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5961-01-225-5403
20 Products
FBL-00-171
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012255403
NSN
5961-01-225-5403
FBL-00-171
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012255403
NSN
5961-01-225-5403
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES NOMINAL AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
OVERALL DIAMETER: 0.265 INCHES NOMINAL
TERMINAL CIRCLE DIAMETER: 1.182 INCHES NOMINAL
TERMINAL LENGTH: 1.180 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 NOMINAL REVERSE VOLTAGE, PEAK
Related Searches:
1.5KE51A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012255404
NSN
5961-01-225-5404
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 21.40 AMPERES MAXIMUM PEAK PULSE CURRENT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.370 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1500.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 43.6 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
1N6288A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012255404
NSN
5961-01-225-5404
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 21.40 AMPERES MAXIMUM PEAK PULSE CURRENT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.370 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1500.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 43.6 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
99134986
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012255404
NSN
5961-01-225-5404
MFG
THALES
Description
CURRENT RATING PER CHARACTERISTIC: 21.40 AMPERES MAXIMUM PEAK PULSE CURRENT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.370 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1500.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 43.6 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
48-869491
TRANSISTOR SILC SSM
NSN, MFG P/N
5961012255549
NSN
5961-01-225-5549
MFG
MOTOROLA COMMUNICATIONS GROUP PARTS DEPT DIV OF MOTOROLA INC
Description
TRANSISTOR SILC SSM
Related Searches:
194B5395P2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012255682
NSN
5961-01-225-5682
194B5395P2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012255682
NSN
5961-01-225-5682
MFG
GENERAL ELECTRIC CO DIRECT CURRENT MOTOR AND GENERATOR DEPT
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
2003174014
TRANSISTOR
NSN, MFG P/N
5961012256725
NSN
5961-01-225-6725
MFG
VIDEOTEK INC.
Description
TRANSISTOR
Related Searches:
2003190604
TRANSISTOR
NSN, MFG P/N
5961012256726
NSN
5961-01-225-6726
MFG
VIDEOTEK INC.
Description
TRANSISTOR
Related Searches:
198854
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012256727
NSN
5961-01-225-6727
MFG
SHREDEX INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
14BB110
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012256728
NSN
5961-01-225-6728
MFG
SOLITRON DEVICES INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
G101025-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012256728
NSN
5961-01-225-6728
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SPN4003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012256728
NSN
5961-01-225-6728
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
G109493-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012256729
NSN
5961-01-225-6729
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
MG1160
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012256729
NSN
5961-01-225-6729
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
G226061-1
TRANSISTOR
NSN, MFG P/N
5961012258660
NSN
5961-01-225-8660
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
TRANSISTOR
Related Searches:
1A8191-1
TRANSISTOR
NSN, MFG P/N
5961012258661
NSN
5961-01-225-8661
MFG
GE AVIATIONS SYSTEMS LLC DBA GE AVIATION DIV ELECTRICAL POWER-POMPANO
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 10.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 6.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 850.0 MAXIMUM C
Related Searches:
5001-771
TRANSISTOR
NSN, MFG P/N
5961012258661
NSN
5961-01-225-8661
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 10.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 6.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 850.0 MAXIMUM C
Related Searches:
MIS-19836/47
TRANSISTOR
NSN, MFG P/N
5961012258662
NSN
5961-01-225-8662
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
TRANSISTOR
Related Searches:
14-19-723
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012258666
NSN
5961-01-225-8666
MFG
NI INDUSTRIES INC THERMADOR DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
100038-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012258667
NSN
5961-01-225-8667
MFG
MARATHONNORCO AEROSPACE INC. DBA MARATHON BATTERY
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, PEAK
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.128 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
