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5961-01-103-6485
20 Products
479-0997-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011036485
NSN
5961-01-103-6485
479-0997-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011036485
NSN
5961-01-103-6485
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
DESIGN CONTROL REFERENCE: 479-0997-002
MANUFACTURERS CODE: 94756
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: NAVORD OD 41152
Related Searches:
479-0900-003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011036486
NSN
5961-01-103-6486
479-0900-003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011036486
NSN
5961-01-103-6486
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
DESIGN CONTROL REFERENCE: 479-0900-003
MANUFACTURERS CODE: 94756
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SPECIAL TEST FEATURES: NAVORD OD 41152
Related Searches:
1N5246A
DIODE,ZENER
NSN, MFG P/N
5961011036510
NSN
5961-01-103-6510
MFG
FREESCALE SEMICONDUCTOR INC.
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: 16V,10 PERCENT,COMMON USE
Related Searches:
359D329G01
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011036559
NSN
5961-01-103-6559
359D329G01
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011036559
NSN
5961-01-103-6559
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
DESIGN CONTROL REFERENCE: 359D329G01
III END ITEM IDENTIFICATION: ARSR3
MANUFACTURERS CODE: 97942
OVERALL DIAMETER: 5.000 INCHES NOMINAL
OVERALL LENGTH: 9.900 INCHES NOMINAL
SPECIAL FEATURES: MAJOR COMPONENTS DIODE 1, RESISTOR 10; MOUNTING CONFIGURATION MECHANICALLY MOUNTED;TI 6340.8, FA 9200, 6ARV1, PG 8-517
THE MANUFACTURERS DATA:
Related Searches:
5951609-1
DIODE ASSY
NSN, MFG P/N
5961011036842
NSN
5961-01-103-6842
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - GLOBAL MOBILITY SYSTEMS
Description
DIODE ASSY
Related Searches:
2N6578
TRANSISTOR
NSN, MFG P/N
5961011037287
NSN
5961-01-103-7287
MFG
INTERSIL CORPORATION
Description
FUNCTION FOR WHICH DESIGNED: SWITCHING
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
Related Searches:
2N6456
TRANSISTOR
NSN, MFG P/N
5961011037288
NSN
5961-01-103-7288
MFG
MICROSEMI PPC INC
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL DIAMETER: 0.505 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 WIRE HOOK
Related Searches:
15835-011
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011037363
NSN
5961-01-103-7363
15835-011
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011037363
NSN
5961-01-103-7363
MFG
ASTRONAUTICS CORPORATION OF AMERICA
Description
SPECIAL FEATURES: SINGLE PHASE;FULL WAVE;M55 TO P150 DEG C OPERATING TEMP RANGE;0.750 IN. SQUARE;ALUMINUM CASE;ANODIC EXTERNAL SURFACE COATING PER MIL-A-8625;BLACK COLOR
Related Searches:
SZA230-6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011037518
NSN
5961-01-103-7518
MFG
MOTOROLA INC. DBA INTEGRATED INFORMATION SYSTEMS GROUP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1S2473
DIODE
NSN, MFG P/N
5961011037653
NSN
5961-01-103-7653
MFG
HITACHI DENSHI LTD
Description
DIODE
Related Searches:
2SA844
TRANSISTOR,SILICON,
NSN, MFG P/N
5961011037671
NSN
5961-01-103-7671
MFG
HITACHI DENSHI LTD
Description
TRANSISTOR,SILICON,
Related Searches:
8-729-384-48
TRANSISTOR,SILICON,
NSN, MFG P/N
5961011037671
NSN
5961-01-103-7671
MFG
SONY CORPORATION
Description
TRANSISTOR,SILICON,
Related Searches:
TRW3001
TRANSISTOR
NSN, MFG P/N
5961011037825
NSN
5961-01-103-7825
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: EXTERNAL SURFACES GOLD
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MINIMUM VOLTAGE; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 FLANGE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER_!
Related Searches:
78200320-002
DIODE BRIDGE
NSN, MFG P/N
5961011038636
NSN
5961-01-103-8636
MFG
GETRONICS GOVERNMENT SOLUTIONS LLC
Description
DIODE BRIDGE
Related Searches:
78200320-003
DIODE BRIDGE
NSN, MFG P/N
5961011038636
NSN
5961-01-103-8636
MFG
BULL HN INFORMATION SYSTEMS INC
Description
DIODE BRIDGE
Related Searches:
RD11E
DIODE
NSN, MFG P/N
5961011038646
NSN
5961-01-103-8646
MFG
SONY CORPORATION
Description
DIODE
Related Searches:
V09C
DIODE
NSN, MFG P/N
5961011038672
NSN
5961-01-103-8672
MFG
SONY CORPORATION
Description
DIODE
Related Searches:
V06C
DIODE
NSN, MFG P/N
5961011038674
NSN
5961-01-103-8674
MFG
SONY CORPORATION
Description
DIODE
Related Searches:
2SC633A
TRANSISTOR
NSN, MFG P/N
5961011038767
NSN
5961-01-103-8767
MFG
SONY CORPORATION
Description
TRANSISTOR
Related Searches:
SK3504
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011038962
NSN
5961-01-103-8962
SK3504
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011038962
NSN
5961-01-103-8962
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 22.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.625 INCHES NOMINAL
OVERALL LENGTH: 1.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM BREAKOVER VOLTAGE, DC
