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5961-01-339-7095

20 Products

48-869322

TRANSISTOR

NSN, MFG P/N

5961013397095

NSN

5961-01-339-7095

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48-869322

TRANSISTOR

NSN, MFG P/N

5961013397095

NSN

5961-01-339-7095

MFG

MOTOROLA COMMUNICATIONS GROUP PARTS DEPT DIV OF MOTOROLA INC

2N5810

TRANSISTOR

NSN, MFG P/N

5961013395380

NSN

5961-01-339-5380

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2N5810

TRANSISTOR

NSN, MFG P/N

5961013395380

NSN

5961-01-339-5380

MFG

CENTRAL SEMICONDUCTOR CORP DIV CENTRAL STATE INDUSTRIES INC

2N3628

TRANSISTOR

NSN, MFG P/N

5961013395381

NSN

5961-01-339-5381

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2N3628

TRANSISTOR

NSN, MFG P/N

5961013395381

NSN

5961-01-339-5381

MFG

CRIMSON SEMICONDUCTOR INC

925970-2B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013395382

NSN

5961-01-339-5382

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925970-2B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013395382

NSN

5961-01-339-5382

MFG

RAYTHEON COMPANY

A02757

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013395382

NSN

5961-01-339-5382

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A02757

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013395382

NSN

5961-01-339-5382

MFG

MBDA UK LTD

925969-2B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013395383

NSN

5961-01-339-5383

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925969-2B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013395383

NSN

5961-01-339-5383

MFG

RAYTHEON COMPANY

A02756

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013395383

NSN

5961-01-339-5383

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A02756

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013395383

NSN

5961-01-339-5383

MFG

MBDA UK LTD

150K100A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013395466

NSN

5961-01-339-5466

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150K100A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013395466

NSN

5961-01-339-5466

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 UNINSULATED WIRE LEAD W/TERMINAL LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE AND 1.5 NOMINAL FORWARD VOLTAGE, PEAK

D50-0006-006

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013395467

NSN

5961-01-339-5467

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D50-0006-006

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013395467

NSN

5961-01-339-5467

MFG

HARRIS CORPORATION DBA HARRIS RF COMMUNICATION

Description

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
OVERALL LENGTH: 2.240 INCHES MINIMUM

SA12C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013395467

NSN

5961-01-339-5467

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SA12C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013395467

NSN

5961-01-339-5467

MFG

PROTEK DEVICES LP DBA PROTEK DEVICES

Description

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
OVERALL LENGTH: 2.240 INCHES MINIMUM

ECG5181AK

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013395468

NSN

5961-01-339-5468

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ECG5181AK

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013395468

NSN

5961-01-339-5468

MFG

PHILIPS ECG INC DIV OF NORTH AMERICAN PHILIPS CORP

Description

OVERALL LENGTH: 1.253 INCHES MAXIMUM
TERMINAL LENGTH: 0.395 INCHES MAXIMUM

2807B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013395583

NSN

5961-01-339-5583

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2807B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013395583

NSN

5961-01-339-5583

MFG

MICROSEMI CORPORATION

1003705

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013395611

NSN

5961-01-339-5611

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1003705

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013395611

NSN

5961-01-339-5611

MFG

TLD ACE CORPORATION

Description

III END ITEM IDENTIFICATION: HYDRONIC FLOW TESTER P/N 00365/ACE-770-B101

8634919-01

TRANSISTOR

NSN, MFG P/N

5961013396143

NSN

5961-01-339-6143

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8634919-01

TRANSISTOR

NSN, MFG P/N

5961013396143

NSN

5961-01-339-6143

MFG

OGDEN AIR LOGISTICS CENTER

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 600.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: HCI; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.190 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 70.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

142314-0001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013396775

NSN

5961-01-339-6775

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142314-0001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013396775

NSN

5961-01-339-6775

MFG

NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION

Description

CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TXV
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.119 INCHES MINIMUM AND 0.127 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM; JUNCTION PATTERN ARRANGEMENT: PIN
TERMINAL TYPE AND QUANTITY: 2 FERRULE

DP101876-301

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013396775

NSN

5961-01-339-6775

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DP101876-301

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013396775

NSN

5961-01-339-6775

MFG

SDI INC

Description

CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TXV
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.119 INCHES MINIMUM AND 0.127 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM; JUNCTION PATTERN ARRANGEMENT: PIN
TERMINAL TYPE AND QUANTITY: 2 FERRULE

MA4P315

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013396775

NSN

5961-01-339-6775

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MA4P315

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013396775

NSN

5961-01-339-6775

MFG

M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM

Description

CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TXV
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.119 INCHES MINIMUM AND 0.127 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM; JUNCTION PATTERN ARRANGEMENT: PIN
TERMINAL TYPE AND QUANTITY: 2 FERRULE

NH142314-0001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013396775

NSN

5961-01-339-6775

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NH142314-0001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013396775

NSN

5961-01-339-6775

MFG

DLA LAND AND MARITIME

Description

CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TXV
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.119 INCHES MINIMUM AND 0.127 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM; JUNCTION PATTERN ARRANGEMENT: PIN
TERMINAL TYPE AND QUANTITY: 2 FERRULE

10DC2

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013397046

NSN

5961-01-339-7046

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10DC2

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013397046

NSN

5961-01-339-7046

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

10DC2R

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013397047

NSN

5961-01-339-7047

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10DC2R

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013397047

NSN

5961-01-339-7047

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.