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5961-01-414-9476
20 Products
1M14ZS5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014149476
NSN
5961-01-414-9476
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
MA4E282-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014148641
NSN
5961-01-414-8641
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
INCLOSURE MATERIAL: GLASS
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
MA4P789ST
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014148645
NSN
5961-01-414-8645
MA4P789ST
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014148645
NSN
5961-01-414-8645
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
CAPACITANCE RATING IN PICOFARADS: 0.35 NOMINAL ALL SEMICONDUCTOR DEVICE DIODE
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.034 INCHES MINIMUM
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
OVERALL WIDTH: 0.083 INCHES MINIMUM AND 0.098 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
MMBTH10L
TRANSISTOR
NSN, MFG P/N
5961014149168
NSN
5961-01-414-9168
MFG
FREESCALE SEMICONDUCTOR INC.
Description
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-236AB
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 25.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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MMBR911
TRANSISTOR
NSN, MFG P/N
5961014149169
NSN
5961-01-414-9169
MFG
FREESCALE SEMICONDUCTOR INC.
Description
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-236AB
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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MMBD7000L
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014149170
NSN
5961-01-414-9170
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 500.00 MILLIAMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-236AB
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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647462-14
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014149171
NSN
5961-01-414-9171
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-236AB
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.2 NOMINAL REGULATOR VOLTAGE, DC
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MMBZ5237BL
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014149171
NSN
5961-01-414-9171
MMBZ5237BL
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014149171
NSN
5961-01-414-9171
MFG
FREESCALE SEMICONDUCTOR INC.
Description
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-236AB
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.2 NOMINAL REGULATOR VOLTAGE, DC
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MMBV432L
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014149172
NSN
5961-01-414-9172
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-236AB
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 350.0 MICROWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 14.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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MMBR5179L
TRANSISTOR
NSN, MFG P/N
5961014149173
NSN
5961-01-414-9173
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-236AB
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 2.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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742676
TRANSISTOR
NSN, MFG P/N
5961014149176
NSN
5961-01-414-9176
MFG
FLUKE CORPORATION
Description
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-236AB
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.89 MILLIMETERS MINIMUM AND 1.11 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.80 MILLIMETERS MINIMUM AND 3.04 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.10 MILLIMETERS MINIMUM AND 2.50 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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MMBT3904L
TRANSISTOR
NSN, MFG P/N
5961014149176
NSN
5961-01-414-9176
MFG
FREESCALE SEMICONDUCTOR INC.
Description
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-236AB
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.89 MILLIMETERS MINIMUM AND 1.11 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.80 MILLIMETERS MINIMUM AND 3.04 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.10 MILLIMETERS MINIMUM AND 2.50 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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MMBV105GL
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014149177
NSN
5961-01-414-9177
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-236AB
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
MMBV105GLT1G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014149177
NSN
5961-01-414-9177
MMBV105GLT1G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014149177
NSN
5961-01-414-9177
MFG
E S PRODUCTS INC
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-236AB
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
MMBD2838L
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014149178
NSN
5961-01-414-9178
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-236AB
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, DC AND 75.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
HD40016090
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014149207
NSN
5961-01-414-9207
HD40016090
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014149207
NSN
5961-01-414-9207
MFG
STONE AND COMPANY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
HD40018090
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014149207
NSN
5961-01-414-9207
HD40018090
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014149207
NSN
5961-01-414-9207
MFG
STANDARD COMMUNICATIONS CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
HD20006200
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014149208
NSN
5961-01-414-9208
HD20006200
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014149208
NSN
5961-01-414-9208
MFG
STANDARD COMMUNICATIONS CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
HT305360F0
TRANSISTOR
NSN, MFG P/N
5961014149209
NSN
5961-01-414-9209
MFG
STANDARD COMMUNICATIONS CORP
Description
TRANSISTOR
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HD10005020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014149213
NSN
5961-01-414-9213
HD10005020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014149213
NSN
5961-01-414-9213
MFG
STANDARD COMMUNICATIONS CORP
Description
SEMICONDUCTOR DEVICE,DIODE
