My Quote Request
No products added yet
5961-01-374-1943
20 Products
9241442-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013741943
NSN
5961-01-374-1943
9241442-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013741943
NSN
5961-01-374-1943
MFG
AIR FORCE UNITED STATES DEPARTMENT OF THE DBA TINKER AFB OC ALC DSP
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 35.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5531D-1
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/437 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED W
Related Searches:
CDLL5531D
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013741943
NSN
5961-01-374-1943
MFG
COMPENSATED DEVICES INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 35.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5531D-1
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/437 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED W
Related Searches:
JANTX1N5531D
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013741943
NSN
5961-01-374-1943
JANTX1N5531D
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013741943
NSN
5961-01-374-1943
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 35.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5531D-1
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/437 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED W
Related Searches:
FBN-36485A
TRANSISTOR
NSN, MFG P/N
5961013742992
NSN
5961-01-374-2992
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES NOMINAL BASE CURRENT, DC AND 15.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.850 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.370 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TRANSFER RATIO: 30.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 120.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MINIMUM
Related Searches:
1369MC0049
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013742993
NSN
5961-01-374-2993
1369MC0049
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013742993
NSN
5961-01-374-2993
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC AND 30.00 MILLIAMPERES NOMINAL REVERSE CURRENT, DC
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-46
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
LM185BH/883B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013742993
NSN
5961-01-374-2993
LM185BH/883B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013742993
NSN
5961-01-374-2993
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC AND 30.00 MILLIAMPERES NOMINAL REVERSE CURRENT, DC
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-46
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
SJE2426
TRANSISTOR
NSN, MFG P/N
5961013743908
NSN
5961-01-374-3908
MFG
FREESCALE SEMICONDUCTOR INC.
Description
III END ITEM IDENTIFICATION: PROCESSOR UNIT HPU-74
Related Searches:
007-0345-01
TRANSISTOR
NSN, MFG P/N
5961013743909
NSN
5961-01-374-3909
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-OLATHE
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
Related Searches:
438238-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013745521
NSN
5961-01-374-5521
MFG
BAE SYSTEMS CONTROLS INC
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.228 INCHES MINIMUM AND 0.232 INCHES MAXIMUM
OVERALL LENGTH: 0.766 INCHES MINIMUM AND 0.792 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS NOMINAL PEAK PULSE OUTPUT POWER
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 07690-438238 MANUFACTURERS SOURCE CONTROL
TERMINAL TYPE AND QUANTITY: 2 SOLDER STUD
Related Searches:
MA41862
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013745521
NSN
5961-01-374-5521
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.228 INCHES MINIMUM AND 0.232 INCHES MAXIMUM
OVERALL LENGTH: 0.766 INCHES MINIMUM AND 0.792 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS NOMINAL PEAK PULSE OUTPUT POWER
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 07690-438238 MANUFACTURERS SOURCE CONTROL
TERMINAL TYPE AND QUANTITY: 2 SOLDER STUD
Related Searches:
8713A92
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013745522
NSN
5961-01-374-5522
MFG
CBS BROADCASTING INC. DBA CBS DIV BECHTEL PLANT MACHINERY INC. - PITTSBURGH
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 8713A92
MANUFACTURERS CODE: 59042
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
914085PC7
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013745522
NSN
5961-01-374-5522
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MISSILES AND FIRE CONTROL - ARCHBALD
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 8713A92
MANUFACTURERS CODE: 59042
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
110A328-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013745523
NSN
5961-01-374-5523
MFG
LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES NOMINAL FORWARD CURRENT, DC
