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5961-01-511-0985

20 Products

TJSE22701

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015110985

NSN

5961-01-511-0985

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TJSE22701

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015110985

NSN

5961-01-511-0985

MFG

AMPHENOL PCD INC.

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M81714/24-1D001
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-T-81714/24B
OVERALL LENGTH: 2.000 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: DIODE WIRE SPLICE

1214-300

TRANSISTOR

NSN, MFG P/N

5961015111044

NSN

5961-01-511-1044

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1214-300

TRANSISTOR

NSN, MFG P/N

5961015111044

NSN

5961-01-511-1044

MFG

MICROSEMI CORP.-RF POWER PRODUCTS DIV MICROSEMI CORPORATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
POWER RATING PER CHARACTERISTIC: 270.0 WATTS MINIMUM POWER OUTPUT

6999ED916GR4

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961015112282

NSN

5961-01-511-2282

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6999ED916GR4

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961015112282

NSN

5961-01-511-2282

MFG

DRS POWER & CONTROL TECHNOLOGIES INC.

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 6999ED916GR4
MANUFACTURERS CODE: 27192
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATION
THE MANUFACTURERS DATA:

6L7646

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015114055

NSN

5961-01-511-4055

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6L7646

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015114055

NSN

5961-01-511-4055

MFG

CATERPILLAR INC. DBA CATERPILLAR DIV GOVERNMENTAL AND DEFENSE PRODUCTS

6L7645

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015114057

NSN

5961-01-511-4057

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6L7645

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015114057

NSN

5961-01-511-4057

MFG

CATERPILLAR INC. DBA CATERPILLAR DIV GOVERNMENTAL AND DEFENSE PRODUCTS

1994592-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015114261

NSN

5961-01-511-4261

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1994592-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015114261

NSN

5961-01-511-4261

MFG

RAYTHEON COMPANY

Description

CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM PEAK PULSE CURRENT
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 WATTS MAXIMUM PEAK PULSE OUTPUT POWER
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.040 INCHES NOMINAL
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 27.0 MINIMUM BREAKDOWN VOLTAGE, DC

1N6465

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015114261

NSN

5961-01-511-4261

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1N6465

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015114261

NSN

5961-01-511-4261

MFG

MICRO USPD INC

Description

CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM PEAK PULSE CURRENT
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 WATTS MAXIMUM PEAK PULSE OUTPUT POWER
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.040 INCHES NOMINAL
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 27.0 MINIMUM BREAKDOWN VOLTAGE, DC

DSEI 2X 61-04C

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015115246

NSN

5961-01-511-5246

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DSEI 2X 61-04C

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015115246

NSN

5961-01-511-5246

MFG

IXYS CORPORATION

Description

ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 REPETITIVE PEAK REVERSE VOLTAGE
OPERATING TEMP RANGE: -40.0 TO 150.0 DEG CELSIUS
OVERALL LENGTH: 38.2 MILLIMETERS MAXIMUM
OVERALL WIDTH: 25.4 MILLIMETERS MAXIMUM
SPECIAL FEATURES: FAST RECOVERY EPITAXIAL DIODE (FRED)

1858-0113

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961015115436

NSN

5961-01-511-5436

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1858-0113

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961015115436

NSN

5961-01-511-5436

MFG

AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER

Description

COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
III END ITEM IDENTIFICATION: 6625-01-471-1418; GENERAL PURPOSE ELEC. TEST EQUIP. GPETE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: PNP MULTI-CHIP GENERAL PURPOSE AMPLIFIER
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOIC-16
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 1000.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
SPECIAL FEATURES: CONFIGURED IN A DIP PACKAGE, GULL WING LEADS
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC ALL TRANSISTOR

MMPQ2907A

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961015115436

NSN

5961-01-511-5436

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MMPQ2907A

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961015115436

NSN

5961-01-511-5436

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
III END ITEM IDENTIFICATION: 6625-01-471-1418; GENERAL PURPOSE ELEC. TEST EQUIP. GPETE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: PNP MULTI-CHIP GENERAL PURPOSE AMPLIFIER
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOIC-16
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 1000.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
SPECIAL FEATURES: CONFIGURED IN A DIP PACKAGE, GULL WING LEADS
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC ALL TRANSISTOR

1855-0769

TRANSISTOR

NSN, MFG P/N

5961015115754

NSN

5961-01-511-5754

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1855-0769

TRANSISTOR

NSN, MFG P/N

5961015115754

NSN

5961-01-511-5754

MFG

AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER

Description

III END ITEM IDENTIFICATION: 6625-01-471-1418; GEN PURPOSE ELEC TEST EQUIP GPETE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: GAAS, FET
INTERNAL CONFIGURATION: FIELD EFFECT

