My Quote Request
5961-01-449-1357
20 Products
JANTX1N6521
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014491357
NSN
5961-01-449-1357
JANTX1N6521
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014491357
NSN
5961-01-449-1357
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6521
III END ITEM IDENTIFICATION: 2350-01-328-5964
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/576
OVERALL DIAMETER: 0.100 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.220 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/576 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2000.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
8B397 SMA-2A(100/140)
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014492839
NSN
5961-01-449-2839
8B397 SMA-2A(100/140)
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014492839
NSN
5961-01-449-2839
MFG
U S DEPT OF TRANSPORTATION FEDERAL AVIATION ADMINISTRATION
Description
III END ITEM IDENTIFICATION: AIRPORT SURVEILLANCE DETECTION EQUIPMENT 3(ASDE3)
Related Searches:
1A354 SMA-2A(100/140)
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014492844
NSN
5961-01-449-2844
1A354 SMA-2A(100/140)
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014492844
NSN
5961-01-449-2844
MFG
U S DEPT OF TRANSPORTATION FEDERAL AVIATION ADMINISTRATION
Description
III END ITEM IDENTIFICATION: ASDE3
Related Searches:
1A301 SMA-2A(100/140)
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014492846
NSN
5961-01-449-2846
1A301 SMA-2A(100/140)
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014492846
NSN
5961-01-449-2846
MFG
U S DEPT OF TRANSPORTATION FEDERAL AVIATION ADMINISTRATION
Description
III END ITEM IDENTIFICATION: ASDE3
Related Searches:
138001PC59
TRANSISTOR
NSN, MFG P/N
5961014493203
NSN
5961-01-449-3203
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MISSILES AND FIRE CONTROL - ARCHBALD
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 138121-1
MANUFACTURERS CODE: 94271
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
IRKT162/06
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014493296
NSN
5961-01-449-3296
IRKT162/06
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014493296
NSN
5961-01-449-3296
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 160.00 AMPERES NOMINAL ON-STATE CURRENT, DC
INCLOSURE MATERIAL: METAL
SPECIAL FEATURES: CURRENT SOURCE INVERTER; HI VOLTAGE; ISOLATED BASE PLATE
TERMINAL TYPE AND QUANTITY: 3 TAB W/SCREW
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
357-0030
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014493310
NSN
5961-01-449-3310
MFG
ONAN CORPORATION DBA CUMMINS POWER GENERATION
Description
III END ITEM IDENTIFICATION: USED ON GENERATOR
Related Searches:
DVH6740-09
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014493469
NSN
5961-01-449-3469
DVH6740-09
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014493469
NSN
5961-01-449-3469
MFG
SKYWORKS SOLUTIONS INC.
Description
III END ITEM IDENTIFICATION: C-17A ACFT
Related Searches:
JANTX1N4101D-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014493484
NSN
5961-01-449-3484
JANTX1N4101D-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014493484
NSN
5961-01-449-3484
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4101D-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
III END ITEM IDENTIFICATION: ELECTRICAL
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/435
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: DASH ONE SUFFIX INDICATES METALLURGICAL BOND
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/435 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAG
Related Searches:
11472559-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014493486
NSN
5961-01-449-3486
11472559-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014493486
NSN
5961-01-449-3486
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
III END ITEM IDENTIFICATION: 1430-01-418-4396 (PATRIOT)
Related Searches:
SDA2500UF
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014493486
NSN
5961-01-449-3486
MFG
SOLID STATE DEVICES INC.
Description
III END ITEM IDENTIFICATION: 1430-01-418-4396 (PATRIOT)
Related Searches:
SEN-B-1999
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014493486
NSN
5961-01-449-3486
SEN-B-1999
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014493486
NSN
5961-01-449-3486
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
III END ITEM IDENTIFICATION: 1430-01-418-4396 (PATRIOT)
Related Searches:
12272699
TRANSISTOR
NSN, MFG P/N
5961014495393
NSN
5961-01-449-5393
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
III END ITEM IDENTIFICATION: 2350-01-328-5964
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 12272699
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 2 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 225.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
Related Searches:
2N6233
TRANSISTOR
NSN, MFG P/N
5961014495393
NSN
5961-01-449-5393
MFG
FREESCALE SEMICONDUCTOR INC.
Description
III END ITEM IDENTIFICATION: 2350-01-328-5964
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 12272699
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 2 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 225.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
Related Searches:
STA4527
TRANSISTOR
NSN, MFG P/N
5961014495393
NSN
5961-01-449-5393
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
III END ITEM IDENTIFICATION: 2350-01-328-5964
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 12272699
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 2 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 225.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
Related Searches:
381492-36
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014495403
NSN
5961-01-449-5403
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
III END ITEM IDENTIFICATION: ARC-164 & ACR-222 APACHE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS AMBIENT AIR AND 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.100 INCHES MINIMUM AND 0.112 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0A MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NEXT ASSY: 724542
TERMINAL TYPE AND QUANTITY: 2 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 34.2 MINIMUM REGULATOR VOLTAGE, DC AND 37.8 MAXIMUM REGULATOR VOLTAGE, DC
Related Searches:
MMSZ5256B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014495403
NSN
5961-01-449-5403
MFG
FREESCALE SEMICONDUCTOR INC.
Description
III END ITEM IDENTIFICATION: ARC-164 & ACR-222 APACHE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS AMBIENT AIR AND 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.100 INCHES MINIMUM AND 0.112 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0A MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NEXT ASSY: 724542
TERMINAL TYPE AND QUANTITY: 2 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 34.2 MINIMUM REGULATOR VOLTAGE, DC AND 37.8 MAXIMUM REGULATOR VOLTAGE, DC
Related Searches:
MMSZ5256BTI
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014495403
NSN
5961-01-449-5403
MMSZ5256BTI
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014495403
NSN
5961-01-449-5403
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
III END ITEM IDENTIFICATION: ARC-164 & ACR-222 APACHE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS AMBIENT AIR AND 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.100 INCHES MINIMUM AND 0.112 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0A MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NEXT ASSY: 724542
TERMINAL TYPE AND QUANTITY: 2 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 34.2 MINIMUM REGULATOR VOLTAGE, DC AND 37.8 MAXIMUM REGULATOR VOLTAGE, DC
Related Searches:
353-8126-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014495404
NSN
5961-01-449-5404
353-8126-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014495404
NSN
5961-01-449-5404
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 500.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE
III END ITEM IDENTIFICATION: AN/SSQ-77A, ARC-222 & ARC-164 APACHE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.033 INCHES MINIMUM AND 0.047 INCHES MAXIMUM
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
OVERALL WIDTH: 0.083 INCHES MINIMUM AND 0.098 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: COMMON CATHODE
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
647461-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014495404
NSN
5961-01-449-5404
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 500.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE
III END ITEM IDENTIFICATION: AN/SSQ-77A, ARC-222 & ARC-164 APACHE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.033 INCHES MINIMUM AND 0.047 INCHES MAXIMUM
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
OVERALL WIDTH: 0.083 INCHES MINIMUM AND 0.098 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: COMMON CATHODE
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM REVERSE VOLTAGE, PEAK