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5961-00-986-2083

20 Products

BR82A

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961009862083

NSN

5961-00-986-2083

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BR82A

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961009862083

NSN

5961-00-986-2083

MFG

DIODES INC

178848

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009860302

NSN

5961-00-986-0302

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178848

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009860302

NSN

5961-00-986-0302

MFG

LUCENT TECHNOLOGIES INC DBA FEDERAL MARKETING GROUP

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON

178857

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009860303

NSN

5961-00-986-0303

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178857

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009860303

NSN

5961-00-986-0303

MFG

AMERICAN TELEPHONE AND TELEGRAPH CO

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
SEMICONDUCTOR MATERIAL: SILICON

179463

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009860304

NSN

5961-00-986-0304

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179463

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009860304

NSN

5961-00-986-0304

MFG

TELEMECHANICS INC

Description

DESIGN CONTROL REFERENCE: 179463
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 57712
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

179665

TRANSISTOR

NSN, MFG P/N

5961009860305

NSN

5961-00-986-0305

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179665

TRANSISTOR

NSN, MFG P/N

5961009860305

NSN

5961-00-986-0305

MFG

AMERICAN TELEPHONE AND TELEGRAPH CO

Description

DESIGN CONTROL REFERENCE: 179665
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 64959
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

DMS 77025B

TRANSISTOR

NSN, MFG P/N

5961009860305

NSN

5961-00-986-0305

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DMS 77025B

TRANSISTOR

NSN, MFG P/N

5961009860305

NSN

5961-00-986-0305

MFG

DLA LAND AND MARITIME

Description

DESIGN CONTROL REFERENCE: 179665
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 64959
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

F35023

TRANSISTOR

NSN, MFG P/N

5961009860305

NSN

5961-00-986-0305

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F35023

TRANSISTOR

NSN, MFG P/N

5961009860305

NSN

5961-00-986-0305

MFG

LUCENT TECHNOLOGIES INC DBA FEDERAL MARKETING GROUP

Description

DESIGN CONTROL REFERENCE: 179665
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 64959
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

SA800

TRANSISTOR

NSN, MFG P/N

5961009860305

NSN

5961-00-986-0305

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SA800

TRANSISTOR

NSN, MFG P/N

5961009860305

NSN

5961-00-986-0305

MFG

FREESCALE SEMICONDUCTOR INC.

Description

DESIGN CONTROL REFERENCE: 179665
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 64959
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

128C236H01

TRANSISTOR

NSN, MFG P/N

5961009860374

NSN

5961-00-986-0374

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128C236H01

TRANSISTOR

NSN, MFG P/N

5961009860374

NSN

5961-00-986-0374

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 1.250 INCHES MAXIMUM
OVERALL LENGTH: 0.520 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 PIN
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

7297100

TRANSISTOR

NSN, MFG P/N

5961009860374

NSN

5961-00-986-0374

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7297100

TRANSISTOR

NSN, MFG P/N

5961009860374

NSN

5961-00-986-0374

MFG

GENERAL MOTORS CORP DELCO ELECTRONICS DIV

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 1.250 INCHES MAXIMUM
OVERALL LENGTH: 0.520 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 PIN
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

DMS 80068B

TRANSISTOR

NSN, MFG P/N

5961009860374

NSN

5961-00-986-0374

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DMS 80068B

TRANSISTOR

NSN, MFG P/N

5961009860374

NSN

5961-00-986-0374

MFG

DLA LAND AND MARITIME

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 1.250 INCHES MAXIMUM
OVERALL LENGTH: 0.520 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 PIN
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

120406-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009861740

NSN

5961-00-986-1740

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120406-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009861740

NSN

5961-00-986-1740

MFG

MCDONNELL DOUGLAS CORP MCDONNELL DOUGLAS AEROSPACE OPNS WEST

Description

DESIGN CONTROL REFERENCE: 4E100M28
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 14433
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

1N3846

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009861740

NSN

5961-00-986-1740

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1N3846

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009861740

NSN

5961-00-986-1740

MFG

ITT SEMICONDUCTORS A DIVISION OF INTERNATIONAL TELEPHONE AND TELEGRAPH CORP

Description

DESIGN CONTROL REFERENCE: 4E100M28
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 14433
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

4E100M28

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009861740

NSN

5961-00-986-1740

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4E100M28

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009861740

NSN

5961-00-986-1740

MFG

ITT SEMICONDUCTORS DIV

Description

DESIGN CONTROL REFERENCE: 4E100M28
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 14433
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

4EX506

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009861740

NSN

5961-00-986-1740

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4EX506

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009861740

NSN

5961-00-986-1740

MFG

BKC SEMICONDUCTORS INC

Description

DESIGN CONTROL REFERENCE: 4E100M28
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 14433
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

62A5A51-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009861740

NSN

5961-00-986-1740

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62A5A51-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009861740

NSN

5961-00-986-1740

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRUMMAN SYSTEMS

Description

DESIGN CONTROL REFERENCE: 4E100M28
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 14433
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

G390080S1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009861740

NSN

5961-00-986-1740

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G390080S1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009861740

NSN

5961-00-986-1740

MFG

ITT CORPORATION DBA ITT GILFILLAN

Description

DESIGN CONTROL REFERENCE: 4E100M28
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 14433
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

490140550

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009861984

NSN

5961-00-986-1984

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490140550

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009861984

NSN

5961-00-986-1984

MFG

CUNNINGHAM CORP SUB OF GLEASON WORKS

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.038 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM REVERSE POWER DISSIPATION, AVERAGE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK

T157

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009861984

NSN

5961-00-986-1984

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T157

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009861984

NSN

5961-00-986-1984

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.038 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM REVERSE POWER DISSIPATION, AVERAGE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK

900999-6536

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961009862083

NSN

5961-00-986-2083

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900999-6536

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961009862083

NSN

5961-00-986-2083

MFG

NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION