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5961-01-267-3992
20 Products
P-100-1197AR
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012673992
NSN
5961-01-267-3992
P-100-1197AR
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012673992
NSN
5961-01-267-3992
MFG
LA MARCHE MFG. CO. DBA LA MARCHE
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES NOMINAL FORWARD CURRENT, DC
FEATURES PROVIDED: REVERSE POLARITY
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 NOMINAL REVERSE VOLTAGE, DC
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30-037-44A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012673994
NSN
5961-01-267-3994
30-037-44A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012673994
NSN
5961-01-267-3994
MFG
BELL HELICOPTER TEXTRON INC.
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 0.010 POUNDS
CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: INSULATOR
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.420 INCHES NOMINAL
OVERALL LENGTH: 2.420 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 3.700 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 NOMINAL REVERSE VOLTAGE, PEAK
Related Searches:
60S6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012673994
NSN
5961-01-267-3994
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 0.010 POUNDS
CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: INSULATOR
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.420 INCHES NOMINAL
OVERALL LENGTH: 2.420 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 3.700 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 NOMINAL REVERSE VOLTAGE, PEAK
Related Searches:
BP12714
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012673994
NSN
5961-01-267-3994
MFG
BURKE PRODUCTS INC.
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 0.010 POUNDS
CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: INSULATOR
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.420 INCHES NOMINAL
OVERALL LENGTH: 2.420 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 3.700 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 NOMINAL REVERSE VOLTAGE, PEAK
Related Searches:
1884-0261
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012673997
NSN
5961-01-267-3997
1884-0261
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012673997
NSN
5961-01-267-3997
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MICROAMPERES MAXIMUM GATE TRIGGER CURRENT, DC AND 8.00 MILLIAMPERES MAXIMUM HOLDING CURRENT, DC AND 4.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.546 INCHES NOMINAL
OVERALL LENGTH: 0.705 INCHES NOMINAL
OVERALL WIDTH: 0.400 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM AVERAGE GATE POWER DISSIPATION AND 0.5 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL LENGTH: 0.381 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.8 MAXIMUM GATE TRIGGER VOLTAGE, DC AND 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 100.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
72053
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012673997
NSN
5961-01-267-3997
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MICROAMPERES MAXIMUM GATE TRIGGER CURRENT, DC AND 8.00 MILLIAMPERES MAXIMUM HOLDING CURRENT, DC AND 4.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.546 INCHES NOMINAL
OVERALL LENGTH: 0.705 INCHES NOMINAL
OVERALL WIDTH: 0.400 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM AVERAGE GATE POWER DISSIPATION AND 0.5 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL LENGTH: 0.381 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.8 MAXIMUM GATE TRIGGER VOLTAGE, DC AND 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 100.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
2A5W-ATP-FL-5/25
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012674078
NSN
5961-01-267-4078
2A5W-ATP-FL-5/25
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012674078
NSN
5961-01-267-4078
MFG
SLOAN COMPANY THE DBA SLOAN LED
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
37654194-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012674078
NSN
5961-01-267-4078
37654194-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012674078
NSN
5961-01-267-4078
MFG
RAYTHEON CO
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1372-0271
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012674519
NSN
5961-01-267-4519
1372-0271
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012674519
NSN
5961-01-267-4519
MFG
ESAB GROUP INC THE DBA ESAB WELDING PRODUCTS
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
1372-0273
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012674520
NSN
5961-01-267-4520
1372-0273
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012674520
NSN
5961-01-267-4520
MFG
ESAB GROUP INC THE DBA ESAB WELDING PRODUCTS
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
1372-0263
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012674521
NSN
5961-01-267-4521
1372-0263
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012674521
NSN
5961-01-267-4521
MFG
ESAB GROUP INC THE DBA ESAB WELDING PRODUCTS
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
152-0778-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012674600
NSN
5961-01-267-4600
152-0778-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012674600
NSN
5961-01-267-4600
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SZG30337RL
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012674600
NSN
5961-01-267-4600
SZG30337RL
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012674600
NSN
5961-01-267-4600
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
TD3811401
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012674600
NSN
5961-01-267-4600
MFG
MICROSEMI CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
807781-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012674601
NSN
5961-01-267-4601
807781-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012674601
NSN
5961-01-267-4601
MFG
RAYTHEON COMPANY
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 400.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: P-3 ORION; AIRCRAFT, VIKING 2-3B
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: COMMON CATHODE; WEAPON SYSTEM ESSENTIAL; ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 96214-807781 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE
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S05101
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012674601
NSN
5961-01-267-4601
S05101
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012674601
NSN
5961-01-267-4601
MFG
SEMICON COMPONENTS INC
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 400.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: P-3 ORION; AIRCRAFT, VIKING 2-3B
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: COMMON CATHODE; WEAPON SYSTEM ESSENTIAL; ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 96214-807781 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
SHA2608TX
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012674601
NSN
5961-01-267-4601
SHA2608TX
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012674601
NSN
5961-01-267-4601
MFG
SOLID STATE DEVICES INC.
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 400.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: P-3 ORION; AIRCRAFT, VIKING 2-3B
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: COMMON CATHODE; WEAPON SYSTEM ESSENTIAL; ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 96214-807781 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
UFT3280-C
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012674601
NSN
5961-01-267-4601
UFT3280-C
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012674601
NSN
5961-01-267-4601
MFG
MICROSEMI CORP-COLORADO
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 400.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: P-3 ORION; AIRCRAFT, VIKING 2-3B
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: COMMON CATHODE; WEAPON SYSTEM ESSENTIAL; ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 96214-807781 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
152-0779-00
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012674608
NSN
5961-01-267-4608
152-0779-00
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012674608
NSN
5961-01-267-4608
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
20-3189G10
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012674630
NSN
5961-01-267-4630
20-3189G10
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012674630
NSN
5961-01-267-4630
MFG
KIDDE TECHNOLOGIES INC DBA WALTER KIDDE AEROSPACE
Description
SEMICONDUCTOR DEVICE ASSEMBLY
