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5961-01-587-4148
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2508410607
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015874148
NSN
5961-01-587-4148
2508410607
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015874148
NSN
5961-01-587-4148
MFG
RS COMPONENTS LIMITED
Description
END ITEM IDENTIFICATION: ROYAL NAVY
INCLOSURE MATERIAL: PLASTIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR DEVICE,DIODE
SPECIAL FEATURES: GLASS PASSIVATED JUNCTION;LOW CAPACITANCE AC SIGNAL PROTECTION;MOLDED CASE;PLASTIC MATERIAL CARRIES U/L RECOGNITION 94 V-0;TERMINALS: AXIAL LEADS
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DT042PRT02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015868457
NSN
5961-01-586-8457
DT042PRT02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015868457
NSN
5961-01-586-8457
MFG
DEUTSCH ENGINEERED CONNECTING DEVICES INC DBA DEFENSE AEROSPACE OPERATIONS DIV DEFENSE AEROSPACE OPERATIONS
Description
SEMICONDUCTOR DEVICE,DIODE
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N9191
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015868640
NSN
5961-01-586-8640
MFG
C. E. NIEHOFF & CO.
Description
RECTIFIER,SEMICONDUCTOR DEVICE
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KFT3381
POTENTIOMETER ASSEM
NSN, MFG P/N
5961015871239
NSN
5961-01-587-1239
MFG
DRS POWER & CONTROL TECHNOLOGIES INC.
Description
POTENTIOMETER ASSEM
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IRFU9024NPBF
TRANSISTOR
NSN, MFG P/N
5961015871361
NSN
5961-01-587-1361
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
TRANSISTOR
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PE8010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015871742
NSN
5961-01-587-1742
MFG
DME CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
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BCP69
TRANSISTOR
NSN, MFG P/N
5961015871859
NSN
5961-01-587-1859
MFG
PHILIPS SEMICONDUCTORS INC
Description
TRANSISTOR
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0735033
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015872322
NSN
5961-01-587-2322
MFG
CENTREVILLE MANUFACTURING INC .
Description
SEMICONDUCTOR DEVICE,DIODE
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07250032
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015872334
NSN
5961-01-587-2334
MFG
CENTREVILLE MANUFACTURING INC .
Description
SEMICONDUCTOR DEVICE,DIODE
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JANTX1N4371AUR1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015872726
NSN
5961-01-587-2726
JANTX1N4371AUR1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015872726
NSN
5961-01-587-2726
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
SEMICONDUCTOR DEVICE,DIODE
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RHRP1560
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015872957
NSN
5961-01-587-2957
MFG
FAIRCHILD SEMICONDUCTOR CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM FORWARD CURRENT, DC AND 30.00 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE AND 200.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -65.0 DEG CELSIUS AMBIENT AIR AND 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
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SK701
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NSN, MFG P/N
5961015873508
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5961-01-587-3508
MFG
R F POLYFET DEVICES INC
Description
TRANSISTOR
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KSP2907A
TRANSISTOR
NSN, MFG P/N
5961015873509
NSN
5961-01-587-3509
MFG
FAIRCHILD SEMICONDUCTOR CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: -600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 MINIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -60.0 MINIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -5.0 MINIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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UF4007
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015873510
NSN
5961-01-587-3510
UF4007
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015873510
NSN
5961-01-587-3510
MFG
FAIRCHILD SEMICONDUCTOR CORPORATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES FORWARD CURRENT, AVERAGE AND 30.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 REPETITIVE PEAK REVERSE VOLTAGE
MOUNTING METHOD: TERMINAL
SPECIAL FEATURES: -65 TO 150 DEG C JUNCTION TEMPERATURE
TERMINAL TYPE AND QUANTITY: 2 WIRE LEAD
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RHRP3060
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015873514
NSN
5961-01-587-3514
MFG
FAIRCHILD SEMICONDUCTOR CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM FORWARD CURRENT, DC AND 70.00 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE AND 325.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
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IRFBG30
TRANSISTOR
NSN, MFG P/N
5961015873518
NSN
5961-01-587-3518
MFG
VISHAY AMERICAS
Description
CURRENT RATING PER CHARACTERISTIC: 3.10 AMPERES MAXIMUM DRAIN CURRENT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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KSP2222A
TRANSISTOR
NSN, MFG P/N
5961015873543
NSN
5961-01-587-3543
MFG
FAIRCHILD SEMICONDUCTOR CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 0.01 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MINIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
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20CTQ150
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015873544
NSN
5961-01-587-3544
20CTQ150
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015873544
NSN
5961-01-587-3544
MFG
VISHAY AMERICAS
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES FORWARD CURRENT, AVERAGE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 REPETITIVE PEAK REVERSE VOLTAGE
MOUNTING METHOD: UNTHREADED HOLE
SPECIAL FEATURES: OPERATION UP TO 175 DEG C JUNCTION TEMPERATURE; CENTER TAP CONFIGURATION; LOW FORWARD VOLTAGE DROP; HIGH FREQUENCY OPERATION; GUARD RING
TERMINAL TYPE AND QUANTITY: 3 PIN
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KM500GA123D
TRANSISTOR
NSN, MFG P/N
5961015873554
NSN
5961-01-587-3554
MFG
SEMIKRON INTL INC
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 AMPERES NOMINAL FORWARD CURRENT, DC
END ITEM IDENTIFICATION: RECTIFIER
INCLOSURE MATERIAL: PLASTIC AND METAL
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 36.5 MILLIMETERS NOMINAL
OVERALL LENGTH: 106.4 MILLIMETERS NOMINAL
OVERALL WIDTH: 61.4 MILLIMETERS NOMINAL
PART NAME ASSIGNED BY CONTROLLING AGENCY: INAVY: TRANSISTOR; CAGE: IGBT MODULE
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ISOLATED COPPER BASEPLATE USING DBC DIRECT COPPER BONDING TECHNOLOGY; MOS INPUT (VOLTAGE CONTROLLED); N CHANNEL, HOMOGENEOUS SI; LOW INDUCTANCE CASE; VERY LOW TAIL CURRENT WITH LOW TEMPERATURE DEPENDENCE; HIGH SHORT CIRCUIT CAPABILITY; LATCH-UP FREE; FAST
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, FEMALE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 NOMINAL EMITTER TO COLLECTOR VOLTAGE, DC
~1: AND SOFT CAL DIODES; LARGE CLEARANCE (12MM) AND CREEPAGE DISTANCES (20MM)
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1.5KE43CA-1N6286CA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015874148
NSN
5961-01-587-4148
1.5KE43CA-1N6286CA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015874148
NSN
5961-01-587-4148
MFG
FAGOR COMMERCIAL INC
Description
END ITEM IDENTIFICATION: ROYAL NAVY
INCLOSURE MATERIAL: PLASTIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR DEVICE,DIODE
SPECIAL FEATURES: GLASS PASSIVATED JUNCTION;LOW CAPACITANCE AC SIGNAL PROTECTION;MOLDED CASE;PLASTIC MATERIAL CARRIES U/L RECOGNITION 94 V-0;TERMINALS: AXIAL LEADS
