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5961-01-374-8497
20 Products
101-2044
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013748497
NSN
5961-01-374-8497
MFG
MILLIVAC INSTRUMENTS INC
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC
III END ITEM IDENTIFICATION: 6625-01-287-6242
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
SS-32104
TRANSISTOR
NSN, MFG P/N
5961013747824
NSN
5961-01-374-7824
MFG
THALES COMMUNICATIONS INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
INCLOSURE MATERIAL: METAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
UF28100M
TRANSISTOR
NSN, MFG P/N
5961013747824
NSN
5961-01-374-7824
MFG
M/A-COM TECHNOLOGY SOLUTIONS INC. DBA COMMERCIAL ELECTRONICS PHO DIV POWER HYBRIDS OPERATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
INCLOSURE MATERIAL: METAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
SS-32105
TRANSISTOR
NSN, MFG P/N
5961013747825
NSN
5961-01-374-7825
MFG
THALES COMMUNICATIONS INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES NOMINAL DRAIN CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: SLOT
OVERALL HEIGHT: 0.200 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.975 INCHES MINIMUM AND 0.980 INCHES MAXIMUM
OVERALL WIDTH: 0.250 INCHES MINIMUM AND 0.255 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 116.0 WATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 NOMINAL DRAIN TO SOURCE VOLTAGE AND 20.0 NOMINAL GATE TO SOURCE VOLTAGE
Related Searches:
UF2820P
TRANSISTOR
NSN, MFG P/N
5961013747825
NSN
5961-01-374-7825
MFG
M/A-COM TECHNOLOGY SOLUTIONS INC. DBA COMMERCIAL ELECTRONICS PHO DIV POWER HYBRIDS OPERATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES NOMINAL DRAIN CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: SLOT
OVERALL HEIGHT: 0.200 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.975 INCHES MINIMUM AND 0.980 INCHES MAXIMUM
OVERALL WIDTH: 0.250 INCHES MINIMUM AND 0.255 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 116.0 WATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 NOMINAL DRAIN TO SOURCE VOLTAGE AND 20.0 NOMINAL GATE TO SOURCE VOLTAGE
Related Searches:
742684
TRANSISTOR
NSN, MFG P/N
5961013747826
NSN
5961-01-374-7826
MFG
FLUKE CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: -200.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-236AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.89 MILLIMETERS MINIMUM AND 1.11 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.80 MILLIMETERS MINIMUM AND 3.04 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.10 MILLIMETERS MINIMUM AND 2.50 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND -40.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND -5.0 NOMINAL BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
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MMBT3906LT1
TRANSISTOR
NSN, MFG P/N
5961013747826
NSN
5961-01-374-7826
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: -200.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-236AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.89 MILLIMETERS MINIMUM AND 1.11 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.80 MILLIMETERS MINIMUM AND 3.04 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.10 MILLIMETERS MINIMUM AND 2.50 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND -40.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND -5.0 NOMINAL BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
SS-32089-3906
TRANSISTOR
NSN, MFG P/N
5961013747826
NSN
5961-01-374-7826
MFG
THALES COMMUNICATIONS INC.
Description
CURRENT RATING PER CHARACTERISTIC: -200.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-236AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.89 MILLIMETERS MINIMUM AND 1.11 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.80 MILLIMETERS MINIMUM AND 3.04 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.10 MILLIMETERS MINIMUM AND 2.50 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND -40.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND -5.0 NOMINAL BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
SS-32101
TRANSISTOR
NSN, MFG P/N
5961013748492
NSN
5961-01-374-8492
MFG
THALES COMMUNICATIONS INC.
Description
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: THREADED HOLE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
UF2810P
TRANSISTOR
NSN, MFG P/N
5961013748492
NSN
5961-01-374-8492
MFG
M/A-COM TECHNOLOGY SOLUTIONS INC. DBA COMMERCIAL ELECTRONICS PHO DIV POWER HYBRIDS OPERATION
Description
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: THREADED HOLE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
MMBV2103L
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013748493
NSN
5961-01-374-8493
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
CAPACITANCE RATING IN PICOFARADS: 9.0 MINIMUM AND 11.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-236AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.800 MILLIMETERS MINIMUM AND 1.200 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.800 MILLIMETERS MINIMUM AND 3.040 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.200 MILLIMETERS MINIMUM AND 1.400 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 280.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
MMBV2103LT1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013748493
NSN
5961-01-374-8493
MMBV2103LT1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013748493
NSN
5961-01-374-8493
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CAPACITANCE RATING IN PICOFARADS: 9.0 MINIMUM AND 11.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-236AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.800 MILLIMETERS MINIMUM AND 1.200 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.800 MILLIMETERS MINIMUM AND 3.040 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.200 MILLIMETERS MINIMUM AND 1.400 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 280.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
SS-29032
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013748493
NSN
5961-01-374-8493
MFG
THALES COMMUNICATIONS INC.
Description
CAPACITANCE RATING IN PICOFARADS: 9.0 MINIMUM AND 11.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-236AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.800 MILLIMETERS MINIMUM AND 1.200 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.800 MILLIMETERS MINIMUM AND 3.040 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.200 MILLIMETERS MINIMUM AND 1.400 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 280.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
BZX84-C43
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013748494
NSN
5961-01-374-8494
MFG
PHILIPS SEMICONDUCTORS INC
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 250.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.5 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 43.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
BZX84-C43TA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013748494
NSN
5961-01-374-8494
BZX84-C43TA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013748494
NSN
5961-01-374-8494
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 250.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.5 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 43.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
BZX84-C43TR
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013748494
NSN
5961-01-374-8494
BZX84-C43TR
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013748494
NSN
5961-01-374-8494
MFG
PHILLIPS COMPONENTS INC
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 250.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.5 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 43.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
SS-33602
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013748494
NSN
5961-01-374-8494
MFG
THALES COMMUNICATIONS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 250.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.5 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 43.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
SMV1200-04
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013748495
NSN
5961-01-374-8495
SMV1200-04
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013748495
NSN
5961-01-374-8495
MFG
SKYWORKS SOLUTIONS INC.
Description
CAPACITANCE RATING IN PICOFARADS: 10.5 MINIMUM AND 12.5 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC AND 0.10 MICROAMPERES NOMINAL REVERSE CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.8 MILLIMETERS MINIMUM AND 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.2 MILLIMETERS MINIMUM AND 1.4 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
SS-29028
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013748495
NSN
5961-01-374-8495
MFG
THALES COMMUNICATIONS INC.
Description
CAPACITANCE RATING IN PICOFARADS: 10.5 MINIMUM AND 12.5 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC AND 0.10 MICROAMPERES NOMINAL REVERSE CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.8 MILLIMETERS MINIMUM AND 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.2 MILLIMETERS MINIMUM AND 1.4 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
101-2026
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013748496
NSN
5961-01-374-8496
MFG
MILLIVAC INSTRUMENTS INC
Description
III END ITEM IDENTIFICATION: 6625-01-287-6242
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
