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5961-01-449-1357

20 Products

JANTX1N6521

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014491357

NSN

5961-01-449-1357

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JANTX1N6521

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014491357

NSN

5961-01-449-1357

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6521
III END ITEM IDENTIFICATION: 2350-01-328-5964
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/576
OVERALL DIAMETER: 0.100 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.220 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/576 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2000.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE

8B397 SMA-2A(100/140)

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014492839

NSN

5961-01-449-2839

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8B397 SMA-2A(100/140)

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014492839

NSN

5961-01-449-2839

MFG

U S DEPT OF TRANSPORTATION FEDERAL AVIATION ADMINISTRATION

Description

III END ITEM IDENTIFICATION: AIRPORT SURVEILLANCE DETECTION EQUIPMENT 3(ASDE3)

1A354 SMA-2A(100/140)

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014492844

NSN

5961-01-449-2844

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1A354 SMA-2A(100/140)

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014492844

NSN

5961-01-449-2844

MFG

U S DEPT OF TRANSPORTATION FEDERAL AVIATION ADMINISTRATION

1A301 SMA-2A(100/140)

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014492846

NSN

5961-01-449-2846

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1A301 SMA-2A(100/140)

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014492846

NSN

5961-01-449-2846

MFG

U S DEPT OF TRANSPORTATION FEDERAL AVIATION ADMINISTRATION

138001PC59

TRANSISTOR

NSN, MFG P/N

5961014493203

NSN

5961-01-449-3203

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138001PC59

TRANSISTOR

NSN, MFG P/N

5961014493203

NSN

5961-01-449-3203

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MISSILES AND FIRE CONTROL - ARCHBALD

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 138121-1
MANUFACTURERS CODE: 94271
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:

IRKT162/06

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961014493296

NSN

5961-01-449-3296

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IRKT162/06

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961014493296

NSN

5961-01-449-3296

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

CURRENT RATING PER CHARACTERISTIC: 160.00 AMPERES NOMINAL ON-STATE CURRENT, DC
INCLOSURE MATERIAL: METAL
SPECIAL FEATURES: CURRENT SOURCE INVERTER; HI VOLTAGE; ISOLATED BASE PLATE
TERMINAL TYPE AND QUANTITY: 3 TAB W/SCREW
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE

357-0030

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014493310

NSN

5961-01-449-3310

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357-0030

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014493310

NSN

5961-01-449-3310

MFG

ONAN CORPORATION DBA CUMMINS POWER GENERATION

DVH6740-09

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014493469

NSN

5961-01-449-3469

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DVH6740-09

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014493469

NSN

5961-01-449-3469

MFG

SKYWORKS SOLUTIONS INC.

JANTX1N4101D-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014493484

NSN

5961-01-449-3484

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JANTX1N4101D-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014493484

NSN

5961-01-449-3484

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4101D-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
III END ITEM IDENTIFICATION: ELECTRICAL
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/435
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: DASH ONE SUFFIX INDICATES METALLURGICAL BOND
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/435 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAG

11472559-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014493486

NSN

5961-01-449-3486

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11472559-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014493486

NSN

5961-01-449-3486

MFG

U S ARMY AVIATION AND MISSILE COMMAND

SDA2500UF

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014493486

NSN

5961-01-449-3486

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SDA2500UF

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014493486

NSN

5961-01-449-3486

MFG

SOLID STATE DEVICES INC.

SEN-B-1999

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014493486

NSN

5961-01-449-3486

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SEN-B-1999

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014493486

NSN

5961-01-449-3486

MFG

RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR

12272699

TRANSISTOR

NSN, MFG P/N

5961014495393

NSN

5961-01-449-5393

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12272699

TRANSISTOR

NSN, MFG P/N

5961014495393

NSN

5961-01-449-5393

MFG

U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND

Description

III END ITEM IDENTIFICATION: 2350-01-328-5964
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 12272699
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 2 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 225.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN

2N6233

TRANSISTOR

NSN, MFG P/N

5961014495393

NSN

5961-01-449-5393

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2N6233

TRANSISTOR

NSN, MFG P/N

5961014495393

NSN

5961-01-449-5393

MFG

FREESCALE SEMICONDUCTOR INC.

Description

III END ITEM IDENTIFICATION: 2350-01-328-5964
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 12272699
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 2 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 225.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN

STA4527

TRANSISTOR

NSN, MFG P/N

5961014495393

NSN

5961-01-449-5393

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STA4527

TRANSISTOR

NSN, MFG P/N

5961014495393

NSN

5961-01-449-5393

MFG

SILICON TRANSISTOR CORP SUB OF BBF INC

Description

III END ITEM IDENTIFICATION: 2350-01-328-5964
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 12272699
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 2 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 225.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN

381492-36

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014495403

NSN

5961-01-449-5403

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381492-36

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014495403

NSN

5961-01-449-5403

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

III END ITEM IDENTIFICATION: ARC-164 & ACR-222 APACHE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS AMBIENT AIR AND 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.100 INCHES MINIMUM AND 0.112 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0A MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NEXT ASSY: 724542
TERMINAL TYPE AND QUANTITY: 2 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 34.2 MINIMUM REGULATOR VOLTAGE, DC AND 37.8 MAXIMUM REGULATOR VOLTAGE, DC

MMSZ5256B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014495403

NSN

5961-01-449-5403

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MMSZ5256B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014495403

NSN

5961-01-449-5403

MFG

FREESCALE SEMICONDUCTOR INC.

Description

III END ITEM IDENTIFICATION: ARC-164 & ACR-222 APACHE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS AMBIENT AIR AND 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.100 INCHES MINIMUM AND 0.112 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0A MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NEXT ASSY: 724542
TERMINAL TYPE AND QUANTITY: 2 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 34.2 MINIMUM REGULATOR VOLTAGE, DC AND 37.8 MAXIMUM REGULATOR VOLTAGE, DC

MMSZ5256BTI

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014495403

NSN

5961-01-449-5403

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MMSZ5256BTI

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014495403

NSN

5961-01-449-5403

MFG

SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS

Description

III END ITEM IDENTIFICATION: ARC-164 & ACR-222 APACHE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS AMBIENT AIR AND 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.100 INCHES MINIMUM AND 0.112 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0A MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NEXT ASSY: 724542
TERMINAL TYPE AND QUANTITY: 2 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 34.2 MINIMUM REGULATOR VOLTAGE, DC AND 37.8 MAXIMUM REGULATOR VOLTAGE, DC

353-8126-010

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014495404

NSN

5961-01-449-5404

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353-8126-010

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014495404

NSN

5961-01-449-5404

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 500.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE
III END ITEM IDENTIFICATION: AN/SSQ-77A, ARC-222 & ARC-164 APACHE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.033 INCHES MINIMUM AND 0.047 INCHES MAXIMUM
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
OVERALL WIDTH: 0.083 INCHES MINIMUM AND 0.098 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: COMMON CATHODE
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM REVERSE VOLTAGE, PEAK

647461-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014495404

NSN

5961-01-449-5404

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647461-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014495404

NSN

5961-01-449-5404

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 500.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE
III END ITEM IDENTIFICATION: AN/SSQ-77A, ARC-222 & ARC-164 APACHE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.033 INCHES MINIMUM AND 0.047 INCHES MAXIMUM
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
OVERALL WIDTH: 0.083 INCHES MINIMUM AND 0.098 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: COMMON CATHODE
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM REVERSE VOLTAGE, PEAK