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5961-01-276-6202
20 Products
2N3792 JAN
TRANSISTOR
NSN, MFG P/N
5961012766202
NSN
5961-01-276-6202
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
TRANSISTOR
Related Searches:
VA1105
TRANSISTOR
NSN, MFG P/N
5961012765536
NSN
5961-01-276-5536
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
TRANSISTOR
Related Searches:
NDP329
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012765537
NSN
5961-01-276-5537
MFG
MICRO USPD INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1A4856-19
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012765642
NSN
5961-01-276-5642
MFG
GE AVIATIONS SYSTEMS LLC DBA GE AVIATION DIV ELECTRICAL POWER-POMPANO
Description
CURRENT RATING PER CHARACTERISTIC: 210.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT AND 20.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: MOUNTING HARDWARE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.112 INCHES
OVERALL DIAMETER: 0.180 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MINIMUM AND 0.710 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 SOLDER STUD
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 38.0 MINIMUM NOMINAL REGULATOR VOLTAGE AND 42.0 MAXIMUM NOMINAL REGULATOR VOLTAGE AND 32.7 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
2905073-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012765642
NSN
5961-01-276-5642
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
CURRENT RATING PER CHARACTERISTIC: 210.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT AND 20.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: MOUNTING HARDWARE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.112 INCHES
OVERALL DIAMETER: 0.180 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MINIMUM AND 0.710 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 SOLDER STUD
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 38.0 MINIMUM NOMINAL REGULATOR VOLTAGE AND 42.0 MAXIMUM NOMINAL REGULATOR VOLTAGE AND 32.7 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
SZ7739
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012765642
NSN
5961-01-276-5642
MFG
SOLID STATE DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 210.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT AND 20.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: MOUNTING HARDWARE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.112 INCHES
OVERALL DIAMETER: 0.180 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MINIMUM AND 0.710 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 SOLDER STUD
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 38.0 MINIMUM NOMINAL REGULATOR VOLTAGE AND 42.0 MAXIMUM NOMINAL REGULATOR VOLTAGE AND 32.7 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
UZ7740
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012765642
NSN
5961-01-276-5642
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 210.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT AND 20.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: MOUNTING HARDWARE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.112 INCHES
OVERALL DIAMETER: 0.180 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MINIMUM AND 0.710 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 SOLDER STUD
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 38.0 MINIMUM NOMINAL REGULATOR VOLTAGE AND 42.0 MAXIMUM NOMINAL REGULATOR VOLTAGE AND 32.7 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
6097049-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012765674
NSN
5961-01-276-5674
6097049-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012765674
NSN
5961-01-276-5674
MFG
LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS
Description
SPECIAL FEATURES: FULL WAVE BRIDGE-3 PHASE;5 LEAD TERMINALS;2.240 IN. MIN TO 2.260 IN. MAX OVER ALL LG;0.820 IN. MAX H;0.740 IN. TO 0.760 IN. MAX W;TWO 0.164 IN. MIN TO 0.174 IN. MAX DIA MTG HOLES SPACED 1.870 IN. MIN TO 1.880 IN. MAX C TO C;600.0 PEAK INVERSE VOLTAGE EACH
~1: DIODE;10.0 MICRO AMPS MAX REVERSE CURRENT;M65.0 TO P150.0 DEG C OPERATING TEMP
Related Searches:
655-442
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012765674
NSN
5961-01-276-5674
655-442
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012765674
NSN
5961-01-276-5674
MFG
MICRO USPD INC
Description
SPECIAL FEATURES: FULL WAVE BRIDGE-3 PHASE;5 LEAD TERMINALS;2.240 IN. MIN TO 2.260 IN. MAX OVER ALL LG;0.820 IN. MAX H;0.740 IN. TO 0.760 IN. MAX W;TWO 0.164 IN. MIN TO 0.174 IN. MAX DIA MTG HOLES SPACED 1.870 IN. MIN TO 1.880 IN. MAX C TO C;600.0 PEAK INVERSE VOLTAGE EACH
~1: DIODE;10.0 MICRO AMPS MAX REVERSE CURRENT;M65.0 TO P150.0 DEG C OPERATING TEMP
Related Searches:
6749W10P002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012766027
NSN
5961-01-276-6027
6749W10P002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012766027
NSN
5961-01-276-6027
MFG
AMETEK INC. D IV AEROSPACE & DEFENSE
Description
CURRENT RATING PER CHARACTERISTIC: 7.50 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TXV
INCLOSURE MATERIAL: GLASS OR PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.9 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS AND 6.5 MAXIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
6749W10P003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012766028
NSN
5961-01-276-6028
6749W10P003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012766028
NSN
5961-01-276-6028
MFG
AMETEK INC. D IV AEROSPACE & DEFENSE
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TXV
INCLOSURE MATERIAL: GLASS OR PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL WORKING PEAK REVERSE VOLTAGE
Related Searches:
6749W10P007
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012766029
NSN
5961-01-276-6029
6749W10P007
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012766029
NSN
5961-01-276-6029
MFG
AMETEK INC. D IV AEROSPACE & DEFENSE
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TXV
INCLOSURE MATERIAL: GLASS OR PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS AND 6.7 MAXIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
6749W10P008
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012766030
NSN
5961-01-276-6030
6749W10P008
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012766030
NSN
5961-01-276-6030
MFG
AMETEK INC. D IV AEROSPACE & DEFENSE
Description
CURRENT RATING PER CHARACTERISTIC: 7.50 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TXV
INCLOSURE MATERIAL: GLASS OR PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.5 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS AND 9.4 MAXIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
6749W10P009
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012766031
NSN
5961-01-276-6031
6749W10P009
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012766031
NSN
5961-01-276-6031
MFG
AMETEK INC. D IV AEROSPACE & DEFENSE
Description
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TXV
INCLOSURE MATERIAL: GLASS OR PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS NOMINAL NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 NOMINAL REGULATOR VOLTAGE, DC
Related Searches:
6749W10P010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012766032
NSN
5961-01-276-6032
6749W10P010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012766032
NSN
5961-01-276-6032
MFG
AMETEK INC. D IV AEROSPACE & DEFENSE
Description
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TXV
INCLOSURE MATERIAL: GLASS OR PLASTIC OR CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS NOMINAL NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 NOMINAL REGULATOR VOLTAGE, DC
Related Searches:
JANTXV-1N974B1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012766032
NSN
5961-01-276-6032
JANTXV-1N974B1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012766032
NSN
5961-01-276-6032
MFG
TESTING LAB OF NORTH AMERICA INC
Description
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TXV
INCLOSURE MATERIAL: GLASS OR PLASTIC OR CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS NOMINAL NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 NOMINAL REGULATOR VOLTAGE, DC
Related Searches:
305-521-4
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012766173
NSN
5961-01-276-6173
305-521-4
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012766173
NSN
5961-01-276-6173
MFG
AUTOMATIC SWITCH COMPANY
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
1978067-101
TRANSISTOR
NSN, MFG P/N
5961012766201
NSN
5961-01-276-6201
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION
Description
INCLOSURE MATERIAL: CERAMIC OR METAL OR PLASTIC
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
500023
TRANSISTOR
NSN, MFG P/N
5961012766201
NSN
5961-01-276-6201
MFG
DONALDSON COMPANY INC.
Description
INCLOSURE MATERIAL: CERAMIC OR METAL OR PLASTIC
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
195142 PIECE 5
TRANSISTOR
NSN, MFG P/N
5961012766202
NSN
5961-01-276-6202
MFG
SSI TECHNOLOGY INC.
Description
TRANSISTOR
