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5961-01-199-4280
20 Products
2710038
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011994280
NSN
5961-01-199-4280
MFG
EIP MICROWAVE INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1902-0961
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011992832
NSN
5961-01-199-2832
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES NOMINAL
OVERALL LENGTH: 0.200 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.0 MAXIMUM BREAKDOWN VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
SZ30035-19
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011992832
NSN
5961-01-199-2832
SZ30035-19
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011992832
NSN
5961-01-199-2832
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES NOMINAL
OVERALL LENGTH: 0.200 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.0 MAXIMUM BREAKDOWN VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
1N5372A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011992833
NSN
5961-01-199-2833
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 62.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
Related Searches:
400070-39-2
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011993320
NSN
5961-01-199-3320
400070-39-2
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011993320
NSN
5961-01-199-3320
MFG
SERVO CORPORATION OF AMERICA
Description
III END ITEM IDENTIFICATION: AUTOMATED RADIOTHEODOLITE SYSTEM (ART-1, 1R, 2, 2R)
Related Searches:
7570215-54
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011993620
NSN
5961-01-199-3620
7570215-54
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011993620
NSN
5961-01-199-3620
MFG
AMPEX SYSTEMS CORP
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
7576016-01
TRANSISTOR
NSN, MFG P/N
5961011993675
NSN
5961-01-199-3675
MFG
AMPEX SYSTEMS CORP
Description
TRANSISTOR
Related Searches:
7576015-04
TRANSISTOR
NSN, MFG P/N
5961011993676
NSN
5961-01-199-3676
MFG
AMPEX SYSTEMS CORP
Description
TRANSISTOR
Related Searches:
2N5401-5
TRANSISTOR
NSN, MFG P/N
5961011993845
NSN
5961-01-199-3845
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 310.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
Related Searches:
580-877
TRANSISTOR
NSN, MFG P/N
5961011993845
NSN
5961-01-199-3845
MFG
AMPEX SYSTEMS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 310.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
Related Searches:
MS8511
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011993846
NSN
5961-01-199-3846
MFG
SOLITRON DEVICES INC.
Description
CAPACITANCE RATING IN PICOFARADS: 1.0 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MINIMUM FORWARD CURRENT, DC AND 0.30 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.076 INCHES NOMINAL
OVERALL LENGTH: 0.180 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS AND 0.4 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
SJ7315
TRANSISTOR
NSN, MFG P/N
5961011994272
NSN
5961-01-199-4272
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
Related Searches:
1410101-00
TRANSISTOR
NSN, MFG P/N
5961011994273
NSN
5961-01-199-4273
MFG
EIP MICROWAVE INC
Description
III END ITEM IDENTIFICATION: C-5 AIRCRAFT; VIRGINIA CLASS CGN (41); SPRUANCE CLASS DD (963); OLIVER PERRY CLASS FFG; FORRESTAL CLASS CV; STURGEON CLASS SSN (637); LOS ANGELES CLASS SSN (688); TICONDEROGA CLASS CG (47); NIMITZ CLASS CVN; AUSTIN SHIP CLASS LPD-4 AMPIHIBIOUS TRANSPORT
~1: DOCKS; KISS CLASS DDG
Related Searches:
NE02137
TRANSISTOR
NSN, MFG P/N
5961011994273
NSN
5961-01-199-4273
MFG
CALIFORNIA EASTERN LABS
Description
III END ITEM IDENTIFICATION: C-5 AIRCRAFT; VIRGINIA CLASS CGN (41); SPRUANCE CLASS DD (963); OLIVER PERRY CLASS FFG; FORRESTAL CLASS CV; STURGEON CLASS SSN (637); LOS ANGELES CLASS SSN (688); TICONDEROGA CLASS CG (47); NIMITZ CLASS CVN; AUSTIN SHIP CLASS LPD-4 AMPIHIBIOUS TRANSPORT
~1: DOCKS; KISS CLASS DDG
Related Searches:
4710029
TRANSISTOR
NSN, MFG P/N
5961011994274
NSN
5961-01-199-4274
MFG
EIP MICROWAVE INC
Description
CURRENT RATING PER CHARACTERISTIC: 750.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 4.600 INCHES MAXIMUM
OVERALL LENGTH: 14.000 INCHES MAXIMUM
OVERALL WIDTH: 7.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 38.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
4710026-02
TRANSISTOR
NSN, MFG P/N
5961011994276
NSN
5961-01-199-4276
MFG
EIP MICROWAVE INC
Description
TRANSISTOR
Related Searches:
4710030-02
TRANSISTOR
NSN, MFG P/N
5961011994277
NSN
5961-01-199-4277
MFG
EIP MICROWAVE INC
Description
TRANSISTOR
Related Searches:
296169
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011994278
NSN
5961-01-199-4278
MFG
PRECISION SCIENTIFIC PETROLEUM INSTRUMENTS CO
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
H21A1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011994278
NSN
5961-01-199-4278
MFG
INTERSIL CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
ND4991
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011994279
NSN
5961-01-199-4279
MFG
EIP MICROWAVE INC
Description
SEMICONDUCTOR DEVICE,DIODE
