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5961-01-358-9696
20 Products
RA-940
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013589696
NSN
5961-01-358-9696
RA-940
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013589696
NSN
5961-01-358-9696
MFG
VOLTAGE MULTIPLIERS INC. DBA V M I
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 15.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.187 INCHES MAXIMUM
OVERALL LENGTH: 0.440 INCHES MAXIMUM
OVERALL WIDTH: 0.440 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
214-0004000012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013589824
NSN
5961-01-358-9824
214-0004000012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013589824
NSN
5961-01-358-9824
MFG
NUCLEAR PRODUCTS CO
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SD41J
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013589992
NSN
5961-01-358-9992
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
III END ITEM IDENTIFICATION: DIRECTIONAL FINDER
Related Searches:
588R660H01
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013590026
NSN
5961-01-359-0026
588R660H01
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013590026
NSN
5961-01-359-0026
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
SPECIAL FEATURES: WORKING PEAK REVERSE VOLTAGE 5.0 KVDC
Related Searches:
653-917-9024
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013590201
NSN
5961-01-359-0201
653-917-9024
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013590201
NSN
5961-01-359-0201
MFG
HONEYWELL ASCA INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
UZ7870R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013590201
NSN
5961-01-359-0201
MFG
MICRO USPD INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
34069523-001
TRANSISTOR
NSN, MFG P/N
5961013590309
NSN
5961-01-359-0309
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-CLEARWATER SPACE
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
JANTX2N3439
TRANSISTOR
NSN, MFG P/N
5961013590309
NSN
5961-01-359-0309
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
SPN1101
TRANSISTOR
NSN, MFG P/N
5961013590309
NSN
5961-01-359-0309
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
44AJ106
TRANSISTOR
NSN, MFG P/N
5961013590310
NSN
5961-01-359-0310
MFG
SOLITRON DEVICES INC.
Description
TRANSISTOR
Related Searches:
934A933-2
TRANSISTOR
NSN, MFG P/N
5961013590310
NSN
5961-01-359-0310
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
TRANSISTOR
Related Searches:
PP8972
TRANSISTOR
NSN, MFG P/N
5961013590310
NSN
5961-01-359-0310
MFG
MICROSEMI PPC INC
Description
TRANSISTOR
Related Searches:
MHQ6002HX
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013590311
NSN
5961-01-359-0311
MHQ6002HX
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013590311
NSN
5961-01-359-0311
MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-116
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.300 INCHES NOMINAL
OVERALL LENGTH: 0.722 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 650.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 14 PIN
TRANSFER RATIO: 30.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR
Related Searches:
35-1504
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013591672
NSN
5961-01-359-1672
35-1504
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013591672
NSN
5961-01-359-1672
MFG
DRS POWER & CONTROL TECHNOLOGIES INC.
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 35-1504
MANUFACTURERS CODE: 27192
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
35-1505
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013591673
NSN
5961-01-359-1673
35-1505
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013591673
NSN
5961-01-359-1673
MFG
DRS POWER & CONTROL TECHNOLOGIES INC.
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 35-1505
MANUFACTURERS CODE: 27192
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
535195
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013591788
NSN
5961-01-359-1788
MFG
FLUKE CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
810895
TRANSISTOR
NSN, MFG P/N
5961013591813
NSN
5961-01-359-1813
MFG
FLUKE CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FUNCTION FOR WHICH DESIGNED: MICROWAVE
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.5 MILLIMETERS NOMINAL
OVERALL LENGTH: 13.5 MILLIMETERS NOMINAL
OVERALL WIDTH: 13.5 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 1.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
NE56803
TRANSISTOR
NSN, MFG P/N
5961013591813
NSN
5961-01-359-1813
MFG
NEC AMERICA INC
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FUNCTION FOR WHICH DESIGNED: MICROWAVE
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.5 MILLIMETERS NOMINAL
OVERALL LENGTH: 13.5 MILLIMETERS NOMINAL
OVERALL WIDTH: 13.5 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 1.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
4838-831255
TRANSISTOR
NSN, MFG P/N
5961013591814
NSN
5961-01-359-1814
MFG
FLUKE CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 14.00 AMPERES MAXIMUM ON-STATE DRAIN CURRENT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.170 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.580 INCHES MINIMUM AND 0.594 INCHES MAXIMUM
OVERALL WIDTH: 0.405 INCHES MINIMUM AND 0.415 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 5 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 100.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
IRC530-007
TRANSISTOR
NSN, MFG P/N
5961013591814
NSN
5961-01-359-1814
MFG
IR-ONICS INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 14.00 AMPERES MAXIMUM ON-STATE DRAIN CURRENT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.170 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.580 INCHES MINIMUM AND 0.594 INCHES MAXIMUM
OVERALL WIDTH: 0.405 INCHES MINIMUM AND 0.415 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 5 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 100.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
