My Quote Request
No products added yet
5961-01-352-4842
20 Products
R5021010RSWR
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013524842
NSN
5961-01-352-4842
R5021010RSWR
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013524842
NSN
5961-01-352-4842
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 35-1507-3
MANUFACTURERS CODE: 27192
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
30WQ10F
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013523488
NSN
5961-01-352-3488
MFG
IR-ONICS INC
Description
CURRENT RATING PER CHARACTERISTIC: 3.30 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-252
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 2.19 MILLIMETERS MINIMUM AND 2.38 MILLIMETERS MAXIMUM
OVERALL LENGTH: 6.85 MILLIMETERS MINIMUM AND 7.49 MILLIMETERS MAXIMUM
OVERALL WIDTH: 6.35 MILLIMETERS MINIMUM AND 6.73 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.51 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
837740
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013523488
NSN
5961-01-352-3488
MFG
FLUKE CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 3.30 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-252
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 2.19 MILLIMETERS MINIMUM AND 2.38 MILLIMETERS MAXIMUM
OVERALL LENGTH: 6.85 MILLIMETERS MINIMUM AND 7.49 MILLIMETERS MAXIMUM
OVERALL WIDTH: 6.35 MILLIMETERS MINIMUM AND 6.73 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.51 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
842880
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961013523489
NSN
5961-01-352-3489
MFG
FLUKE CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
FIELD FORCE EFFECT TYPE: ELECTROSTATIC CHARGE
INTERNAL CONFIGURATION: FIELD EFFECT ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
816272
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013523492
NSN
5961-01-352-3492
816272
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013523492
NSN
5961-01-352-3492
MFG
FLUKE CORPORATION
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
Related Searches:
816298
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013523493
NSN
5961-01-352-3493
816298
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013523493
NSN
5961-01-352-3493
MFG
FLUKE CORPORATION
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
Related Searches:
820423
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013523494
NSN
5961-01-352-3494
820423
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013523494
NSN
5961-01-352-3494
MFG
FLUKE CORPORATION
Description
COMPONENT NAME AND QUANTITY: 5 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE ALL SEMICONDUCTOR DEVICE DIODE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.3 MAXIMUM NOMINAL REGULATOR VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0 ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
5322 130 31928
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013523496
NSN
5961-01-352-3496
5322 130 31928
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013523496
NSN
5961-01-352-3496
MFG
FLUKE CORPORATION
Description
COMPONENT NAME AND QUANTITY: 3 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.029 INCHES MINIMUM AND 0.037 INCHES MAXIMUM
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
OVERALL WIDTH: 0.047 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 0.018 INCHES MINIMUM AND 0.024 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
BAS16
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013523496
NSN
5961-01-352-3496
MFG
PHILIPS CIRCUIT ASSEMBLIES
Description
COMPONENT NAME AND QUANTITY: 3 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.029 INCHES MINIMUM AND 0.037 INCHES MAXIMUM
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
OVERALL WIDTH: 0.047 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 0.018 INCHES MINIMUM AND 0.024 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
851659
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013523497
NSN
5961-01-352-3497
851659
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013523497
NSN
5961-01-352-3497
MFG
FLUKE CORPORATION
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MINIMUM BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
MBAV74TL
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013523497
NSN
5961-01-352-3497
MBAV74TL
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013523497
NSN
5961-01-352-3497
MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MINIMUM BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
837732
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013523612
NSN
5961-01-352-3612
MFG
FLUKE CORPORATION
Description
MAJOR COMPONENTS: DIODE 3
Related Searches:
MBR140PRL
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013523612
NSN
5961-01-352-3612
MBR140PRL
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013523612
NSN
5961-01-352-3612
MFG
FREESCALE SEMICONDUCTOR INC.
Description
MAJOR COMPONENTS: DIODE 3
Related Searches:
830505
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013524688
NSN
5961-01-352-4688
830505
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013524688
NSN
5961-01-352-4688
MFG
FLUKE CORPORATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
35-1506
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013524840
NSN
5961-01-352-4840
MFG
DRS POWER & CONTROL TECHNOLOGIES INC.
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 35-1506
MANUFACTURERS CODE: 27192
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
R23DF
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013524840
NSN
5961-01-352-4840
MFG
NAVAL INVENTORY CONTROL POINT MECHANICSBURG
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 35-1506
MANUFACTURERS CODE: 27192
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
35-1506-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013524841
NSN
5961-01-352-4841
MFG
DRS POWER & CONTROL TECHNOLOGIES INC.
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 35-1506-2
MANUFACTURERS CODE: 27192
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
R23DFR
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013524841
NSN
5961-01-352-4841
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 35-1506-2
MANUFACTURERS CODE: 27192
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
R6031425HSYI
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013524841
NSN
5961-01-352-4841
R6031425HSYI
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013524841
NSN
5961-01-352-4841
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 35-1506-2
MANUFACTURERS CODE: 27192
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
35-1507-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013524842
NSN
5961-01-352-4842
MFG
DRS POWER & CONTROL TECHNOLOGIES INC.
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 35-1507-3
MANUFACTURERS CODE: 27192
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
