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5961-01-320-0517
20 Products
JANTX2N2324AS
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013200517
NSN
5961-01-320-0517
JANTX2N2324AS
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013200517
NSN
5961-01-320-0517
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N2324AS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500-276
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/276 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.00 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
87A0092-1
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961013200961
NSN
5961-01-320-0961
MFG
SIGNAL TECHNOLOGY CORPORATION
Description
SEMICONDUCTOR DEVICE SET
Related Searches:
JANTX2N6547
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961013200961
NSN
5961-01-320-0961
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
SEMICONDUCTOR DEVICE SET
Related Searches:
707330-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013201496
NSN
5961-01-320-1496
MFG
CONTRAVES INC
Description
III END ITEM IDENTIFICATION: MIRROR CONTROL
Related Searches:
168569-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013201826
NSN
5961-01-320-1826
MFG
GE AVIATION SYSTEMS LLC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
167900-05
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013201827
NSN
5961-01-320-1827
MFG
GE AVIATION SYSTEMS LLC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
966049
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013202437
NSN
5961-01-320-2437
MFG
SABB-AMERICA EAST INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
967051
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013203485
NSN
5961-01-320-3485
MFG
SABB-AMERICA EAST INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
967063
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013203485
NSN
5961-01-320-3485
MFG
SURVIVAL SYSTEMS INTERNATIONAL INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1127011131
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013203529
NSN
5961-01-320-3529
1127011131
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013203529
NSN
5961-01-320-3529
MFG
BOSCH ROBERT CORP
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
A186197
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013203529
NSN
5961-01-320-3529
A186197
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013203529
NSN
5961-01-320-3529
MFG
CNH AMERICA LLC
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
13080409-11
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013203621
NSN
5961-01-320-3621
13080409-11
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013203621
NSN
5961-01-320-3621
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN
Description
CURRENT RATING PER CHARACTERISTIC: 350.00 MICROAMPERES MAXIMUM GATE TRIGGER CURRENT, DC AND 0.22 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 1.0 MAXIMUM GATE TRIGGER VOLTAGE, DC
Related Searches:
JANTX2N2326A
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013203621
NSN
5961-01-320-3621
JANTX2N2326A
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013203621
NSN
5961-01-320-3621
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 350.00 MICROAMPERES MAXIMUM GATE TRIGGER CURRENT, DC AND 0.22 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 1.0 MAXIMUM GATE TRIGGER VOLTAGE, DC
Related Searches:
STX409-11
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013203621
NSN
5961-01-320-3621
STX409-11
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013203621
NSN
5961-01-320-3621
MFG
SOLID STATE DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 350.00 MICROAMPERES MAXIMUM GATE TRIGGER CURRENT, DC AND 0.22 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 1.0 MAXIMUM GATE TRIGGER VOLTAGE, DC
Related Searches:
352-5511-010
TRANSISTOR
NSN, MFG P/N
5961013204415
NSN
5961-01-320-4415
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
III END ITEM IDENTIFICATION: 5826-01-314-9992
Related Searches:
VSK63
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013204416
NSN
5961-01-320-4416
MFG
MICRO QUALITY SEMICONDUCTOR INC SUB OF MICROSEMI CORP
Description
CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.605 INCHES MAXIMUM
OVERALL WIDTH: 0.415 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.552 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
707968
TRANSISTOR
NSN, MFG P/N
5961013205780
NSN
5961-01-320-5780
MFG
FLUKE CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
OVERALL WIDTH: 0.186 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 10.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
J2655-TR3
TRANSISTOR
NSN, MFG P/N
5961013205780
NSN
5961-01-320-5780
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
OVERALL WIDTH: 0.186 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 10.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
1.5KE180A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013206287
NSN
5961-01-320-6287
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 6.10 AMPERES MAXIMUM PEAK PULSE CURRENT
INCLOSURE MATERIAL: PLASTIC
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 NOMINAL REVERSE VOLTAGE, TOTAL RMS
Related Searches:
1.5KE180CA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013206287
NSN
5961-01-320-6287
1.5KE180CA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013206287
NSN
5961-01-320-6287
MFG
GENERAL SEMICONDUCTOR INDUSTRIES INC
Description
CURRENT RATING PER CHARACTERISTIC: 6.10 AMPERES MAXIMUM PEAK PULSE CURRENT
INCLOSURE MATERIAL: PLASTIC
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 NOMINAL REVERSE VOLTAGE, TOTAL RMS
