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5961-01-094-1802
20 Products
925986-2B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010941802
NSN
5961-01-094-1802
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 2.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.780 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1N1827A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010940802
NSN
5961-01-094-0802
MFG
AMPEX SYSTEMS CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N2154
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010940803
NSN
5961-01-094-0803
MFG
SEMITRONICS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
EIA RELEASE2474
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010940803
NSN
5961-01-094-0803
EIA RELEASE2474
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010940803
NSN
5961-01-094-0803
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N2858
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010940804
NSN
5961-01-094-0804
MFG
AMPEX SYSTEMS CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N7464
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010940805
NSN
5961-01-094-0805
MFG
AMPEX SYSTEMS CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N248C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010940806
NSN
5961-01-094-0806
MFG
AMPEX SYSTEMS CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N3122B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010940807
NSN
5961-01-094-0807
MFG
AMPEX SYSTEMS CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
ZB20B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010940808
NSN
5961-01-094-0808
MFG
MALLORY SEMICONDUCTOR CO
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
BA157
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010940951
NSN
5961-01-094-0951
MFG
FREESCALE SEMICONDUCTOR INC.
Description
FUNCTION FOR WHICH DESIGNED: SWITCHING
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.120 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
932179-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010941008
NSN
5961-01-094-1008
932179-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010941008
NSN
5961-01-094-1008
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
DESIGN CONTROL REFERENCE: 932179-1
III END ITEM IDENTIFICATION: AN/ALQ-25
MAJOR COMPONENTS: DIODE 7
MANUFACTURERS CODE: 06481
THE MANUFACTURERS DATA:
Related Searches:
1N5220
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010941222
NSN
5961-01-094-1222
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE 5562 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL LENGTH: 1.000 INCHES MINIMUM
Related Searches:
1N4453
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010941223
NSN
5961-01-094-1223
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE 4724 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL LENGTH: 0.500 INCHES MINIMUM
Related Searches:
1N4978
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010941798
NSN
5961-01-094-1798
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.3 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 00724-20-00382 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 71.4 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
20-00382-125
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010941798
NSN
5961-01-094-1798
20-00382-125
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010941798
NSN
5961-01-094-1798
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.3 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 00724-20-00382 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 71.4 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1N5719
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010941799
NSN
5961-01-094-1799
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.045 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.100 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.3 WATTS MAXIMUM FORWARD POWER DISSIPATION, MAXIMUM PEAK, TOTAL VALUE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 00724-20-00736 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
20-00736-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010941799
NSN
5961-01-094-1799
20-00736-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010941799
NSN
5961-01-094-1799
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.045 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.100 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.3 WATTS MAXIMUM FORWARD POWER DISSIPATION, MAXIMUM PEAK, TOTAL VALUE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 00724-20-00736 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
925521-1B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010941801
NSN
5961-01-094-1801
MFG
RAYTHEON COMPANY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
FD5029
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010941801
NSN
5961-01-094-1801
MFG
FAIRCHILD SEMICONDUCTOR CORP COMPONENTS GROUP SUB OF SCHLUMBERGER LTD
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N4080A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010941802
NSN
5961-01-094-1802
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 2.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.780 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
