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5961-01-344-1713
20 Products
3E4840-09-0002
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013441713
NSN
5961-01-344-1713
3E4840-09-0002
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013441713
NSN
5961-01-344-1713
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
III END ITEM IDENTIFICATION: F-16 ACFT
Related Searches:
20-01257-001
TRANSISTOR
NSN, MFG P/N
5961013439872
NSN
5961-01-343-9872
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
III END ITEM IDENTIFICATION: 00724//01-01422-001 MEDIUM POWER AMPLIFIER SYSTEM
Related Searches:
20-01243-001
TRANSISTOR
NSN, MFG P/N
5961013439873
NSN
5961-01-343-9873
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
III END ITEM IDENTIFICATION: 00724//01-01422-001 MEDIUM POWER AMPLIFIER SYSTEM
SPECIAL FEATURES: ITEM CALLED SEMICONDUCTOR QDSP8829
Related Searches:
20-01187-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013439874
NSN
5961-01-343-9874
20-01187-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013439874
NSN
5961-01-343-9874
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
III END ITEM IDENTIFICATION: 00724//01-01422-001 MEDIUM POWER AMPLIFIER SYSTEM
Related Searches:
33339-1-15
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013440416
NSN
5961-01-344-0416
33339-1-15
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013440416
NSN
5961-01-344-0416
MFG
CADILLAC GAGE TEXTRON INC.
Description
DESIGN CONTROL REFERENCE: 33339-1-15
III END ITEM IDENTIFICATION: M1,XM1 TANK
MANUFACTURERS CODE: 10237
OVERALL LENGTH: 0.425 INCHES NOMINAL
THE MANUFACTURERS DATA:
Related Searches:
0N081810
TRANSISTOR
NSN, MFG P/N
5961013440704
NSN
5961-01-344-0704
MFG
NATIONAL SECURITY AGENCY
Description
DESIGN CONTROL REFERENCE: 0N081810
III END ITEM IDENTIFICATION: PROJECT BEAMHOUSE
MANUFACTURERS CODE: 98230
THE MANUFACTURERS DATA:
Related Searches:
8507002-130
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013440958
NSN
5961-01-344-0958
8507002-130
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013440958
NSN
5961-01-344-0958
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 164.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK AND 41.00 AMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
POWER RATING PER CHARACTERISTIC: 400.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR
Related Searches:
MOD500B
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013440958
NSN
5961-01-344-0958
MOD500B
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013440958
NSN
5961-01-344-0958
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 164.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK AND 41.00 AMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
POWER RATING PER CHARACTERISTIC: 400.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR
Related Searches:
HMF0602
TRANSISTOR
NSN, MFG P/N
5961013441464
NSN
5961-01-344-1464
MFG
HARRIS MICROWAVE SEMICONDUCTOR INC SUB OF HARRIS CORP
Description
TRANSISTOR
Related Searches:
2047491
TRANSISTOR
NSN, MFG P/N
5961013441465
NSN
5961-01-344-1465
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
TRANSISTOR
Related Searches:
SP35078
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013441466
NSN
5961-01-344-1466
MFG
CADILLAC GAGE TEXTRON INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
2N6071A
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013441494
NSN
5961-01-344-1494
2N6071A
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013441494
NSN
5961-01-344-1494
MFG
CRIMSON SEMICONDUCTOR INC
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
5E4850/01-0001
TRANSISTOR
NSN, MFG P/N
5961013441703
NSN
5961-01-344-1703
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
III END ITEM IDENTIFICATION: F-16 ACFT
Related Searches:
5E4850/04-0001
TRANSISTOR
NSN, MFG P/N
5961013441704
NSN
5961-01-344-1704
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
III END ITEM IDENTIFICATION: F-16 ACFT
Related Searches:
5E4850/05-0003
TRANSISTOR
NSN, MFG P/N
5961013441705
NSN
5961-01-344-1705
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
III END ITEM IDENTIFICATION: F-16 ACFT
Related Searches:
4E4820-03-0023
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013441706
NSN
5961-01-344-1706
4E4820-03-0023
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013441706
NSN
5961-01-344-1706
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
III END ITEM IDENTIFICATION: F-16 ACFT
Related Searches:
5E4810/51-0002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013441707
NSN
5961-01-344-1707
5E4810/51-0002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013441707
NSN
5961-01-344-1707
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
III END ITEM IDENTIFICATION: F-16 ACFT
Related Searches:
ED741568-06
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013441708
NSN
5961-01-344-1708
ED741568-06
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013441708
NSN
5961-01-344-1708
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
III END ITEM IDENTIFICATION: F-16 ACFT
Related Searches:
013-00197
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013441711
NSN
5961-01-344-1711
MFG
POWER PARAGON INC DBA POWER SYSTEMS GROUP DIV POWER SYSTEMS GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 11.60 AMPERES NOMINAL PEAK PULSE CURRENT
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TURRET
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 835.0 NOMINAL BREAKDOWN VOLTAGE, DC
Related Searches:
PHP500
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013441711
NSN
5961-01-344-1711
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 11.60 AMPERES NOMINAL PEAK PULSE CURRENT
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TURRET
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 835.0 NOMINAL BREAKDOWN VOLTAGE, DC
