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5961-01-460-1555
20 Products
R6011430XXYJ
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014601555
NSN
5961-01-460-1555
R6011430XXYJ
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014601555
NSN
5961-01-460-1555
MFG
POWEREX INC
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MINIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 300.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DESIGN CONTROL REFERENCE: R6011430XXYJ
III END ITEM IDENTIFICATION: MAIN GENERATOR, PART NUMBER F2216AAG01 ABOARD 420 FT WAGB COAST GUARD VESSELS
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 66844
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1400.0 MINIMUM NOMINAL REGULATOR VOLTAGE AND 2600.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
MMBT918L
TRANSISTOR
NSN, MFG P/N
5961014599445
NSN
5961-01-459-9445
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: FY92/93ANG TK
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.047 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.024 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
312A4624P1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014599461
NSN
5961-01-459-9461
312A4624P1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014599461
NSN
5961-01-459-9461
MFG
BAE SYSTEMS CONTROLS INC.
Description
III END ITEM IDENTIFICATION: F110-100/129
Related Searches:
MUR405
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014599476
NSN
5961-01-459-9476
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 50-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
III END ITEM IDENTIFICATION: MYK-17
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.380 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 NOMINAL REVERSE VOLTAGE, PEAK
Related Searches:
DB107
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014599548
NSN
5961-01-459-9548
MFG
DIODES INC POWER COMPONENTS DIV
Description
III END ITEM IDENTIFICATION: DRYING/STOR. E/I FSCM 18041
Related Searches:
SDR506
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014599554
NSN
5961-01-459-9554
MFG
SOLID STATE DEVICES INC.
Description
III END ITEM IDENTIFICATION: JOINT STRS RD E/I FSCM 30043
Related Searches:
MJD2955
TRANSISTOR
NSN, MFG P/N
5961014599560
NSN
5961-01-459-9560
MFG
FREESCALE SEMICONDUCTOR INC.
Description
III END ITEM IDENTIFICATION: SVD MOD1 NAV E/I FSCM 04713
Related Searches:
M1168
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014599772
NSN
5961-01-459-9772
MFG
MOTOR APPLIANCE CORP
Description
III END ITEM IDENTIFICATION: BATTERY CHARGE E/I FSCM 10404
Related Searches:
JANTX1N6527
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014599776
NSN
5961-01-459-9776
JANTX1N6527
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014599776
NSN
5961-01-459-9776
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 5.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6527
III END ITEM IDENTIFICATION: ELECTRICAL E/I FSCM 81349
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/576
OVERALL DIAMETER: 0.170 INCHES MAXIMUM
OVERALL LENGTH: 0.320 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10000.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
DC215229630
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014599934
NSN
5961-01-459-9934
DC215229630
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014599934
NSN
5961-01-459-9934
MFG
NAVAL SEA SYSTEMS COMMAND
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: DC215229630
MANUFACTURERS CODE: 53711
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVAL INVENTORY CONTROL POINT, MECHANICSBURG, ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
2708157-1
TRANSISTOR
NSN, MFG P/N
5961014600448
NSN
5961-01-460-0448
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - TORRANCE
Description
III END ITEM IDENTIFICATION: 2708157-1 E/I FSCM 70210
Related Searches:
UES806RHR2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014600458
NSN
5961-01-460-0458
UES806RHR2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014600458
NSN
5961-01-460-0458
MFG
MICRO USPD INC
Description
III END ITEM IDENTIFICATION: UES806RHR2 E/I FSCM12969
Related Searches:
271186-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014600907
NSN
5961-01-460-0907
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - TORRANCE
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 AMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: E/I FSCM 04713
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.120 INCHES MAXIMUM
OVERALL WIDTH: 0.098 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 NOMINAL FORWARD VOLTAGE, DC
Related Searches:
382222-1
TRANSISTOR
NSN, MFG P/N
5961014600915
NSN
5961-01-460-0915
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 1.80 AMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: REC/TRANSMITT
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: BRACKET
OVERALL LENGTH: 0.744 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM DRAIN SUPPLY VOLTAGE AND 70.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 30.0 MAXIMUM GATE VOLTAGE, DC
Related Searches:
F2003
TRANSISTOR
NSN, MFG P/N
5961014600915
NSN
5961-01-460-0915
MFG
R F POLYFET DEVICES INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 1.80 AMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: REC/TRANSMITT
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: BRACKET
OVERALL LENGTH: 0.744 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM DRAIN SUPPLY VOLTAGE AND 70.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 30.0 MAXIMUM GATE VOLTAGE, DC
Related Searches:
353-8133-040
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014600995
NSN
5961-01-460-0995
353-8133-040
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014600995
NSN
5961-01-460-0995
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: HFRR
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.120 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.9 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
MMBZ5229
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014600995
NSN
5961-01-460-0995
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: HFRR
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.120 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.9 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
103-2505-001
TRANSISTOR
NSN, MFG P/N
5961014601043
NSN
5961-01-460-1043
MFG
BELL INDUSTRIES INC
Description
III END ITEM IDENTIFICATION: VISUAL DISPLAY UNIT
Related Searches:
BF298
TRANSISTOR
NSN, MFG P/N
5961014601415
NSN
5961-01-460-1415
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
TRANSISTOR
Related Searches:
R6001430XXYJ
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014601551
NSN
5961-01-460-1551
R6001430XXYJ
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014601551
NSN
5961-01-460-1551
MFG
POWEREX INC
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MINIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 300.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DESIGN CONTROL REFERENCE: R6001430XXYJ
III END ITEM IDENTIFICATION: MAIN GENERATOR, PART NUMBER F2216AAG01 ABOARD 420 FT WAGB COAST GUARD VESSELS
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 66844
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1400.0 MINIMUM NOMINAL REGULATOR VOLTAGE AND 2600.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
