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5961-01-511-0985
20 Products
TJSE22701
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015110985
NSN
5961-01-511-0985
MFG
AMPHENOL PCD INC.
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M81714/24-1D001
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-T-81714/24B
OVERALL LENGTH: 2.000 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: DIODE WIRE SPLICE
Related Searches:
1214-300
TRANSISTOR
NSN, MFG P/N
5961015111044
NSN
5961-01-511-1044
MFG
MICROSEMI CORP.-RF POWER PRODUCTS DIV MICROSEMI CORPORATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
POWER RATING PER CHARACTERISTIC: 270.0 WATTS MINIMUM POWER OUTPUT
Related Searches:
6999ED916GR4
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015112282
NSN
5961-01-511-2282
6999ED916GR4
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015112282
NSN
5961-01-511-2282
MFG
DRS POWER & CONTROL TECHNOLOGIES INC.
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 6999ED916GR4
MANUFACTURERS CODE: 27192
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATION
THE MANUFACTURERS DATA:
Related Searches:
6L7646
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015114055
NSN
5961-01-511-4055
MFG
CATERPILLAR INC. DBA CATERPILLAR DIV GOVERNMENTAL AND DEFENSE PRODUCTS
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: RECT KIT
Related Searches:
6L7645
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015114057
NSN
5961-01-511-4057
MFG
CATERPILLAR INC. DBA CATERPILLAR DIV GOVERNMENTAL AND DEFENSE PRODUCTS
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: RECT KIT
Related Searches:
1994592-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015114261
NSN
5961-01-511-4261
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM PEAK PULSE CURRENT
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 WATTS MAXIMUM PEAK PULSE OUTPUT POWER
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.040 INCHES NOMINAL
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 27.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
1N6465
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015114261
NSN
5961-01-511-4261
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM PEAK PULSE CURRENT
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 WATTS MAXIMUM PEAK PULSE OUTPUT POWER
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.040 INCHES NOMINAL
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 27.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
DSEI 2X 61-04C
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015115246
NSN
5961-01-511-5246
DSEI 2X 61-04C
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015115246
NSN
5961-01-511-5246
MFG
IXYS CORPORATION
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 REPETITIVE PEAK REVERSE VOLTAGE
OPERATING TEMP RANGE: -40.0 TO 150.0 DEG CELSIUS
OVERALL LENGTH: 38.2 MILLIMETERS MAXIMUM
OVERALL WIDTH: 25.4 MILLIMETERS MAXIMUM
SPECIAL FEATURES: FAST RECOVERY EPITAXIAL DIODE (FRED)
Related Searches:
1858-0113
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015115436
NSN
5961-01-511-5436
1858-0113
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015115436
NSN
5961-01-511-5436
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
III END ITEM IDENTIFICATION: 6625-01-471-1418; GENERAL PURPOSE ELEC. TEST EQUIP. GPETE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: PNP MULTI-CHIP GENERAL PURPOSE AMPLIFIER
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOIC-16
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 1000.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
SPECIAL FEATURES: CONFIGURED IN A DIP PACKAGE, GULL WING LEADS
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC ALL TRANSISTOR
Related Searches:
MMPQ2907A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015115436
NSN
5961-01-511-5436
MMPQ2907A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015115436
NSN
5961-01-511-5436
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
III END ITEM IDENTIFICATION: 6625-01-471-1418; GENERAL PURPOSE ELEC. TEST EQUIP. GPETE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: PNP MULTI-CHIP GENERAL PURPOSE AMPLIFIER
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOIC-16
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 1000.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
SPECIAL FEATURES: CONFIGURED IN A DIP PACKAGE, GULL WING LEADS
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC ALL TRANSISTOR
Related Searches:
1855-0769
TRANSISTOR
NSN, MFG P/N
5961015115754
NSN
5961-01-511-5754
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
III END ITEM IDENTIFICATION: 6625-01-471-1418; GEN PURPOSE ELEC TEST EQUIP GPETE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: GAAS, FET
INTERNAL CONFIGURATION: FIELD EFFECT
Related Searches:
1853-0612
TRANSISTOR
NSN, MFG P/N
5961015115965
NSN
5961-01-511-5965
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
III END ITEM IDENTIFICATION: 6625-01-471-1418; GEN PURPOSE ELEC TEST EQUIP GPETE
INTERNAL JUNCTION CONFIGURATION: PNP
Related Searches:
1906-0446
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015116064
