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5961-00-780-1993

20 Products

NC121

TRANSISTOR

NSN, MFG P/N

5961007801993

NSN

5961-00-780-1993

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NC121

TRANSISTOR

NSN, MFG P/N

5961007801993

NSN

5961-00-780-1993

MFG

CANADIAN GENERAL ELECTRIC CO LTD COMPOSITE MATERIALS

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MANUFACTURERS CODE: 09817
MFR SOURCE CONTROLLING REFERENCE: NC121
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

1850-0003

TRANSISTOR

NSN, MFG P/N

5961007799527

NSN

5961-00-779-9527

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1850-0003

TRANSISTOR

NSN, MFG P/N

5961007799527

NSN

5961-00-779-9527

MFG

HEWLETT PACKARD CO

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.360 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 83.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE3987 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 0.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

2N1516

TRANSISTOR

NSN, MFG P/N

5961007799527

NSN

5961-00-779-9527

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2N1516

TRANSISTOR

NSN, MFG P/N

5961007799527

NSN

5961-00-779-9527

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.360 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 83.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE3987 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 0.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

28358-817

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007799821

NSN

5961-00-779-9821

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28358-817

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007799821

NSN

5961-00-779-9821

MFG

MARCONI ELECTRONICS INC MARCONI INSTRUMENTS DIV

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.192 INCHES NOMINAL
OVERALL LENGTH: 0.237 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.312 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

DD058

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007799821

NSN

5961-00-779-9821

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DD058

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007799821

NSN

5961-00-779-9821

MFG

LUCAS ELECTRICAL CO LTD

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.192 INCHES NOMINAL
OVERALL LENGTH: 0.237 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.312 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

28372-786

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007799959

NSN

5961-00-779-9959

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28372-786

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007799959

NSN

5961-00-779-9959

MFG

MARCONI ELECTRONICS INC MARCONI INSTRUMENTS DIV

Description

CURRENT RATING PER CHARACTERISTIC: 12.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.120 INCHES NOMINAL
OVERALL LENGTH: 0.225 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

ZB20

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007799959

NSN

5961-00-779-9959

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ZB20

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007799959

NSN

5961-00-779-9959

MFG

EADS DEFENCE AND SECURITY SYSTEMS LI TED

Description

CURRENT RATING PER CHARACTERISTIC: 12.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.120 INCHES NOMINAL
OVERALL LENGTH: 0.225 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

1N752A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007799960

NSN

5961-00-779-9960

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1N752A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007799960

NSN

5961-00-779-9960

MFG

AEROFLEX WICHITA INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.228 INCHES NOMINAL
OVERALL LENGTH: 0.334 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

28371-434

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007799960

NSN

5961-00-779-9960

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28371-434

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007799960

NSN

5961-00-779-9960

MFG

MARCONI ELECTRONICS INC MARCONI INSTRUMENTS DIV

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.228 INCHES NOMINAL
OVERALL LENGTH: 0.334 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

ZB5-6

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007799960

NSN

5961-00-779-9960

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ZB5-6

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007799960

NSN

5961-00-779-9960

MFG

EADS DEFENCE AND SECURITY SYSTEMS LI TED

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.228 INCHES NOMINAL
OVERALL LENGTH: 0.334 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

28371-606

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007799961

NSN

5961-00-779-9961

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28371-606

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007799961

NSN

5961-00-779-9961

MFG

MARCONI ELECTRONICS INC MARCONI INSTRUMENTS DIV

Description

CURRENT RATING PER CHARACTERISTIC: 34.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.120 INCHES NOMINAL
OVERALL LENGTH: 0.225 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.5 MAXIMUM NOMINAL REGULATOR VOLTAGE

ZB7-5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007799961

NSN

5961-00-779-9961

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ZB7-5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007799961

NSN

5961-00-779-9961

MFG

EADS DEFENCE AND SECURITY SYSTEMS LI TED

Description

CURRENT RATING PER CHARACTERISTIC: 34.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.120 INCHES NOMINAL
OVERALL LENGTH: 0.225 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.5 MAXIMUM NOMINAL REGULATOR VOLTAGE

3480417-2

TRANSISTOR

NSN, MFG P/N

5961007800036

NSN

5961-00-780-0036

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3480417-2

TRANSISTOR

NSN, MFG P/N

5961007800036

NSN

5961-00-780-0036

MFG

SENSOR AND ANTENNA SYSTEMS LANSDALE INC.

Description

DESIGN CONTROL REFERENCE: 3480417-2
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 93346
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

1N831M

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961007800060

NSN

5961-00-780-0060

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1N831M

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961007800060

NSN

5961-00-780-0060

MFG

SKYWORKS SOLUTIONS INC.

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE

2480212-1

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961007800060

NSN

5961-00-780-0060

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2480212-1

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961007800060

NSN

5961-00-780-0060

MFG

SENSOR AND ANTENNA SYSTEMS LANSDALE INC.

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE

2N1164A

TRANSISTOR

NSN, MFG P/N

5961007801987

NSN

5961-00-780-1987

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2N1164A

TRANSISTOR

NSN, MFG P/N

5961007801987

NSN

5961-00-780-1987

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: POINT CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE2995 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

2N2102

TRANSISTOR

NSN, MFG P/N

5961007801993

NSN

5961-00-780-1993

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2N2102

TRANSISTOR

NSN, MFG P/N

5961007801993

NSN

5961-00-780-1993

MFG

INTERSIL CORPORATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MANUFACTURERS CODE: 09817
MFR SOURCE CONTROLLING REFERENCE: NC121
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

3-30075

TRANSISTOR

NSN, MFG P/N

5961007801993

NSN

5961-00-780-1993

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3-30075

TRANSISTOR

NSN, MFG P/N

5961007801993

NSN

5961-00-780-1993

MFG

CALIFORNIA INSTRUMENTS CORP

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MANUFACTURERS CODE: 09817
MFR SOURCE CONTROLLING REFERENCE: NC121
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

5800583-942000-118

TRANSISTOR

NSN, MFG P/N

5961007801993

NSN

5961-00-780-1993

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5800583-942000-118

TRANSISTOR

NSN, MFG P/N

5961007801993

NSN

5961-00-780-1993

MFG

EADS DEUTSCHLAND GMBH DEFENCE ELECTR ONICS ABTEILUNG VELB6

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MANUFACTURERS CODE: 09817
MFR SOURCE CONTROLLING REFERENCE: NC121
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

5L5512-201-45

TRANSISTOR

NSN, MFG P/N

5961007801993

NSN

5961-00-780-1993

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5L5512-201-45

TRANSISTOR

NSN, MFG P/N

5961007801993

NSN

5961-00-780-1993

MFG

EADS DEUTSCHLAND GMBH -VERTEIDIGUNG UND ZIVILE SYSTEME-

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MANUFACTURERS CODE: 09817
MFR SOURCE CONTROLLING REFERENCE: NC121
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD