Featured Products

My Quote Request

No products added yet

5961-00-931-0816

20 Products

FD1029EA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009310816

NSN

5961-00-931-0816

View More Info

FD1029EA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009310816

NSN

5961-00-931-0816

MFG

GTE COMMUNICATION SYSTEMS CORP

Description

DESIGN CONTROL REFERENCE: FD1029EA
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 04773
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

FD1029FU

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009310817

NSN

5961-00-931-0817

View More Info

FD1029FU

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009310817

NSN

5961-00-931-0817

MFG

GTE COMMUNICATION SYSTEMS CORP

Description

DESIGN CONTROL REFERENCE: FD1029FU
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 04773
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

FD1029GG

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009310818

NSN

5961-00-931-0818

View More Info

FD1029GG

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009310818

NSN

5961-00-931-0818

MFG

GTE COMMUNICATION SYSTEMS CORP

Description

DESIGN CONTROL REFERENCE: FD1029GG
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 04773
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

174-25566-61

TRANSISTOR

NSN, MFG P/N

5961009312766

NSN

5961-00-931-2766

View More Info

174-25566-61

TRANSISTOR

NSN, MFG P/N

5961009312766

NSN

5961-00-931-2766

MFG

GTE COMMUNICATION SYSTEMS CORP

Description

CURRENT RATING PER CHARACTERISTIC: 0.20 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AIRCRAFT, STRATOFORTRESS B-52; BLUE RIDGE CLASS LCC-19; FORRESTAL CLASS CV; AIRCRAFT, GALAXY C-5; WASP CLASS LHD; NIMITZ CLASS CVN; TARAWA CLASS LHA; TACTICAL DATA INFORMATION EXCHANGE SYSTEM TADIX B TRE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATIN

2N2222

TRANSISTOR

NSN, MFG P/N

5961009312766

NSN

5961-00-931-2766

View More Info

2N2222

TRANSISTOR

NSN, MFG P/N

5961009312766

NSN

5961-00-931-2766

MFG

NEW JERSEY SEMI-CONDUCTOR PRODUCTS INC

Description

CURRENT RATING PER CHARACTERISTIC: 0.20 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AIRCRAFT, STRATOFORTRESS B-52; BLUE RIDGE CLASS LCC-19; FORRESTAL CLASS CV; AIRCRAFT, GALAXY C-5; WASP CLASS LHD; NIMITZ CLASS CVN; TARAWA CLASS LHA; TACTICAL DATA INFORMATION EXCHANGE SYSTEM TADIX B TRE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATIN

SG4933

TRANSISTOR

NSN, MFG P/N

5961009312766

NSN

5961-00-931-2766

View More Info

SG4933

TRANSISTOR

NSN, MFG P/N

5961009312766

NSN

5961-00-931-2766

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

CURRENT RATING PER CHARACTERISTIC: 0.20 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AIRCRAFT, STRATOFORTRESS B-52; BLUE RIDGE CLASS LCC-19; FORRESTAL CLASS CV; AIRCRAFT, GALAXY C-5; WASP CLASS LHD; NIMITZ CLASS CVN; TARAWA CLASS LHA; TACTICAL DATA INFORMATION EXCHANGE SYSTEM TADIX B TRE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATIN

PRS6384

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009313792

NSN

5961-00-931-3792

View More Info

PRS6384

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009313792

NSN

5961-00-931-3792

MFG

DIODES INC

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
SEMICONDUCTOR MATERIAL: SILICON

2N2644

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961009313892

NSN

5961-00-931-3892

View More Info

2N2644

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961009313892

NSN

5961-00-931-3892

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

1902-0070

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009313947

NSN

5961-00-931-3947

View More Info

1902-0070

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009313947

NSN

5961-00-931-3947

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.6 MAXIMUM NOMINAL REGULATOR VOLTAGE

SZ12716

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009313947

NSN

5961-00-931-3947

View More Info

SZ12716

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009313947

NSN

5961-00-931-3947

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.6 MAXIMUM NOMINAL REGULATOR VOLTAGE

0N107354

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961009314340

NSN

5961-00-931-4340

View More Info

0N107354

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961009314340

NSN

5961-00-931-4340

MFG

NATIONAL SECURITY AGENCY

MR840

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009314866

NSN

5961-00-931-4866

View More Info

MR840

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009314866

NSN

5961-00-931-4866

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 0.030 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.980 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK

4820078-505

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009315032

NSN

5961-00-931-5032

View More Info

4820078-505

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009315032

NSN

5961-00-931-5032

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - GLOBAL MOBILITY SYSTEMS

Description

DESIGN CONTROL REFERENCE: 4820078-505
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 88277
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: DIODE LEADS BONDED TO MOUNTING UNIT TO FORM ONE ITEM OF SUPPLY
THE MANUFACTURERS DATA:

69-6399

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009315040

NSN

5961-00-931-5040

View More Info

69-6399

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009315040

NSN

5961-00-931-5040

MFG

INTERNATIONAL RECTIFIER CORPORATION

938D392-5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009315040

NSN

5961-00-931-5040

View More Info

938D392-5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009315040

NSN

5961-00-931-5040

MFG

HAMILTON SUNDSTRAND CORPORATION

CD32461

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009315040

NSN

5961-00-931-5040

View More Info

CD32461

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009315040

NSN

5961-00-931-5040

MFG

TELCOM SEMICONDUCTOR INC

SZ50195-5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009315040

NSN

5961-00-931-5040

View More Info

SZ50195-5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009315040

NSN

5961-00-931-5040

MFG

FREESCALE SEMICONDUCTOR INC.

PM-D52

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009315860

NSN

5961-00-931-5860

View More Info

PM-D52

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009315860

NSN

5961-00-931-5860

MFG

MARINE ELECTRIC SYSTEMS INC . DBA MESYS

Description

CURRENT RATING PER CHARACTERISTIC: 180.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
OVERALL LENGTH: 1.550 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 68.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -20.0 TO 20.0

152-08

TRANSISTOR

NSN, MFG P/N

5961009315947

NSN

5961-00-931-5947

View More Info

152-08

TRANSISTOR

NSN, MFG P/N

5961009315947

NSN

5961-00-931-5947

MFG

WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV

Description

DESIGN CONTROL REFERENCE: SPC152-08
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 52333
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:

SPC152-08

TRANSISTOR

NSN, MFG P/N

5961009315947

NSN

5961-00-931-5947

View More Info

SPC152-08

TRANSISTOR

NSN, MFG P/N

5961009315947

NSN

5961-00-931-5947

MFG

API ELECTRONICS INC.

Description

DESIGN CONTROL REFERENCE: SPC152-08
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 52333
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA: