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5961-01-245-3707
20 Products
717801300-001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012453707
NSN
5961-01-245-3707
717801300-001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012453707
NSN
5961-01-245-3707
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.310 INCHES NOMINAL
OVERALL LENGTH: 1.500 INCHES NOMINAL
OVERALL WIDTH: 0.870 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
JANTX2N5686
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961012453198
NSN
5961-01-245-3198
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
SEMICONDUCTOR DEVICE SET
Related Searches:
35-700-13
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012453284
NSN
5961-01-245-3284
MFG
DRS POWER & CONTROL TECHNOLOGIES INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5658A
SPECIAL FEATURES: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
Related Searches:
JAN1N5658A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012453284
NSN
5961-01-245-3284
JAN1N5658A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012453284
NSN
5961-01-245-3284
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5658A
SPECIAL FEATURES: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
Related Searches:
1303-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012453427
NSN
5961-01-245-3427
MFG
MINCO TECHNOLOGY LABS INC .
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
717801303-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012453427
NSN
5961-01-245-3427
717801303-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012453427
NSN
5961-01-245-3427
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
JANTXV1N5712
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012453427
NSN
5961-01-245-3427
JANTXV1N5712
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012453427
NSN
5961-01-245-3427
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
H980044-001B
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012453433
NSN
5961-01-245-3433
H980044-001B
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012453433
NSN
5961-01-245-3433
MFG
RAYTHEON COMPANY
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 13.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 REVERSE VOLTAGE, INSTANTANEOUS
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.520 INCHES MAXIMUM
OVERALL LENGTH: 0.735 INCHES MINIMUM AND 0.765 INCHES MAXIMUM
OVERALL WIDTH: 0.735 INCHES MINIMUM AND 0.765 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 TURRET
Related Searches:
SA9573
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012453433
NSN
5961-01-245-3433
SA9573
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012453433
NSN
5961-01-245-3433
MFG
SEMTECH CORPORATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 13.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 REVERSE VOLTAGE, INSTANTANEOUS
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.520 INCHES MAXIMUM
OVERALL LENGTH: 0.735 INCHES MINIMUM AND 0.765 INCHES MAXIMUM
OVERALL WIDTH: 0.735 INCHES MINIMUM AND 0.765 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 TURRET
Related Searches:
SEN-B-475
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012453433
NSN
5961-01-245-3433
SEN-B-475
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012453433
NSN
5961-01-245-3433
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 13.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 REVERSE VOLTAGE, INSTANTANEOUS
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.520 INCHES MAXIMUM
OVERALL LENGTH: 0.735 INCHES MINIMUM AND 0.765 INCHES MAXIMUM
OVERALL WIDTH: 0.735 INCHES MINIMUM AND 0.765 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 TURRET
Related Searches:
DOM408BR
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012453546
NSN
5961-01-245-3546
MFG
FEI MICROWAVE INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N5518D
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012453668
NSN
5961-01-245-3668
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT AND 115.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5896 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.3 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
44-038313-01
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012453669
NSN
5961-01-245-3669
44-038313-01
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012453669
NSN
5961-01-245-3669
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: -1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-116
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.325 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 6.3 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 14 UNINSULATED WIRE LEAD
TRANSFER RATIO: 20.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
Related Searches:
7568204-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012453669
NSN
5961-01-245-3669
7568204-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012453669
NSN
5961-01-245-3669
MFG
GENERAL DYNAMICS LAND SYSTEMS INC . DBA WOODBRIDGE TECHNICAL CENTER DIV GENERAL DYNAMICS LAND SYSTEMS INC-WOODBRIDGE TECHNICAL CENTE
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: -1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-116
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.325 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 6.3 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 14 UNINSULATED WIRE LEAD
TRANSFER RATIO: 20.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
Related Searches:
839233-0012
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012453669
NSN
5961-01-245-3669
839233-0012
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012453669
NSN
5961-01-245-3669
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: -1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-116
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.325 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 6.3 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 14 UNINSULATED WIRE LEAD
TRANSFER RATIO: 20.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
Related Searches:
DH3467CD-883B
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012453669
NSN
5961-01-245-3669
DH3467CD-883B
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012453669
NSN
5961-01-245-3669
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: -1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-116
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.325 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 6.3 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 14 UNINSULATED WIRE LEAD
TRANSFER RATIO: 20.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
Related Searches:
FPQ3467
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012453669
NSN
5961-01-245-3669
FPQ3467
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012453669
NSN
5961-01-245-3669
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: -1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-116
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.325 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 6.3 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 14 UNINSULATED WIRE LEAD
TRANSFER RATIO: 20.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
Related Searches:
HS5058-1001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012453669
NSN
5961-01-245-3669
HS5058-1001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012453669
NSN
5961-01-245-3669
MFG
BOEING COMPANY THE DIV DEFENSE SPACE & SECURITY
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: -1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-116
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.325 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 6.3 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 14 UNINSULATED WIRE LEAD
TRANSFER RATIO: 20.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
Related Searches:
MHQ3467HXV
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012453669
NSN
5961-01-245-3669
MHQ3467HXV
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012453669
NSN
5961-01-245-3669
MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: -1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-116
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.325 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 6.3 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 14 UNINSULATED WIRE LEAD
TRANSFER RATIO: 20.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
Related Searches:
SA2738
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012453669
NSN
5961-01-245-3669
SA2738
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012453669
NSN
5961-01-245-3669
MFG
FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: -1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-116
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.325 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 6.3 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 14 UNINSULATED WIRE LEAD
TRANSFER RATIO: 20.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
