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5961-00-789-3775

20 Products

019-026-007

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961007893775

NSN

5961-00-789-3775

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019-026-007

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961007893775

NSN

5961-00-789-3775

MFG

MEGGITT SAFETY SYSTEMS INC. DIV MEGGITT SAFETY SYSTEMS INC

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 5 SEMICONDUCTOR DEVICE DIODE

900786-4

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961007893775

NSN

5961-00-789-3775

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900786-4

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961007893775

NSN

5961-00-789-3775

MFG

FREESCALE SEMICONDUCTOR INC.

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 5 SEMICONDUCTOR DEVICE DIODE

2N2043

TRANSISTOR

NSN, MFG P/N

5961007894031

NSN

5961-00-789-4031

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2N2043

TRANSISTOR

NSN, MFG P/N

5961007894031

NSN

5961-00-789-4031

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE3382 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 105.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 105.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 75.0 MAXIMUM BREAKDOWN VOLTAGE, EMI

3004326-00

TRANSISTOR

NSN, MFG P/N

5961007894031

NSN

5961-00-789-4031

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3004326-00

TRANSISTOR

NSN, MFG P/N

5961007894031

NSN

5961-00-789-4031

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2

Description

CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE3382 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 105.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 105.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 75.0 MAXIMUM BREAKDOWN VOLTAGE, EMI

8625593

TRANSISTOR

NSN, MFG P/N

5961007894031

NSN

5961-00-789-4031

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8625593

TRANSISTOR

NSN, MFG P/N

5961007894031

NSN

5961-00-789-4031

MFG

ARMY UNITED STATES DEPARTMENT OF THE DBA ROCK ISLAND ARSENAL

Description

CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE3382 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 105.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 105.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 75.0 MAXIMUM BREAKDOWN VOLTAGE, EMI

RT-162

TRANSISTOR

NSN, MFG P/N

5961007894031

NSN

5961-00-789-4031

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RT-162

TRANSISTOR

NSN, MFG P/N

5961007894031

NSN

5961-00-789-4031

MFG

RAYTHEON COMPANY

Description

CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE3382 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 105.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 105.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 75.0 MAXIMUM BREAKDOWN VOLTAGE, EMI

2312453PC1

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961007895393

NSN

5961-00-789-5393

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2312453PC1

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961007895393

NSN

5961-00-789-5393

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE

A53523

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961007895393

NSN

5961-00-789-5393

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A53523

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961007895393

NSN

5961-00-789-5393

MFG

FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE

CA6976

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961007895393

NSN

5961-00-789-5393

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CA6976

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961007895393

NSN

5961-00-789-5393

MFG

TELCOM SEMICONDUCTOR INC

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE

26007700

TRANSISTOR

NSN, MFG P/N

5961007897479

NSN

5961-00-789-7479

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26007700

TRANSISTOR

NSN, MFG P/N

5961007897479

NSN

5961-00-789-7479

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON

363A019H15

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961007897902

NSN

5961-00-789-7902

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363A019H15

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961007897902

NSN

5961-00-789-7902

MFG

WESTINGHOUSE ELECTRIC CORP CONTROL BUSINESS UNIT

4JA2511BB1AD1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961007897902

NSN

5961-00-789-7902

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4JA2511BB1AD1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961007897902

NSN

5961-00-789-7902

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT

363A019H14

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007897905

NSN

5961-00-789-7905

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363A019H14

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007897905

NSN

5961-00-789-7905

MFG

WESTINGHOUSE ELECTRIC CORP CONTROL BUSINESS UNIT

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN

2303825-1

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961007898184

NSN

5961-00-789-8184

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2303825-1

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961007898184

NSN

5961-00-789-8184

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

MATERIAL: COPPER
MOUNTING FACILITY TYPE AND QUANTITY: 1 THREADED STUD SINGLE MOUNTING FACILITY
MOUNTING STUD LENGTH: 0.188 INCHES NOMINAL SINGLE MOUNTING FACILITY
NOMINAL THREAD SIZE: 0.112 INCHES SINGLE MOUNTING FACILITY
OVERALL DIAMETER: 0.375 INCHES NOMINAL
OVERALL LENGTH: 0.370 INCHES NOMINAL
STYLE DESIGNATOR: 3C CYLINDRICAL
THREAD CLASS: 2B SINGLE MOUNTING FACILITY
THREAD QUANTITY PER INCH: 40 SINGLE MOUNTING FACILITY
THREAD SERIES DESIGNATOR: UNC SINGLE MOUNTING FACILITY
THREAD TOLERANCE CLASS: 6H EXTERNAL SINGLE MOUNTING FACILITY

TXBP-032-037B

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961007898184

NSN

5961-00-789-8184

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TXBP-032-037B

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961007898184

NSN

5961-00-789-8184

MFG

CTS ELECTRONIC COMPONENTS CALIFORNIA INC DBA IERC DIV CTS ELECTRONIC COMPONENTS

Description

MATERIAL: COPPER
MOUNTING FACILITY TYPE AND QUANTITY: 1 THREADED STUD SINGLE MOUNTING FACILITY
MOUNTING STUD LENGTH: 0.188 INCHES NOMINAL SINGLE MOUNTING FACILITY
NOMINAL THREAD SIZE: 0.112 INCHES SINGLE MOUNTING FACILITY
OVERALL DIAMETER: 0.375 INCHES NOMINAL
OVERALL LENGTH: 0.370 INCHES NOMINAL
STYLE DESIGNATOR: 3C CYLINDRICAL
THREAD CLASS: 2B SINGLE MOUNTING FACILITY
THREAD QUANTITY PER INCH: 40 SINGLE MOUNTING FACILITY
THREAD SERIES DESIGNATOR: UNC SINGLE MOUNTING FACILITY
THREAD TOLERANCE CLASS: 6H EXTERNAL SINGLE MOUNTING FACILITY

267M0054P003

COVER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961007898585

NSN

5961-00-789-8585

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267M0054P003

COVER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961007898585

NSN

5961-00-789-8585

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

MATERIAL: PLASTIC, POLYETHYLENE
OVERALL DIAMETER: 0.240 INCHES MINIMUM AND 0.270 INCHES MAXIMUM
OVERALL HEIGHT: 0.235 INCHES MINIMUM AND 0.285 INCHES MAXIMUM

447475

TRANSISTOR

NSN, MFG P/N

5961007902440

NSN

5961-00-790-2440

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447475

TRANSISTOR

NSN, MFG P/N

5961007902440

NSN

5961-00-790-2440

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-MINNEAPOLIS

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.274 INCHES MAXIMUM
OVERALL LENGTH: 0.315 INCHES MAXIMUM
OVERALL WIDTH: 0.429 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 750.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC

J23

TRANSISTOR

NSN, MFG P/N

5961007902440

NSN

5961-00-790-2440

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J23

TRANSISTOR

NSN, MFG P/N

5961007902440

NSN

5961-00-790-2440

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.274 INCHES MAXIMUM
OVERALL LENGTH: 0.315 INCHES MAXIMUM
OVERALL WIDTH: 0.429 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 750.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC

342C114H08

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961007904892

NSN

5961-00-790-4892

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342C114H08

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961007904892

NSN

5961-00-790-4892

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

508C516H98

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961007904892

NSN

5961-00-790-4892

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508C516H98

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961007904892

NSN

5961-00-790-4892

MFG

WESTINGHOUSE ELECTRIC CORP