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5961-01-269-9066
20 Products
153-0597-01
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961012699066
NSN
5961-01-269-9066
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR DEVICE SET
Related Searches:
PC71626-1
TRANSISTOR
NSN, MFG P/N
5961012695343
NSN
5961-01-269-5343
MFG
ROCKWELL COLLINS AEROSPACE & ELECTRONICS INC. DBA RC DISPLAYS SYSTEMS
Description
III END ITEM IDENTIFICATION: B-15 ACFT
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 09344
MFR SOURCE CONTROLLING REFERENCE: PC71626-1
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.370 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
STX626
TRANSISTOR
NSN, MFG P/N
5961012695343
NSN
5961-01-269-5343
MFG
SOLID STATE DEVICES INC.
Description
III END ITEM IDENTIFICATION: B-15 ACFT
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 09344
MFR SOURCE CONTROLLING REFERENCE: PC71626-1
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.370 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
SM-A-876448
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012695529
NSN
5961-01-269-5529
SM-A-876448
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012695529
NSN
5961-01-269-5529
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 800.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 80063-SM-A-876448 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
UES601
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012695529
NSN
5961-01-269-5529
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 800.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 80063-SM-A-876448 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
5082-8273
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012695796
NSN
5961-01-269-5796
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
RKZ 322 204
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012695796
NSN
5961-01-269-5796
RKZ 322 204
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012695796
NSN
5961-01-269-5796
MFG
RHEINMETALL AIR DEFENCE AG
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
5016249-008
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012695838
NSN
5961-01-269-5838
5016249-008
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012695838
NSN
5961-01-269-5838
MFG
THALES TRAINING & SIMULATION LTD
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
Q4LP-44419
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012695838
NSN
5961-01-269-5838
Q4LP-44419
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012695838
NSN
5961-01-269-5838
MFG
OKI AMERICA INC
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
M206A
TRANSISTOR
NSN, MFG P/N
5961012695920
NSN
5961-01-269-5920
MFG
HYBRID SEMICONDUCTORS & ELECTRONICS INC DBA HYBRID SEMI CONDUCTORS & ELECTRO
Description
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-99
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.5 NOMINAL ON-STATE VOLTAGE, AVERAGE
Related Searches:
1N2988RB
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012695921
NSN
5961-01-269-5921
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 1N2988RB
MANUFACTURERS CODE: 81349
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/124
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.430 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.6 NOMINAL REVERSE VOLTAGE, AVERAGE
Related Searches:
1502B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012697914
NSN
5961-01-269-7914
MFG
OMNETICS INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
B25881
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012697914
NSN
5961-01-269-7914
MFG
ELECTRO IMPULSE LABORATORY INC. DBA ELECTRO IMPULSE
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
152-0650-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012698269
NSN
5961-01-269-8269
152-0650-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012698269
NSN
5961-01-269-8269
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
BB105B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012698269
NSN
5961-01-269-8269
MFG
THOMSON-CSF COMPONENTS CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
U11-4101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012698269
NSN
5961-01-269-8269
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
152-0309-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012698270
NSN
5961-01-269-8270
152-0309-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012698270
NSN
5961-01-269-8270
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N3828A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012698270
NSN
5961-01-269-8270
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
452766-1
TRANSISTOR
NSN, MFG P/N
5961012698985
NSN
5961-01-269-8985
MFG
EDO CORP DIV EDO CORPORATION ANTENNA PRODUCTS & TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: COUNTERMEASURES SET AN/ALQ-99
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
SRF7017H
TRANSISTOR
NSN, MFG P/N
5961012698985
NSN
5961-01-269-8985
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: COUNTERMEASURES SET AN/ALQ-99
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
