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5961-00-824-9311
20 Products
7055892P1
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008249311
NSN
5961-00-824-9311
7055892P1
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008249311
NSN
5961-00-824-9311
MFG
LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS
Description
ACCOMMODATED EQUIPMENT IDENTIFYING NUMBER: IN21 OR IN23
COAXIAL CONNECTOR SERIES DESIGNATION: N
DESIGN CONTROL REFERENCE: 7875
INPUT CONTACT TYPE: FEMALE
INPUT TERMINAL TYPE: COAXIAL CABLE
MANUFACTURERS CODE: 74868
OPERATING FREQUENCY: 3.06 GIGAHERTZ MINIMUM AND 9.3765 GIGAHERTZ MAXIMUM
OUTPUT COAXIAL CONNECTION SERIES DESIGNATION: BNC
OUTPUT CONTACT TYPE: FEMALE
OUTPUT TERMINAL TYPE: COAXIAL CABLE
OVERALL DIAMETER: 0.625 INCHES NOMINAL
OVERALL LENGTH: 2.812 INCHES NOMINAL
THE MANUFACTURERS DATA:
Related Searches:
575R463H02
TRANSISTOR
NSN, MFG P/N
5961008248487
NSN
5961-00-824-8487
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 1.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
575R463H01
TRANSISTOR
NSN, MFG P/N
5961008248488
NSN
5961-00-824-8488
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.870 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 1.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
1+5M20Z10
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008248490
NSN
5961-00-824-8490
MFG
FREESCALE SEMICONDUCTOR INC.
Description
DESIGN CONTROL REFERENCE: 1-5M20Z5
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 1VPW8
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
1-5M20Z5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008248490
NSN
5961-00-824-8490
MFG
GENERAL DYNAMICS C4 SYSTEMS INC.
Description
DESIGN CONTROL REFERENCE: 1-5M20Z5
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 1VPW8
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
353-1866-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008248490
NSN
5961-00-824-8490
353-1866-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008248490
NSN
5961-00-824-8490
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
DESIGN CONTROL REFERENCE: 1-5M20Z5
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 1VPW8
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
SMC417018-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008248490
NSN
5961-00-824-8490
SMC417018-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008248490
NSN
5961-00-824-8490
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
DESIGN CONTROL REFERENCE: 1-5M20Z5
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 1VPW8
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
1-5M18Z
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008248491
NSN
5961-00-824-8491
MFG
MOTOROLA INC. DBA INTEGRATED INFORMATION SYSTEMS GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 21.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.338 INCHES MAXIMUM
OVERALL LENGTH: 0.256 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.940 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1N1737
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008248496
NSN
5961-00-824-8496
MFG
NAVCOM DEFENSE ELECTRONICS INC.
Description
DESIGN CONTROL REFERENCE: 1N1737
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 57057
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
1002390
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008248499
NSN
5961-00-824-8499
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION
Description
DESIGN CONTROL REFERENCE: 1002390
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 03956
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
1N485
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008248499
NSN
5961-00-824-8499
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
DESIGN CONTROL REFERENCE: 1002390
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 03956
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
1N690
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008248502
NSN
5961-00-824-8502
MFG
SPERRY CORP
Description
DESIGN CONTROL REFERENCE: 1N690
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 00170
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
575R428H09
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008248710
NSN
5961-00-824-8710
575R428H09
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008248710
NSN
5961-00-824-8710
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MICROAMPERES MAXIMUM REVERSE CURRENT, TOTAL RMS
DESIGN CONTROL REFERENCE: 575R428H09
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 97942
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 315.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
Related Searches:
4JA411DX155
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008248712
NSN
5961-00-824-8712
4JA411DX155
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008248712
NSN
5961-00-824-8712
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OVERALL HEIGHT: 1.560 INCHES NOMINAL
OVERALL LENGTH: 4.200 INCHES NOMINAL
OVERALL WIDTH: 1.560 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
Related Searches:
8426436-4
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008248712
NSN
5961-00-824-8712
8426436-4
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008248712
NSN
5961-00-824-8712
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OVERALL HEIGHT: 1.560 INCHES NOMINAL
OVERALL LENGTH: 4.200 INCHES NOMINAL
OVERALL WIDTH: 1.560 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
Related Searches:
2W341
TRANSISTOR
NSN, MFG P/N
5961008248740
NSN
5961-00-824-8740
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.365 INCHES MINIMUM AND 0.385 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SUPPLIED W/MTG CLAMP; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 97942-575R680 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 65.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 1.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS
Related Searches:
575R680H01
TRANSISTOR
NSN, MFG P/N
5961008248740
NSN
5961-00-824-8740
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.365 INCHES MINIMUM AND 0.385 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SUPPLIED W/MTG CLAMP; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 97942-575R680 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 65.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 1.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS
Related Searches:
FBN36603
TRANSISTOR
NSN, MFG P/N
5961008248749
NSN
5961-00-824-8749
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM BASE CURRENT, DC AND 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.6 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND -45.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE
Related Searches:
2N3536
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961008248750
NSN
5961-00-824-8750
2N3536
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961008248750
NSN
5961-00-824-8750
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL DIAMETER: 5.063 INCHES MAXIMUM
OVERALL LENGTH: 1.310 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 16.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE4911 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
4703536-00
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961008248750
NSN
5961-00-824-8750
4703536-00
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961008248750
NSN
5961-00-824-8750
MFG
EIP MICROWAVE INC
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL DIAMETER: 5.063 INCHES MAXIMUM
OVERALL LENGTH: 1.310 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 16.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE4911 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM BREAKOVER VOLTAGE, DC
