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5961-01-130-4369
20 Products
P718-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011304369
NSN
5961-01-130-4369
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV LOCKHEED MARTIN AERONAUTICS COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 3.400 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
121-787
TRANSISTOR
NSN, MFG P/N
5961011305193
NSN
5961-01-130-5193
MFG
ZENITH ELECTRONICS CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT-DUAL GATE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.15 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 55.0 MAXIMUM DRAIN TO GATE VOLTAGE
Related Searches:
C7275
TRANSISTOR
NSN, MFG P/N
5961011305195
NSN
5961-01-130-5195
MFG
HOWELL INSTRUMENTS INC .
Description
TRANSISTOR
Related Searches:
MPS464
TRANSISTOR
NSN, MFG P/N
5961011305195
NSN
5961-01-130-5195
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
Related Searches:
MA4E267ER
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011305197
NSN
5961-01-130-5197
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
7000-31-0200
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011305206
NSN
5961-01-130-5206
7000-31-0200
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011305206
NSN
5961-01-130-5206
MFG
WAVETEK U S INC DIV OF WAVETEK CORP
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
CA3102AE
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011305206
NSN
5961-01-130-5206
CA3102AE
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011305206
NSN
5961-01-130-5206
MFG
RCA CORP DISTRIBUTION AND SPECIAL PRODUCTS
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
A58-1
SEMICONDUCTOR DEVIC
NSN, MFG P/N
5961011305917
NSN
5961-01-130-5917
MFG
WATKINS-JOHNSON CO
Description
SEMICONDUCTOR DEVIC
Related Searches:
121-1039
TRANSISTOR
NSN, MFG P/N
5961011306018
NSN
5961-01-130-6018
MFG
ZENITH ELECTRONICS CORPORATION
Description
TRANSISTOR
Related Searches:
623216
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011306343
NSN
5961-01-130-6343
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-SOUTH BEND BENDIX DR
Description
MAJOR COMPONENTS: SEMICONDUCTOR DEVICE ASSEMBLY,DIODE
MOUNTING CONFIGURATION: TWO HOLES 0.169 IN. DIA,0.187 IN.FROM ENDS,1.875 IN. APART
OVERALL DIAMETER: 1.470 INCHES NOMINAL
OVERALL LENGTH: 2.220 INCHES MINIMUM AND 2.280 INCHES MAXIMUM
OVERALL WIDTH: 0.344 INCHES NOMINAL
Related Searches:
SA8664
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011306343
NSN
5961-01-130-6343
MFG
SEMTECH CORPORATION
Description
MAJOR COMPONENTS: SEMICONDUCTOR DEVICE ASSEMBLY,DIODE
MOUNTING CONFIGURATION: TWO HOLES 0.169 IN. DIA,0.187 IN.FROM ENDS,1.875 IN. APART
OVERALL DIAMETER: 1.470 INCHES NOMINAL
OVERALL LENGTH: 2.220 INCHES MINIMUM AND 2.280 INCHES MAXIMUM
OVERALL WIDTH: 0.344 INCHES NOMINAL
Related Searches:
803-4
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011306344
NSN
5961-01-130-6344
803-4
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011306344
NSN
5961-01-130-6344
MFG
MICRO USPD INC
Description
SPECIAL FEATURES: ALUMINUM HEAT SINK CASE;SINGLE PHASE BRIDGES;FUSED IN GLASS DIODES;35 AMPS MAX DIRECT CURRENT OUTPUT;150 V PIV;M65 DEG C TO P150 DEG C;0.755 IN. MAX L;0.755 IN. MAX W;0.246 IN. MAX H
Related Searches:
932417-1
TRANSISTOR
NSN, MFG P/N
5961011307576
NSN
5961-01-130-7576
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: INS 76301
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 INSULATED WIRE LEAD
TEST DATA DOCUMENT: 06481-932417 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 110.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 110.0 M
Related Searches:
NS08012
TRANSISTOR
NSN, MFG P/N
5961011307576
NSN
5961-01-130-7576
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: INS 76301
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 INSULATED WIRE LEAD
TEST DATA DOCUMENT: 06481-932417 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 110.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 110.0 M
Related Searches:
ST1016H
TRANSISTOR
NSN, MFG P/N
5961011307576
NSN
5961-01-130-7576
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: INS 76301
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 INSULATED WIRE LEAD
TEST DATA DOCUMENT: 06481-932417 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 110.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 110.0 M
Related Searches:
352-8527-012
TRANSISTOR
NSN, MFG P/N
5961011307577
NSN
5961-01-130-7577
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
TRANSISTOR
Related Searches:
SWD3574
TRANSISTOR
NSN, MFG P/N
5961011307577
NSN
5961-01-130-7577
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
TRANSISTOR
Related Searches:
RA-6038
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011307578
NSN
5961-01-130-7578
MFG
ST-SEMICON INC
Description
CURRENT RATING PER CHARACTERISTIC: 21.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
922-6510-012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011307579
NSN
5961-01-130-7579
922-6510-012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011307579
NSN
5961-01-130-7579
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CAPACITANCE RATING IN PICOFARADS: 0.65 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 100.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.065 INCHES MAXIMUM
OVERALL LENGTH: 0.621 INCHES NOMINAL
OVERALL WIDTH: 0.124 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 RIBBON AND 1 CASE
TEST DATA DOCUMENT: 13499-922-6510 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 255.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
DT25024-400S
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011307579
NSN
5961-01-130-7579
DT25024-400S
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011307579
NSN
5961-01-130-7579
MFG
SDI INC
Description
CAPACITANCE RATING IN PICOFARADS: 0.65 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 100.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.065 INCHES MAXIMUM
OVERALL LENGTH: 0.621 INCHES NOMINAL
OVERALL WIDTH: 0.124 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 RIBBON AND 1 CASE
TEST DATA DOCUMENT: 13499-922-6510 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 255.0 MAXIMUM REVERSE VOLTAGE, PEAK
