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5961-01-448-8996
20 Products
RLR4004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014488996
NSN
5961-01-448-8996
MFG
ROHM CORP
Description
III END ITEM IDENTIFICATION: 6625-01-432-6997
INCLOSURE MATERIAL: GLASS
NONDEFINITIVE SPEC/STD DATA: LL-41 CASE
SPECIAL FEATURES: CATHODE BAND BLUE
TERMINAL TYPE AND QUANTITY: 0 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 480.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
SM-A-728997-3
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014483255
NSN
5961-01-448-3255
SM-A-728997-3
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014483255
NSN
5961-01-448-3255
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 AMPERES MAXIMUM FORWARD CURRENT, REPETITIVE, MAXIMUM PEAK TOTAL VALUE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-48
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 115.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL DIAMETER: 0.650 INCHES MAXIMUM
OVERALL LENGTH: 1.646 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.544 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 0.5 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 29357-43033-212-00481 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 650.0 MAXIMUM FORWARD VOLTAGE, PEAK AND 50.0 MAXIMUM EMITTER SUPPLY VOLTAGE
Related Searches:
128 299
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014484077
NSN
5961-01-448-4077
128 299
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014484077
NSN
5961-01-448-4077
MFG
MILLER ELECTRIC MFG CO
Description
III END ITEM IDENTIFICATION: 3431013923840
Related Searches:
AA115
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014484195
NSN
5961-01-448-4195
MFG
MICRO USPD INC
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE AND 100.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
6761103T
RECTIFIER MODULE
NSN, MFG P/N
5961014486013
NSN
5961-01-448-6013
MFG
MGE UPS SYSTEMS INC.
Description
III END ITEM IDENTIFICATION: TERMINAL DOPPLER WEATHER RADAR (TDWR)
Related Searches:
20-01272-001
TRANSISTOR
NSN, MFG P/N
5961014486141
NSN
5961-01-448-6141
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -65.0 DEG CELSIUS JUNCTION AND 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 1200.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 2.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
MA42111-510
TRANSISTOR
NSN, MFG P/N
5961014486141
NSN
5961-01-448-6141
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -65.0 DEG CELSIUS JUNCTION AND 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 1200.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 2.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
MP42111
TRANSISTOR
NSN, MFG P/N
5961014486141
NSN
5961-01-448-6141
MFG
MPULSE MICROWAVE INC
Description
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -65.0 DEG CELSIUS JUNCTION AND 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 1200.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 2.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
NTE472
TRANSISTOR
NSN, MFG P/N
5961014486407
NSN
5961-01-448-6407
MFG
NTE ELECTRONICS INC SUB OF SOLID STATE INC
Description
CURRENT RATING PER CHARACTERISTIC: 0.30 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, BASE OPEN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 36.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER AND 3.5 MINIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
183-4242
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014486412
NSN
5961-01-448-6412
183-4242
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014486412
NSN
5961-01-448-6412
MFG
RS COMPONENTS LIMITED
Description
SPECIAL FEATURES: SINGLE PHASE; 50 VDC; 15 AMP AVERAGE
Related Searches:
GBPC15005
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014486412
NSN
5961-01-448-6412
GBPC15005
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014486412
NSN
5961-01-448-6412
MFG
GENERAL SEMICONDUCTOR INC
Description
SPECIAL FEATURES: SINGLE PHASE; 50 VDC; 15 AMP AVERAGE
Related Searches:
MA/C1049/3/01 ITEM D1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014486412
NSN
5961-01-448-6412
MA/C1049/3/01 ITEM D1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014486412
NSN
5961-01-448-6412
MFG
ELECSIS LTD
Description
SPECIAL FEATURES: SINGLE PHASE; 50 VDC; 15 AMP AVERAGE
Related Searches:
A55S92043-21
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014486674
NSN
5961-01-448-6674
A55S92043-21
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014486674
NSN
5961-01-448-6674
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN AEROSPACE SYSTEMS
Description
SPECIAL FEATURES: END ITEM = PANEL INTERCO E/I FSCM 26512
Related Searches:
358-0135-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014486908
NSN
5961-01-448-6908
358-0135-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014486908
NSN
5961-01-448-6908
MFG
ONAN CORPORATION DBA CUMMINS POWER GENERATION
Description
SPECIAL FEATURES: POSITIVE/NEGATIVE DIODE
Related Searches:
358-0135-02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014486909
NSN
5961-01-448-6909
358-0135-02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014486909
NSN
5961-01-448-6909
MFG
ONAN CORPORATION DBA CUMMINS POWER GENERATION
Description
SPECIAL FEATURES: POSITIVE/NEGATIVE DIODE
Related Searches:
C20651-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014488977
NSN
5961-01-448-8977
C20651-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014488977
NSN
5961-01-448-8977
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV LOCKHEED MARTIN AERONAUTICS COMPANY
Description
FUNCTION FOR WHICH DESIGNED: RECTIFIER
III END ITEM IDENTIFICATION: F16AIRCOMBFIT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.570 INCHES MINIMUM AND 0.620 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: CONTROLLED
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
MCR265-4
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014488977
NSN
5961-01-448-8977
MCR265-4
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014488977
NSN
5961-01-448-8977
MFG
FREESCALE SEMICONDUCTOR INC.
Description
FUNCTION FOR WHICH DESIGNED: RECTIFIER
III END ITEM IDENTIFICATION: F16AIRCOMBFIT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.570 INCHES MINIMUM AND 0.620 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: CONTROLLED
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
28383/932
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014488993
NSN
5961-01-448-8993
MFG
AEROFLEX WICHITA INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, DC
III END ITEM IDENTIFICATION: 6625-01-432-6997 E/I FSCM 09553
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.035 INCHES MINIMUM AND 0.047 INCHES MAXIMUM
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
OVERALL WIDTH: 0.083 INCHES MINIMUM AND 0.104 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKOVER VOLTAGE, DC
Related Searches:
HSMP-3810-L
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014488993
NSN
5961-01-448-8993
HSMP-3810-L
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014488993
NSN
5961-01-448-8993
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, DC
III END ITEM IDENTIFICATION: 6625-01-432-6997 E/I FSCM 09553
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.035 INCHES MINIMUM AND 0.047 INCHES MAXIMUM
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
OVERALL WIDTH: 0.083 INCHES MINIMUM AND 0.104 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKOVER VOLTAGE, DC
Related Searches:
HSMP-3810-L30
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014488993
NSN
5961-01-448-8993
HSMP-3810-L30
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014488993
NSN
5961-01-448-8993
MFG
HEWLETT PACKARD CO
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, DC
III END ITEM IDENTIFICATION: 6625-01-432-6997 E/I FSCM 09553
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.035 INCHES MINIMUM AND 0.047 INCHES MAXIMUM
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
OVERALL WIDTH: 0.083 INCHES MINIMUM AND 0.104 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKOVER VOLTAGE, DC
