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5961-01-333-2236
20 Products
TIC246M
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013332236
NSN
5961-01-333-2236
TIC246M
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013332236
NSN
5961-01-333-2236
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 125.00 AMPERES MAXIMUM PEAK ON-STATE SURGE CURRENT AND 16.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 110.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.546 INCHES NOMINAL
OVERALL LENGTH: 0.705 INCHES NOMINAL
OVERALL WIDTH: 0.400 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.381 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
117606-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013332230
NSN
5961-01-333-2230
117606-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013332230
NSN
5961-01-333-2230
MFG
TDK-LAMBDA AMERICAS INC. D IV HIGH POWER DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
FEATURES PROVIDED: BURN IN
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.900 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
167258-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013332230
NSN
5961-01-333-2230
MFG
GE AVIATION SYSTEMS LLC
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
FEATURES PROVIDED: BURN IN
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.900 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
1901-1108
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013332230
NSN
5961-01-333-2230
MFG
HEWLETT PACKARD CO
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
FEATURES PROVIDED: BURN IN
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.900 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
233961-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013332230
NSN
5961-01-333-2230
MFG
CUBIC DEFENSE APPLICATIONS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
FEATURES PROVIDED: BURN IN
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.900 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
353-6616-012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013332230
NSN
5961-01-333-2230
353-6616-012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013332230
NSN
5961-01-333-2230
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
FEATURES PROVIDED: BURN IN
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.900 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
41-1012-03
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013332230
NSN
5961-01-333-2230
41-1012-03
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013332230
NSN
5961-01-333-2230
MFG
SIGNAL TECHNOLOGY CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
FEATURES PROVIDED: BURN IN
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.900 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
6135299-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013332230
NSN
5961-01-333-2230
MFG
LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
FEATURES PROVIDED: BURN IN
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.900 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
7908839-11
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013332230
NSN
5961-01-333-2230
7908839-11
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013332230
NSN
5961-01-333-2230
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
FEATURES PROVIDED: BURN IN
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.900 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
803721-4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013332230
NSN
5961-01-333-2230
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
FEATURES PROVIDED: BURN IN
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.900 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
CR1306F
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013332230
NSN
5961-01-333-2230
MFG
SCIENTIFIC RADIO SYSTEMS INC
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
FEATURES PROVIDED: BURN IN
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.900 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
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DSR5400X
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013332230
NSN
5961-01-333-2230
MFG
OPTEK TECHNOLOGY INC
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
FEATURES PROVIDED: BURN IN
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.900 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
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S340S7
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013332230
NSN
5961-01-333-2230
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
FEATURES PROVIDED: BURN IN
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.900 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
SS7691
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013332230
NSN
5961-01-333-2230
MFG
SEMTECH CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
FEATURES PROVIDED: BURN IN
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.900 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
UES1305
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013332230
NSN
5961-01-333-2230
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
FEATURES PROVIDED: BURN IN
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.900 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
353-3813-012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013332231
NSN
5961-01-333-2231
353-3813-012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013332231
NSN
5961-01-333-2231
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CAPACITANCE RATING IN PICOFARADS: 1.0 MAXIMUM
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: DETECTOR AND MIXER AND SWITCHING
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
MP2X1640
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013332231
NSN
5961-01-333-2231
MFG
MPULSE MICROWAVE INC
Description
CAPACITANCE RATING IN PICOFARADS: 1.0 MAXIMUM
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: DETECTOR AND MIXER AND SWITCHING
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
TXB-2835
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013332231
NSN
5961-01-333-2231
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CAPACITANCE RATING IN PICOFARADS: 1.0 MAXIMUM
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: DETECTOR AND MIXER AND SWITCHING
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
353-3823-022
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013332232
NSN
5961-01-333-2232
353-3823-022
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013332232
NSN
5961-01-333-2232
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 0.10 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.05 MINIMUM NOMINAL REGULATOR VOLTAGE AND 6.35 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
PVZ1507
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013332232
NSN
5961-01-333-2232
MFG
OPTEK TECHNOLOGY INC
Description
CURRENT RATING PER CHARACTERISTIC: 0.10 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.05 MINIMUM NOMINAL REGULATOR VOLTAGE AND 6.35 MAXIMUM NOMINAL REGULATOR VOLTAGE
