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5961-01-227-8393

20 Products

000-8004-162

TRANSISTOR

NSN, MFG P/N

5961012278393

NSN

5961-01-227-8393

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000-8004-162

TRANSISTOR

NSN, MFG P/N

5961012278393

NSN

5961-01-227-8393

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
III END ITEM IDENTIFICATION: 4920-01-111-2981//6130-01-241-6852//6625-01-196-8335
INCLOSURE MATERIAL: PLASTIC AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.160 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.570 INCHES MINIMUM AND 0.620 INCHES MAXIMUM
OVERALL WIDTH: 0.380 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 65.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MINIMUM COLLECTOR-TO-E

FBL-00-145

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012276312

NSN

5961-01-227-6312

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FBL-00-145

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012276312

NSN

5961-01-227-6312

MFG

VEECO INSTRUMENTS INC LAMBDA DIV

Description

CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MINIMUM REVERSE VOLTAGE, PEAK

108814-01

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961012276368

NSN

5961-01-227-6368

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108814-01

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961012276368

NSN

5961-01-227-6368

MFG

ROLM CORP MIL SPEC COMPUTERS

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A2 CENTER TAP 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.350 INCHES NOMINAL
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 0.350 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 PIN

B3-127

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961012276368

NSN

5961-01-227-6368

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B3-127

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961012276368

NSN

5961-01-227-6368

MFG

ABBOTT TECHNOLOGIES INC.

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A2 CENTER TAP 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.350 INCHES NOMINAL
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 0.350 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 PIN

SD241

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961012276368

NSN

5961-01-227-6368

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SD241

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961012276368

NSN

5961-01-227-6368

MFG

FREESCALE SEMICONDUCTOR INC.

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A2 CENTER TAP 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.350 INCHES NOMINAL
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 0.350 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 PIN

13081923

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961012276639

NSN

5961-01-227-6639

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13081923

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961012276639

NSN

5961-01-227-6639

MFG

PROGRAM MANAGER ADVANCED ATTACK HELICOPTER BARCOM AMCPM-AAH

13160381

TRANSISTOR

NSN, MFG P/N

5961012277595

NSN

5961-01-227-7595

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13160381

TRANSISTOR

NSN, MFG P/N

5961012277595

NSN

5961-01-227-7595

MFG

U S ARMY AVIATION AND MISSILE COMMAND

B2-132

TRANSISTOR

NSN, MFG P/N

5961012277596

NSN

5961-01-227-7596

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B2-132

TRANSISTOR

NSN, MFG P/N

5961012277596

NSN

5961-01-227-7596

MFG

ABBOTT TECHNOLOGIES INC.

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 1.550 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 1400.0 MAXIMUM COLLECTOR-TO-EMITTER SUBSTAINING VOLTAGE, WITH VOLTAGE BETWEEN BASE AND EMITTER AND 8.0 MAXIMUM EMITTER TO BASE VOLT

MJ8503

TRANSISTOR

NSN, MFG P/N

5961012277596

NSN

5961-01-227-7596

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MJ8503

TRANSISTOR

NSN, MFG P/N

5961012277596

NSN

5961-01-227-7596

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 1.550 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 1400.0 MAXIMUM COLLECTOR-TO-EMITTER SUBSTAINING VOLTAGE, WITH VOLTAGE BETWEEN BASE AND EMITTER AND 8.0 MAXIMUM EMITTER TO BASE VOLT

1D51217-1

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961012277677

NSN

5961-01-227-7677

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1D51217-1

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961012277677

NSN

5961-01-227-7677

MFG

MCDONNELL DOUGLAS CORP MCDONNELL DOUGLAS AEROSPACE DEFENSE AND ELECTRONICS SYSTEMS

Description

III END ITEM IDENTIFICATION: OH-58D AHIP (ARMY HELICOPTER IMPROVEMENT PROGRAM), ROTARY WING AIRCRAFT

1901-1111

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012277796

NSN

5961-01-227-7796

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1901-1111

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012277796

NSN

5961-01-227-7796

MFG

AGILENT TECHNOLOGIES INC. DIV AGILENT SOLUTION SUPPORT

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM REVERSE VOLTAGE, PEAK

UES1303

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012277796

NSN

5961-01-227-7796

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UES1303

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012277796

NSN

5961-01-227-7796

MFG

MICRO USPD INC

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM REVERSE VOLTAGE, PEAK

1901-1109

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012277797

NSN

5961-01-227-7797

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1901-1109

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012277797

NSN

5961-01-227-7797

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK

UES1306

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012277797

NSN

5961-01-227-7797

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UES1306

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012277797

NSN

5961-01-227-7797

MFG

MICRO USPD INC

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK

JANTXV1N5645A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012277798

NSN

5961-01-227-7798

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JANTXV1N5645A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012277798

NSN

5961-01-227-7798

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N5653A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/500
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/500 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIF

JANTXV1N4484

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012277799

NSN

5961-01-227-7799

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JANTXV1N4484

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012277799

NSN

5961-01-227-7799

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 4.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT AND 23.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N4484
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 62.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE

0448320002

TRANSISTOR

NSN, MFG P/N

5961012278045

NSN

5961-01-227-8045

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0448320002

TRANSISTOR

NSN, MFG P/N

5961012278045

NSN

5961-01-227-8045

MFG

SUNAIR ELECTRONICS LLC

Description

III END ITEM IDENTIFICATION: AN/URC-92
SEMICONDUCTOR MATERIAL: SILICON

544287

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961012278154

NSN

5961-01-227-8154

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544287

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961012278154

NSN

5961-01-227-8154

MFG

EASTMAN KODAK COMPANY DBA KODAK

Description

SPECIAL FEATURES: ITEM GOES ON PPIF,ROYALPRINT PROCESSOR,MODEL 417 (KODAK)

30300079

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961012278317

NSN

5961-01-227-8317

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30300079

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961012278317

NSN

5961-01-227-8317

MFG

WARD LEONARD ELECTRIC CO INC

386128

TRANSISTOR

NSN, MFG P/N

5961012278393

NSN

5961-01-227-8393

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386128

TRANSISTOR

NSN, MFG P/N

5961012278393

NSN

5961-01-227-8393

MFG

FLUKE CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
III END ITEM IDENTIFICATION: 4920-01-111-2981//6130-01-241-6852//6625-01-196-8335
INCLOSURE MATERIAL: PLASTIC AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.160 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.570 INCHES MINIMUM AND 0.620 INCHES MAXIMUM
OVERALL WIDTH: 0.380 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 65.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MINIMUM COLLECTOR-TO-E