1853-0612

TRANSISTOR

NSN, MFG P/N

5961015115965

NSN

5961-01-511-5965

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1853-0612

TRANSISTOR

NSN, MFG P/N

5961015115965

NSN

5961-01-511-5965

MFG

AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER

Description

III END ITEM IDENTIFICATION: 6625-01-471-1418; GEN PURPOSE ELEC TEST EQUIP GPETE
INTERNAL JUNCTION CONFIGURATION: PNP

1906-0446

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961015116064

NSN

5961-01-511-6064

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1906-0446

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961015116064

NSN

5961-01-511-6064

MFG

AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER

Description

III END ITEM IDENTIFICATION: 6625-01-471-1418; GEN PURPOSE ELECTRONIC TEST EQUIP GPETE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DUAL DIODE

1900-0322

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015116395

NSN

5961-01-511-6395

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1900-0322

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015116395

NSN

5961-01-511-6395

MFG

AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER

Description

III END ITEM IDENTIFICATION: 6625-01-471-1418; GEN PURPOSE ELECT TEST EQUIP GPETE

MUR4100E

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015118662

NSN

5961-01-511-8662

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MUR4100E

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015118662

NSN

5961-01-511-8662

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES NOMINAL FORWARD CURRENT, AVERAGE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SWITCHMODE POWER RECTIFIER
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 4.80 MILLIMETERS MINIMUM AND 5.30 MILLIMETERS MAXIMUM
OVERALL HEIGHT: 1.20 MILLIMETERS MINIMUM AND 1.30 MILLIMETERS MAXIMUM
OVERALL LENGTH: 58.10 MILLIMETERS MINIMUM AND 60.30 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: LEAD SELENIDE
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE

MMSZ5255B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015120448

NSN

5961-01-512-0448

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MMSZ5255B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015120448

NSN

5961-01-512-0448

MFG

SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS

Description

CURRENT RATING PER CHARACTERISTIC: 44.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
III END ITEM IDENTIFICATION: ARC 169 SOLID
III PART NAME ASSIGNED BY CONTROLLING AGENCY: ZENER VOLTAGE REGULATOR
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.9 MILLIMETERS MINIMUM AND 1.3 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.5 MILLIMETERS MINIMUM AND 2.8 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.4 MILLIMETERS MINIMUM AND 1.8 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM AVERAGE OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 NOMINAL REGULATOR VOLTAGE, DC

MMSZ5255BT1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015120448

NSN

5961-01-512-0448

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MMSZ5255BT1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015120448

NSN

5961-01-512-0448

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 44.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
III END ITEM IDENTIFICATION: ARC 169 SOLID
III PART NAME ASSIGNED BY CONTROLLING AGENCY: ZENER VOLTAGE REGULATOR
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.9 MILLIMETERS MINIMUM AND 1.3 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.5 MILLIMETERS MINIMUM AND 2.8 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.4 MILLIMETERS MINIMUM AND 1.8 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM AVERAGE OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 NOMINAL REGULATOR VOLTAGE, DC

MMSZ5231BT1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015120483

NSN

5961-01-512-0483

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MMSZ5231BT1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015120483

NSN

5961-01-512-0483

MFG

SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
III END ITEM IDENTIFICATION: ARC 169 SOLID
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SURFACE MOUNT SILICON ZENER DIODE
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.9 MILLIMETERS MINIMUM AND 1.3 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.5 MILLIMETERS MINIMUM AND 2.8 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.4 MILLIMETERS MINIMUM AND 1.8 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM AVERAGE OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 NOMINAL REGULATOR VOLTAGE, DC

356A1451P71

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015120563

NSN

5961-01-512-0563

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356A1451P71

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015120563

NSN

5961-01-512-0563

MFG

BAE SYSTEMS CONTROLS INC.

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
III END ITEM IDENTIFICATION: ARC 169 SOLID
III PART NAME ASSIGNED BY CONTROLLING AGENCY: ZENER VOLTAGE REGULATOR
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.9 MILLIMETERS MINIMUM AND 1.3 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.5 MILLIMETERS MINIMUM AND 2.8 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.4 MILLIMETERS MINIMUM AND 1.8 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS MAXIMUM AVERAGE OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.7 NOMINAL REGULATOR VOLTAGE, DC

MMBZ5230BL

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015120563

NSN

5961-01-512-0563

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MMBZ5230BL

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015120563

NSN

5961-01-512-0563

MFG

SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
III END ITEM IDENTIFICATION: ARC 169 SOLID
III PART NAME ASSIGNED BY CONTROLLING AGENCY: ZENER VOLTAGE REGULATOR
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.9 MILLIMETERS MINIMUM AND 1.3 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.5 MILLIMETERS MINIMUM AND 2.8 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.4 MILLIMETERS MINIMUM AND 1.8 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS MAXIMUM AVERAGE OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.7 NOMINAL REGULATOR VOLTAGE, DC