
NSN
5961-01-273-3159
T607121514FN
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012733159
NSN
5961-01-273-3159
MFG
POWEREX INC
Description
SEMICONDUCTOR DEVICE,THYRISTOR
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2902746-6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012733507
NSN
5961-01-273-3507
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.120 INCHES MAXIMUM
OVERALL LENGTH: 0.420 INCHES MAXIMUM
OVERALL WIDTH: 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM REVERSE VOLTAGE, PEAK
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5082-3170
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012733507
NSN
5961-01-273-3507
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.120 INCHES MAXIMUM
OVERALL LENGTH: 0.420 INCHES MAXIMUM
OVERALL WIDTH: 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
2711863-7
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012733903
NSN
5961-01-273-3903
2711863-7
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012733903
NSN
5961-01-273-3903
MFG
ALLIED DEFENSE INDUSTRIES INC
Description
RECTIFIER,SEMICONDUCTOR DEVICE
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DMS 91111B
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012733903
NSN
5961-01-273-3903
DMS 91111B
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012733903
NSN
5961-01-273-3903
MFG
DLA LAND AND MARITIME
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
2SA762-22
TRANSISTOR
NSN, MFG P/N
5961012733977
NSN
5961-01-273-3977
MFG
SONY ELECTRONICS INC
Description
TRANSISTOR
Related Searches:
8-760-222-01
TRANSISTOR
NSN, MFG P/N
5961012733977
NSN
5961-01-273-3977
MFG
GREEN TELE-RADIO DISTRIBUTORS INC
Description
TRANSISTOR
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196SET245
TRANSISTOR
NSN, MFG P/N
5961012733978
NSN
5961-01-273-3978
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.562 INCHES MINIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.312 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MINIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 80.0 MINIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 10.0 MINIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 2.2 MAXIMUM BASE TO EMITTER SATURATION VOLTAGE
~1: AND 1.0 MAXIMUM COLLECTOR TO EMITTER SATURATION VOLTAGE
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5616407
TRANSISTOR
NSN, MFG P/N
5961012733978
NSN
5961-01-273-3978
MFG
NAVAL SEA SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.562 INCHES MINIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.312 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MINIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 80.0 MINIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 10.0 MINIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 2.2 MAXIMUM BASE TO EMITTER SATURATION VOLTAGE
~1: AND 1.0 MAXIMUM COLLECTOR TO EMITTER SATURATION VOLTAGE
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635
TRANSISTOR
NSN, MFG P/N
5961012733978
NSN
5961-01-273-3978
MFG
MICROSEMI CORP POWER TECHNOLOGY COMPONENTS
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.562 INCHES MINIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.312 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MINIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 80.0 MINIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 10.0 MINIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 2.2 MAXIMUM BASE TO EMITTER SATURATION VOLTAGE
~1: AND 1.0 MAXIMUM COLLECTOR TO EMITTER SATURATION VOLTAGE
Related Searches:
A3311
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012733979
NSN
5961-01-273-3979
MFG
TECHNICAL SERVICES LABORATORY INC DBA TSL-REICO
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.050 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
OVERALL LENGTH: 0.135 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
A390
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012733980
NSN
5961-01-273-3980
MFG
PAYNE ENGINEERING COMPANY
Description
SEMICONDUCTOR DEVICE,DIODE
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T600101802BT002S00
TRANSISTOR
NSN, MFG P/N
5961012733981
NSN
5961-01-273-3981
MFG
POWEREX INC
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM GATE TRIGGER CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-93
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 4.702 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.231 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 INSULATED WIRE LEAD W/TERMINAL LUG AND 2 UNINSULATED WIRE LEAD W/TERMINAL LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1600.0 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
C380
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012734016
NSN
5961-01-273-4016
MFG
PAYNE ENGINEERING COMPANY
Description
SEMICONDUCTOR DEVICE,THYRISTOR
