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5961-00-813-8697

20 Products

PS721

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008138697

NSN

5961-00-813-8697

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PS721

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008138697

NSN

5961-00-813-8697

MFG

TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.265 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REVERSE VOLTAGE, PEAK

1850-0173

TRANSISTOR

NSN, MFG P/N

5961008137283

NSN

5961-00-813-7283

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1850-0173

TRANSISTOR

NSN, MFG P/N

5961008137283

NSN

5961-00-813-7283

MFG

AGILENT TECHNOLOGIES INC. DIV AGILENT TECHNOLOGIES HEADQUARTERS

Description

CURRENT RATING PER CHARACTERISTIC: -300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N1307
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/126
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/126 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND -25.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

2311545

TRANSISTOR

NSN, MFG P/N

5961008137283

NSN

5961-00-813-7283

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2311545

TRANSISTOR

NSN, MFG P/N

5961008137283

NSN

5961-00-813-7283

MFG

NAVAL SEA SYSTEMS COMMAND

Description

CURRENT RATING PER CHARACTERISTIC: -300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N1307
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/126
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/126 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND -25.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

2N1307

TRANSISTOR

NSN, MFG P/N

5961008137283

NSN

5961-00-813-7283

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2N1307

TRANSISTOR

NSN, MFG P/N

5961008137283

NSN

5961-00-813-7283

MFG

JOINT ELECTRON DEVICE ENGINEERING COUNCIL

Description

CURRENT RATING PER CHARACTERISTIC: -300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N1307
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/126
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/126 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND -25.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

3011350-00

TRANSISTOR

NSN, MFG P/N

5961008137283

NSN

5961-00-813-7283

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3011350-00

TRANSISTOR

NSN, MFG P/N

5961008137283

NSN

5961-00-813-7283

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2

Description

CURRENT RATING PER CHARACTERISTIC: -300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N1307
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/126
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/126 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND -25.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

4192800-191

TRANSISTOR

NSN, MFG P/N

5961008137283

NSN

5961-00-813-7283

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4192800-191

TRANSISTOR

NSN, MFG P/N

5961008137283

NSN

5961-00-813-7283

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

CURRENT RATING PER CHARACTERISTIC: -300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N1307
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/126
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/126 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND -25.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

969082

TRANSISTOR

NSN, MFG P/N

5961008137283

NSN

5961-00-813-7283

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969082

TRANSISTOR

NSN, MFG P/N

5961008137283

NSN

5961-00-813-7283

MFG

DATA PRODUCTS CORP

Description

CURRENT RATING PER CHARACTERISTIC: -300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N1307
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/126
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/126 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND -25.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

B94487

TRANSISTOR

NSN, MFG P/N

5961008137283

NSN

5961-00-813-7283

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B94487

TRANSISTOR

NSN, MFG P/N

5961008137283

NSN

5961-00-813-7283

MFG

UNISYS CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: -300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N1307
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/126
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/126 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND -25.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

DMS 89127B

TRANSISTOR

NSN, MFG P/N

5961008137283

NSN

5961-00-813-7283

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DMS 89127B

TRANSISTOR

NSN, MFG P/N

5961008137283

NSN

5961-00-813-7283

MFG

DLA LAND AND MARITIME

Description

CURRENT RATING PER CHARACTERISTIC: -300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N1307
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/126
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/126 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND -25.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

JAN2N1307

TRANSISTOR

NSN, MFG P/N

5961008137283

NSN

5961-00-813-7283

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JAN2N1307

TRANSISTOR

NSN, MFG P/N

5961008137283

NSN

5961-00-813-7283

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: -300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N1307
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/126
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/126 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND -25.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

M59-54

TRANSISTOR

NSN, MFG P/N

5961008137283

NSN

5961-00-813-7283

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M59-54

TRANSISTOR

NSN, MFG P/N

5961008137283

NSN

5961-00-813-7283

MFG

MILTOPE CORPORATION DBA VT MILTOPE

Description

CURRENT RATING PER CHARACTERISTIC: -300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N1307
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/126
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/126 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND -25.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

1N2940

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008137546

NSN

5961-00-813-7546

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1N2940

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008137546

NSN

5961-00-813-7546

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 1.03 MILLIAMPERES MAXIMUM PEAK POINT CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE3042 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

1N2940A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008137546

NSN

5961-00-813-7546

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1N2940A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008137546

NSN

5961-00-813-7546

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT

Description

CURRENT RATING PER CHARACTERISTIC: 1.03 MILLIAMPERES MAXIMUM PEAK POINT CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE3042 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

2N457A

TRANSISTOR

NSN, MFG P/N

5961008137837

NSN

5961-00-813-7837

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2N457A

TRANSISTOR

NSN, MFG P/N

5961008137837

NSN

5961-00-813-7837

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 1 PIN OR 2 PIN

617981-2

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961008138183

NSN

5961-00-813-8183

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617981-2

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961008138183

NSN

5961-00-813-8183

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

HD4039

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961008138183

NSN

5961-00-813-8183

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HD4039

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961008138183

NSN

5961-00-813-8183

MFG

L-3 COMMUNICATIONS ELECTRON TECHNOLOGIES INC. DIV L-3 COMMUNICATIONS ELECTRON TECHNOLOGIES INC

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

2N1480

TRANSISTOR

NSN, MFG P/N

5961008138343

NSN

5961-00-813-8343

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2N1480

TRANSISTOR

NSN, MFG P/N

5961008138343

NSN

5961-00-813-8343

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-2N1480 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

723020-014

TRANSISTOR

NSN, MFG P/N

5961008138343

NSN

5961-00-813-8343

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723020-014

TRANSISTOR

NSN, MFG P/N

5961008138343

NSN

5961-00-813-8343

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-2N1480 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

12041-0028

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008138697

NSN

5961-00-813-8697

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12041-0028

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008138697

NSN

5961-00-813-8697

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.265 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REVERSE VOLTAGE, PEAK

291664-6

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008138697

NSN

5961-00-813-8697

View More Info

291664-6

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008138697

NSN

5961-00-813-8697

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 0.265 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REVERSE VOLTAGE, PEAK