NSN
5961-01-511-6064
1906-0446
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015116064
NSN
5961-01-511-6064
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
III END ITEM IDENTIFICATION: 6625-01-471-1418; GEN PURPOSE ELECTRONIC TEST EQUIP GPETE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DUAL DIODE
Related Searches:
1900-0322
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015116395
NSN
5961-01-511-6395
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
III END ITEM IDENTIFICATION: 6625-01-471-1418; GEN PURPOSE ELECT TEST EQUIP GPETE
Related Searches:
MUR4100E
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015118662
NSN
5961-01-511-8662
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES NOMINAL FORWARD CURRENT, AVERAGE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SWITCHMODE POWER RECTIFIER
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 4.80 MILLIMETERS MINIMUM AND 5.30 MILLIMETERS MAXIMUM
OVERALL HEIGHT: 1.20 MILLIMETERS MINIMUM AND 1.30 MILLIMETERS MAXIMUM
OVERALL LENGTH: 58.10 MILLIMETERS MINIMUM AND 60.30 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: LEAD SELENIDE
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
MMSZ5255B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015120448
NSN
5961-01-512-0448
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
CURRENT RATING PER CHARACTERISTIC: 44.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
III END ITEM IDENTIFICATION: ARC 169 SOLID
III PART NAME ASSIGNED BY CONTROLLING AGENCY: ZENER VOLTAGE REGULATOR
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.9 MILLIMETERS MINIMUM AND 1.3 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.5 MILLIMETERS MINIMUM AND 2.8 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.4 MILLIMETERS MINIMUM AND 1.8 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM AVERAGE OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 NOMINAL REGULATOR VOLTAGE, DC
Related Searches:
MMSZ5255BT1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015120448
NSN
5961-01-512-0448
MMSZ5255BT1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015120448
NSN
5961-01-512-0448
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 44.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
III END ITEM IDENTIFICATION: ARC 169 SOLID
III PART NAME ASSIGNED BY CONTROLLING AGENCY: ZENER VOLTAGE REGULATOR
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.9 MILLIMETERS MINIMUM AND 1.3 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.5 MILLIMETERS MINIMUM AND 2.8 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.4 MILLIMETERS MINIMUM AND 1.8 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM AVERAGE OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 NOMINAL REGULATOR VOLTAGE, DC
Related Searches:
MMSZ5231BT1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015120483
NSN
5961-01-512-0483
MMSZ5231BT1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015120483
NSN
5961-01-512-0483
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
III END ITEM IDENTIFICATION: ARC 169 SOLID
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SURFACE MOUNT SILICON ZENER DIODE
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.9 MILLIMETERS MINIMUM AND 1.3 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.5 MILLIMETERS MINIMUM AND 2.8 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.4 MILLIMETERS MINIMUM AND 1.8 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM AVERAGE OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 NOMINAL REGULATOR VOLTAGE, DC
Related Searches:
356A1451P71
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015120563
NSN
5961-01-512-0563
356A1451P71
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015120563
NSN
5961-01-512-0563
MFG
BAE SYSTEMS CONTROLS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
III END ITEM IDENTIFICATION: ARC 169 SOLID
III PART NAME ASSIGNED BY CONTROLLING AGENCY: ZENER VOLTAGE REGULATOR
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.9 MILLIMETERS MINIMUM AND 1.3 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.5 MILLIMETERS MINIMUM AND 2.8 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.4 MILLIMETERS MINIMUM AND 1.8 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS MAXIMUM AVERAGE OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.7 NOMINAL REGULATOR VOLTAGE, DC
Related Searches:
MMBZ5230BL
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015120563
NSN
5961-01-512-0563
MMBZ5230BL
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015120563
NSN
5961-01-512-0563
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
III END ITEM IDENTIFICATION: ARC 169 SOLID
III PART NAME ASSIGNED BY CONTROLLING AGENCY: ZENER VOLTAGE REGULATOR
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.9 MILLIMETERS MINIMUM AND 1.3 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.5 MILLIMETERS MINIMUM AND 2.8 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.4 MILLIMETERS MINIMUM AND 1.8 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS MAXIMUM AVERAGE OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.7 NOMINAL REGULATOR VOLTAGE, DC
