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5961-01-260-0556
20 Products
655-582
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012600556
NSN
5961-01-260-0556
655-582
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012600556
NSN
5961-01-260-0556
MFG
MICRO USPD INC
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.570 INCHES MAXIMUM
OVERALL LENGTH: 0.755 INCHES MAXIMUM
OVERALL WIDTH: 0.755 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 4 TURRET
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
6135190-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012596451
NSN
5961-01-259-6451
6135190-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012596451
NSN
5961-01-259-6451
MFG
LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.280 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.155 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 16 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN ALL TRANSISTOR
Related Searches:
SL3127
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012596451
NSN
5961-01-259-6451
SL3127
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012596451
NSN
5961-01-259-6451
MFG
PLESSEY TRADING CORP PLESSEY OPTOELECTRONICS AND MICROWAVE
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.280 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.155 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 16 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN ALL TRANSISTOR
Related Searches:
81C239P001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012597059
NSN
5961-01-259-7059
81C239P001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012597059
NSN
5961-01-259-7059
MFG
SELEX SISTEMI INTEGRATI SPA
Description
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES NOMINAL FORWARD CURRENT, AVERAGE AND 5.00 MICROAMPERES NOMINAL REVERSE CURRENT, PEAK
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-204AC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.104 INCHES MINIMUM AND 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 NOMINAL REVERSE VOLTAGE, PEAK
Related Searches:
GP15J
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012597059
NSN
5961-01-259-7059
MFG
GENERAL SEMICONDUCTOR INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES NOMINAL FORWARD CURRENT, AVERAGE AND 5.00 MICROAMPERES NOMINAL REVERSE CURRENT, PEAK
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-204AC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.104 INCHES MINIMUM AND 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 NOMINAL REVERSE VOLTAGE, PEAK
Related Searches:
5E8041/03-0001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012599183
NSN
5961-01-259-9183
5E8041/03-0001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012599183
NSN
5961-01-259-9183
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
III END ITEM IDENTIFICATION: ELEC ENG CONTROL
MAJOR COMPONENTS: DIODES 16,PRINTED WIRING BD 1
Related Searches:
1-193
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012599465
NSN
5961-01-259-9465
MFG
MOTOROLA INC MOTOROLA AUTOMOTIVE ELECTRONICS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
382635
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012599465
NSN
5961-01-259-9465
MFG
NACCO MATERIALS HANDLING GROUP INC DBA HYSTER
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1-163
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012599466
NSN
5961-01-259-9466
MFG
MOTOROLA INC MOTOROLA AUTOMOTIVE ELECTRONICS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
382636
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012599466
NSN
5961-01-259-9466
MFG
NACCO MATERIALS HANDLING GROUP INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
352-7904-010
TRANSISTOR
NSN, MFG P/N
5961012599609
NSN
5961-01-259-9609
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.580 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
IRF632
TRANSISTOR
NSN, MFG P/N
5961012599609
NSN
5961-01-259-9609
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.580 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
655-554-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012599656
NSN
5961-01-259-9656
655-554-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012599656
NSN
5961-01-259-9656
MFG
MICRO USPD INC
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 PEAK INVERSE VOLTAGE
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.315 INCHES MAXIMUM
OVERALL LENGTH: 2.250 INCHES MAXIMUM
OVERALL WIDTH: 0.350 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 INSULATED WIRE LEAD W/TERMINAL LUG
Related Searches:
7904982-04
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012599656
NSN
5961-01-259-9656
7904982-04
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012599656
NSN
5961-01-259-9656
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 PEAK INVERSE VOLTAGE
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.315 INCHES MAXIMUM
OVERALL LENGTH: 2.250 INCHES MAXIMUM
OVERALL WIDTH: 0.350 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 INSULATED WIRE LEAD W/TERMINAL LUG
Related Searches:
2SK135
TRANSISTOR
NSN, MFG P/N
5961012599841
NSN
5961-01-259-9841
MFG
HITACHI AMERICA LTD. DIV POWER SYSTEMS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES NOMINAL DRAIN CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.350 INCHES NOMINAL
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.312 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.5 MAXIMUM PEAK-POINT VOLTAGE AND 10.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
VSK530
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012599844
NSN
5961-01-259-9844
MFG
L-3 COMMUNICATIONS CORPORATION DBA L 3 COMMUNICATIONS CORPORATION EOS DIVISION
Description
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 65.0 DEG CELSIUS JUNCTION AND 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.190 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
OVERALL LENGTH: 2.750 INCHES NOMINAL
SPECIAL FEATURES: ENCAPSULATED; SLHOTTKY
TERMINAL CIRCLE DIAMETER: 0.048 INCHES MINIMUM AND 0.052 INCHES MAXIMUM
TERMINAL LENGTH: 1.190 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 21.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
Related Searches:
GZ44620A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012599845
NSN
5961-01-259-9845
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
CAPACITANCE RATING IN PICOFARADS: 170.0 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 180.00 AMPERES NOMINAL PEAK PULSE CURRENT
OVERALL HEIGHT: 0.470 INCHES MINIMUM AND 0.530 INCHES MAXIMUM
OVERALL LENGTH: 2.220 INCHES MINIMUM AND 2.280 INCHES MAXIMUM
OVERALL WIDTH: 1.345 INCHES MINIMUM AND 1.405 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 225.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
SA30CA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012599847
NSN
5961-01-259-9847
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM ON-STATE CURRENT, DC
OVERALL DIAMETER: 0.120 INCHES MINIMUM AND 0.127 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.255 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 33.3 MINIMUM BREAKDOWN VOLTAGE, DC AND 36.8 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
SE25831-023
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012599847
NSN
5961-01-259-9847
SE25831-023
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012599847
NSN
5961-01-259-9847
MFG
THALES OPTRONICS LIMITED
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM ON-STATE CURRENT, DC
OVERALL DIAMETER: 0.120 INCHES MINIMUM AND 0.127 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.255 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 33.3 MINIMUM BREAKDOWN VOLTAGE, DC AND 36.8 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
0N219607
TRANSISTOR
NSN, MFG P/N
5961012600359
NSN
5961-01-260-0359
MFG
NATIONAL SECURITY AGENCY
Description
TRANSISTOR