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: GLASS OR CERAMIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.080 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.55 MAXIMUM FORWARD VOLTAGE, DC AND 20.0 NOMINAL EMITTER TO COLLECTOR VOLTAGE, FLOATING POTENTIAL, DC WITH BASE BIASED IN REVERSE DIRECTION WITH RESPECT TO THE COLLECTOR
Related Searches:
SDX328-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013745523
NSN
5961-01-374-5523
MFG
SOLID STATE DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES NOMINAL FORWARD CURRENT, DC
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: GLASS OR CERAMIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.080 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.55 MAXIMUM FORWARD VOLTAGE, DC AND 20.0 NOMINAL EMITTER TO COLLECTOR VOLTAGE, FLOATING POTENTIAL, DC WITH BASE BIASED IN REVERSE DIRECTION WITH RESPECT TO THE COLLECTOR
Related Searches:
110A328-4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013745524
NSN
5961-01-374-5524
MFG
LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES NOMINAL FORWARD CURRENT, DC
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: CERAMIC OR GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.080 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.7 MAXIMUM FORWARD VOLTAGE, DC AND 40.0 NOMINAL EMITTER TO COLLECTOR VOLTAGE, FLOATING POTENTIAL, DC WITH BASE BIASED IN REVERSE DIRECTION WITH RESPECT TO THE COLLECTOR
Related Searches:
SDX328-4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013745524
NSN
5961-01-374-5524
MFG
SOLID STATE DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES NOMINAL FORWARD CURRENT, DC
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: CERAMIC OR GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.080 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.7 MAXIMUM FORWARD VOLTAGE, DC AND 40.0 NOMINAL EMITTER TO COLLECTOR VOLTAGE, FLOATING POTENTIAL, DC WITH BASE BIASED IN REVERSE DIRECTION WITH RESPECT TO THE COLLECTOR
Related Searches:
755002B9706-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013745526
NSN
5961-01-374-5526
755002B9706-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013745526
NSN
5961-01-374-5526
MFG
QUARTERMASTER GENERAL
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES NOMINAL PEAK FORWARD SURGE CURRENT SINGLE SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.700 INCHES MAXIMUM
OVERALL LENGTH: 2.895 INCHES MAXIMUM
OVERALL WIDTH: 0.920 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS NOMINAL TOTAL POWER DISSIPATION SINGLE SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON SINGLE SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 TURRET
TEST DATA DOCUMENT: 87990-755002B9706 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 NOMINAL BREAKDOWN VOLTAGE, INSTANTANEOUS SINGLE SEMICONDUCTOR DEVICE DIODE
Related Searches:
GZ25028A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013745526
NSN
5961-01-374-5526
GZ25028A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013745526
NSN
5961-01-374-5526
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES NOMINAL PEAK FORWARD SURGE CURRENT SINGLE SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.700 INCHES MAXIMUM
OVERALL LENGTH: 2.895 INCHES MAXIMUM
OVERALL WIDTH: 0.920 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS NOMINAL TOTAL POWER DISSIPATION SINGLE SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON SINGLE SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 TURRET
TEST DATA DOCUMENT: 87990-755002B9706 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 NOMINAL BREAKDOWN VOLTAGE, INSTANTANEOUS SINGLE SEMICONDUCTOR DEVICE DIODE
Related Searches:
922-6144-020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013745995
NSN
5961-01-374-5995
922-6144-020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013745995
NSN
5961-01-374-5995
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES NOMINAL REVERSE CURRENT, DC
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC OR CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.034 INCHES MINIMUM AND 0.050 INCHES MAXIMUM
OVERALL LENGTH: 0.094 INCHES MINIMUM AND 0.102 INCHES MAXIMUM
OVERALL WIDTH: 0.094 INCHES MINIMUM AND 0.102 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
TERMINAL LENGTH: 0.130 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
MA46533E
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013745995
NSN
5961-01-374-5995
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES NOMINAL REVERSE CURRENT, DC
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC OR CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.034 INCHES MINIMUM AND 0.050 INCHES MAXIMUM
OVERALL LENGTH: 0.094 INCHES MINIMUM AND 0.102 INCHES MAXIMUM
OVERALL WIDTH: 0.094 INCHES MINIMUM AND 0.102 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
TERMINAL LENGTH: 0.130 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MINIMUM BREAKDOWN VOLTAGE, DC
