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5961-01-450-4227
20 Products
100H121PC40
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014504227
NSN
5961-01-450-4227
100H121PC40
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014504227
NSN
5961-01-450-4227
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA ES POWER CONTROL SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 4A11701H06
MANUFACTURERS CODE: 04804
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVAL INVENTORY CONTROL POINT, MECHANICSBURG, ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
4057729-0701
TRANSISTOR
NSN, MFG P/N
5961014502740
NSN
5961-01-450-2740
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 22.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: CERAMIC AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: SLOT
OVERALL HEIGHT: 0.225 INCHES MAXIMUM
OVERALL LENGTH: 0.910 INCHES MAXIMUM
OVERALL WIDTH: 0.750 INCHES MINIMUM
POWER RATING PER CHARACTERISTIC: 1458.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 RIBBON AND 1 CASE
TEST DATA DOCUMENT: 06845-4057729 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 65.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 3.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
MS2441
TRANSISTOR
NSN, MFG P/N
5961014502740
NSN
5961-01-450-2740
MFG
MICROSEMI CORP. - MONTGOMERYVILLE
Description
CURRENT RATING PER CHARACTERISTIC: 22.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: CERAMIC AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: SLOT
OVERALL HEIGHT: 0.225 INCHES MAXIMUM
OVERALL LENGTH: 0.910 INCHES MAXIMUM
OVERALL WIDTH: 0.750 INCHES MINIMUM
POWER RATING PER CHARACTERISTIC: 1458.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 RIBBON AND 1 CASE
TEST DATA DOCUMENT: 06845-4057729 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 65.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 3.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
SD1451-05
TRANSISTOR
NSN, MFG P/N
5961014502740
NSN
5961-01-450-2740
MFG
STMICROELECTRONICS INC
Description
CURRENT RATING PER CHARACTERISTIC: 22.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: CERAMIC AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: SLOT
OVERALL HEIGHT: 0.225 INCHES MAXIMUM
OVERALL LENGTH: 0.910 INCHES MAXIMUM
OVERALL WIDTH: 0.750 INCHES MINIMUM
POWER RATING PER CHARACTERISTIC: 1458.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 RIBBON AND 1 CASE
TEST DATA DOCUMENT: 06845-4057729 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 65.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 3.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
JANTX2N1302
TRANSISTOR
NSN, MFG P/N
5961014502779
NSN
5961-01-450-2779
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM BREAKOVER CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N1302
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/126
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS AND 25.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
Related Searches:
UT1519
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014503186
NSN
5961-01-450-3186
MFG
MICRO USPD INC
Description
III END ITEM IDENTIFICATION: SEAHAWK HELICOPTER S70B-2
Related Searches:
204-0162-010
TRANSISTOR
NSN, MFG P/N
5961014503204
NSN
5961-01-450-3204
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
TRANSISTOR
Related Searches:
418141-5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014503209
NSN
5961-01-450-3209
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 225.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
JANTX1N4454-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014503209
NSN
5961-01-450-3209
JANTX1N4454-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014503209
NSN
5961-01-450-3209
MFG
BKC SEMICONDUCTORS INC
Description
CURRENT RATING PER CHARACTERISTIC: 225.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
JANTX2N1303
TRANSISTOR
NSN, MFG P/N
5961014503656
NSN
5961-01-450-3656
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N1303
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/126
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS AND 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
Related Searches:
204-0171
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014503766
NSN
5961-01-450-3766
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
III END ITEM IDENTIFICATION: UHF/RECEIVER E/I FSCM 12969
INCLOSURE MATERIAL: PLASTIC
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
UTG2020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014503766
NSN
5961-01-450-3766
MFG
MICRO USPD INC
Description
III END ITEM IDENTIFICATION: UHF/RECEIVER E/I FSCM 12969
INCLOSURE MATERIAL: PLASTIC
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
63D727053G2
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961014503779
NSN
5961-01-450-3779
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN SIMULATION TRAINING & SUPPORT
Description
III END ITEM IDENTIFICATION: PANEL ASSEMBLY SU E/I FSCM 16331
INCLOSURE MATERIAL: PLASTIC
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
13582093
DIODE MODULE
NSN, MFG P/N
5961014504046
NSN
5961-01-450-4046
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
III END ITEM IDENTIFICATION: HIGH VOLTAGE GENERATOR, SENTINEL GROUND BASE RADAR
III PRECIOUS MATERIAL AND LOCATION: UNKNOWN GOLD AND UNKNOWN SILVER AND UNKNOWN PLATINUM
Related Searches:
F1857D1200
DIODE MODULE
NSN, MFG P/N
5961014504046
NSN
5961-01-450-4046
MFG
CRYDOM CORP
Description
III END ITEM IDENTIFICATION: HIGH VOLTAGE GENERATOR, SENTINEL GROUND BASE RADAR
III PRECIOUS MATERIAL AND LOCATION: UNKNOWN GOLD AND UNKNOWN SILVER AND UNKNOWN PLATINUM
Related Searches:
13582092
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014504053
NSN
5961-01-450-4053
13582092
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014504053
NSN
5961-01-450-4053
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
III END ITEM IDENTIFICATION: SENTINEL, OTHER MISSILE RELATED MATERIAL
PRECIOUS MATERIAL AND LOCATION: UNKNOWN SILVER AND UNKNOWN GOLD AND UNKNOWN PLATINUM
Related Searches:
M5060TB600
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014504053
NSN
5961-01-450-4053
M5060TB600
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014504053
NSN
5961-01-450-4053
MFG
CRYDOM CORP
Description
III END ITEM IDENTIFICATION: SENTINEL, OTHER MISSILE RELATED MATERIAL
PRECIOUS MATERIAL AND LOCATION: UNKNOWN SILVER AND UNKNOWN GOLD AND UNKNOWN PLATINUM
Related Searches:
204-0056-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014504217
NSN
5961-01-450-4217
204-0056-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014504217
NSN
5961-01-450-4217
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
204-0077-020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014504219
NSN
5961-01-450-4219
204-0077-020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014504219
NSN
5961-01-450-4219
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
100H109PC41
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014504226
NSN
5961-01-450-4226
100H109PC41
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014504226
NSN
5961-01-450-4226
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA ES POWER CONTROL SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 4A11701H04
MANUFACTURERS CODE: 04804
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVAL INVENTORY CONTROL POINT, MECHANICSBURG, ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
