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5961-01-310-1998
20 Products
G285374-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013101998
NSN
5961-01-310-1998
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 0.10 MILLIAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS AND 40.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 500.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
III END ITEM IDENTIFICATION: RADIO TERMINAL SET AN/TRC-170
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM OR SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1250.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
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5727467-1
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961013097444
NSN
5961-01-309-7444
MFG
NAVAL SEA SYSTEMS COMMAND
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
DESIGN CONTROL REFERENCE: 5727467-1
FEATURES PROVIDED: BURN IN
III END ITEM IDENTIFICATION: TRANSMITTER,SONAR SIGNAL
MANUFACTURERS CODE: 53711
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 185.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE
POWER RATING PER CHARACTERISTIC: 2.0 WATTS NOMINAL REVERSE POWER DISSIPATION, DC ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: TRANSIENT,VOLTAGE SUPPRESSOR
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 310.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE
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2509307-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013097488
NSN
5961-01-309-7488
2509307-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013097488
NSN
5961-01-309-7488
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 75.00 AMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 REVERSE VOLTAGE, INSTANTANEOUS
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
DESIGN CONTROL REFERENCE: 2509307-1
III END ITEM IDENTIFICATION: ELECTRONIC ASSY,WARHEAD
MANUFACTURERS CODE: 10001
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
Related Searches:
181-6531-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013097572
NSN
5961-01-309-7572
181-6531-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013097572
NSN
5961-01-309-7572
MFG
ZENITH DATA SYSTEMS CORP FEDERAL SYSTEMS GROUP
Description
DESIGN CONTROL REFERENCE: 181-6531-1
III END ITEM IDENTIFICATION: SEMICONDUCTOR DEVICES AND ASSOCIATED HARDWARE
MANUFACTURERS CODE: 66285
THE MANUFACTURERS DATA:
Related Searches:
MTM10N25
TRANSISTOR
NSN, MFG P/N
5961013098672
NSN
5961-01-309-8672
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM DRAIN CURRENT AND 30.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 1.550 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 250.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 250.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
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MTM20N10
TRANSISTOR
NSN, MFG P/N
5961013098673
NSN
5961-01-309-8673
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM DRAIN CURRENT AND 60.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 1.550 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 80.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
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MUR1560
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013098675
NSN
5961-01-309-8675
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.620 INCHES MAXIMUM
OVERALL WIDTH: 0.405 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.562 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
MUR440
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013098676
NSN
5961-01-309-8676
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.370 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
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MBAW56
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013098678
NSN
5961-01-309-8678
MBAW56
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013098678
NSN
5961-01-309-8678
MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-236AB
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.0412 INCHES MAXIMUM
OVERALL LENGTH: 0.1197 INCHES MAXIMUM
OVERALL WIDTH: 0.0551 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 0.02165 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM REVERSE VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
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2431-244
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013099310
NSN
5961-01-309-9310
2431-244
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013099310
NSN
5961-01-309-9310
MFG
RECON/OPTICAL INC .
Description
III END ITEM IDENTIFICATION: 1430-01-286-1314
MANUFACTURERS CODE: 11871
MFR SOURCE CONTROLLING REFERENCE: 2431-244
SPEC/STD CONTROLLING DATA:
Related Searches:
SK30551C
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013099310
NSN
5961-01-309-9310
SK30551C
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013099310
NSN
5961-01-309-9310
MFG
OPTOTEK LTD
Description
III END ITEM IDENTIFICATION: 1430-01-286-1314
MANUFACTURERS CODE: 11871
MFR SOURCE CONTROLLING REFERENCE: 2431-244
SPEC/STD CONTROLLING DATA:
Related Searches:
J506
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013099707
NSN
5961-01-309-9707
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC AND 20.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FUNCTION FOR WHICH DESIGNED: CURRENT REGULATOR
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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104540
TRANSISTOR
NSN, MFG P/N
5961013101282
NSN
5961-01-310-1282
MFG
DRANETZ TECHNOLOGIES INC. DBA DRANETZ BMI
Description
TRANSISTOR
Related Searches:
L14G3
TRANSISTOR
NSN, MFG P/N
5961013101282
NSN
5961-01-310-1282
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
TRANSISTOR
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104432-G1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013101836
NSN
5961-01-310-1836
104432-G1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013101836
NSN
5961-01-310-1836
MFG
DRANETZ TECHNOLOGIES INC. DBA DRANETZ BMI
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: CERAMIC OR PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-247
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.185 INCHES MINIMUM AND 0.209 INCHES MAXIMUM
OVERALL LENGTH: 0.776 INCHES MINIMUM AND 0.799 INCHES MAXIMUM
OVERALL WIDTH: 0.602 INCHES MINIMUM AND 0.625 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 0.559 INCHES MINIMUM AND 0.582 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE AND 1.3 MAXIMUM FORWARD VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
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ESAD25-02C
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013101836
NSN
5961-01-310-1836
ESAD25-02C
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013101836
NSN
5961-01-310-1836
MFG
COLLMER SEMICONDUCTOR INC
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: CERAMIC OR PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-247
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.185 INCHES MINIMUM AND 0.209 INCHES MAXIMUM
OVERALL LENGTH: 0.776 INCHES MINIMUM AND 0.799 INCHES MAXIMUM
OVERALL WIDTH: 0.602 INCHES MINIMUM AND 0.625 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 0.559 INCHES MINIMUM AND 0.582 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE AND 1.3 MAXIMUM FORWARD VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
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1855-0645
TRANSISTOR
NSN, MFG P/N
5961013101997
NSN
5961-01-310-1997
MFG
HEWLETT PACKARD CO
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 120.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK AND 30.00 AMPERES MAXIMUM DRAIN CURRENT
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.580 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 50.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
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296-863
TRANSISTOR
NSN, MFG P/N
5961013101997
NSN
5961-01-310-1997
MFG
RADIOSPARES SAS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 120.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK AND 30.00 AMPERES MAXIMUM DRAIN CURRENT
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.580 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 50.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
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BUZ11
TRANSISTOR
NSN, MFG P/N
5961013101997
NSN
5961-01-310-1997
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 120.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK AND 30.00 AMPERES MAXIMUM DRAIN CURRENT
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.580 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 50.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
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80-7262
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013101998
NSN
5961-01-310-1998
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 0.10 MILLIAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS AND 40.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 500.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
III END ITEM IDENTIFICATION: RADIO TERMINAL SET AN/TRC-170
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM OR SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1250.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
